Zobrazeno 1 - 10
of 388
pro vyhledávání: '"Double Pulse test"'
Publikováno v:
IEEE Access, Vol 12, Pp 7540-7550 (2024)
Currently, wide bandgap (WBG) power semiconductor devices such as low-resistance SiC MOSFETs and GaN HEMTs are being utilized extensively to achieve high efficiency. However, securing a sufficient margin voltage between the drain–source sensing vol
Externí odkaz:
https://doaj.org/article/5ef7d0c3da7e402393b7ba4cb6c12e2d
Autor:
Abdelrahman Elwakeel, Neville Mcneill, Rafael Pena Alzola, Ravi Kiran Surapaneni, Gowtham Galla, Ludovic Ybanez, Min Zhang, Weijia Yuan
Publikováno v:
IEEE Access, Vol 11, Pp 73490-73504 (2023)
Cryogenic propulsion with hydrogen fuel cells replacing fossil fuels is a promising solution to cut carbon emissions in the aviation sector. Hydrogen will also be used for cooling the superconducting machines and power converter circuits. This articl
Externí odkaz:
https://doaj.org/article/85ea2f7db0fd48c99e5d9a0731f1ebd7
Akademický článek
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Autor:
Yan-Kun Xia, Xin-Yang Li
Publikováno v:
IEEE Access, Vol 10, Pp 58769-58776 (2022)
In high-frequency electronic equipment and power electronic devices, the dynamic performance of switching devices is one of the important indicators, and a double-pulse test circuit is usually used to test the dynamic performance of switching devices
Externí odkaz:
https://doaj.org/article/f4824d119f7d4b23916652f305236e41
Autor:
Wei Guo, Guangzhong Jian, Weibing Hao, Feihong Wu, Kai Zhou, Jiahong Du, Xuanze Zhou, Qiming He, Zhaoan Yu, Xiaolong Zhao, Guangwei Xu, Shibing Long
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 10, Pp 933-941 (2022)
β-Ga2O3 Schottky barrier diodes with field plate (FP-SBDs) are fabricated and their SPICEcompatible model are constructed for double-pulse test circuit and DC-DC boost converter simulations. The reverse recovery time ( $t_{{\mathrm {rr}}}$ ) of the
Externí odkaz:
https://doaj.org/article/ee1a96291d7e4275ac7a069a7d04e499
Publikováno v:
IEEE Open Journal of Power Electronics, Vol 3, Pp 587-598 (2022)
This paper investigates the effect of voltage sensors on the measurement of transient voltages for power semiconductors in a Double Pulse Test (DPT) environment. We adapt previously published models that were developed for current sensors and apply t
Externí odkaz:
https://doaj.org/article/2640e87f01724213a64ea1ae05ef2ae4
Autor:
Salah S. Alharbi, Mohammad Matin
Publikováno v:
CES Transactions on Electrical Machines and Systems, Vol 5, Iss 3, Pp 232-248 (2021)
Wide bandgap (WBG) semiconductors, such as silicon carbide (SiC) and gallium nitride (GaN), exhibit superior physical properties and demonstrate great potential for replacing conventional silicon (Si) semiconductors with WBG technology, pushing the b
Externí odkaz:
https://doaj.org/article/986c4c2691114fbe85754ce7b78d704c
Publikováno v:
IEEE Open Journal of Power Electronics, Vol 2, Pp 570-581 (2021)
This paper investigates the impact of current sensors on the measurement of transient currents in fast-switching power semiconductors in a double pulse test (DPT) environment. We review previous research that assesses the influence of current sensors
Externí odkaz:
https://doaj.org/article/3297f36f48bd460d9d214b95aa5b89bf
Publikováno v:
IEEE Open Journal of Power Electronics, Vol 1, Pp 431-444 (2020)
A switching characterization (SC) test of power semiconductor devices (PSDs) gives us significant insight into the dynamic switching behavior of the device under various operating conditions. A double pulse test (DPT) is a widely used method for eval
Externí odkaz:
https://doaj.org/article/b008772720734fa5915a028bdd874757
Publikováno v:
IEEE Access, Vol 8, Pp 20749-20758 (2020)
High frequency converters based on silicon carbide (SiC) semiconductors are becoming popular, but due to the integration parameters, they are very likely to generate high voltage overshoot and large oscillation, which increase the voltage stress and
Externí odkaz:
https://doaj.org/article/106e1f04dc774cfeae2d3be825865a47