Zobrazeno 1 - 10
of 1 706
pro vyhledávání: '"Dot pitch"'
Autor:
Giovanni Ghione, Francesco Bertazzi, H. Figgemeier, Marco Vallone, Stefan Hanna, Alberto Tibaldi, Michele Goano, Anne Wegmann, D. Eich
Publikováno v:
IEEE Journal of Selected Topics in Quantum Electronics. 28:1-9
This work investigates the spectral quantum efficiency and inter-pixel crosstalk of a MWIR-LWIR dual band, HgCdTe-based focal plane array (FPA) photodetector (MWIR and LWIR stand for mid- and long-wavelength infrared bands). Pixels are $\text{10}\,\m
Publikováno v:
IEEE Journal of Emerging and Selected Topics in Power Electronics. 10:984-996
In this paper, an unequal printed structure is proposed to obtain high quality factor (Q-factor) coil antenna in wireless power transmission system. In the resonance method wireless power transmission, the quality factor is one of the important facto
Publikováno v:
SMPTE Motion Imaging Journal. 130:60-70
In this article, we define the technical requirements for a light field display to provide effective depth cues such as binocular disparity, motion parallax, and accommodation at a pixel resolution expected by the eye. These requirements are evaluate
Autor:
Chrong Jung Lin, Wei-Hwa Lin, Chien-Ping Wang, Burn Jeng Lin, Yue-Der Chih, Jonathan Chang, Ya-Chin King, Jiaw-Ren Shih
Publikováno v:
IEEE Transactions on Electron Devices. 68:4972-4976
An in-tool, on-wafer detectors’ array for monitoring deep ultraviolet (DUV) light is proposed and demonstrated in this work. The proposed electronic layer detectors array (ELDA) features FinFET CMOS compatibility and compact pixel structure. Its mi
Autor:
Youngcheol Chae, Chanmin Park, Myung-Jae Lee, Injun Park, Yoondeok Na, Byungchoul Park, Woojun Choi
Publikováno v:
IEEE Journal of Solid-State Circuits. 56:2956-2967
This article presents a 64 $\times $ 64 indirect time-of-flight (iToF) image sensor with a depth range of 50 m, integrated into a 1P4M 110-nm CMOS process. The sensor is based on a single-photon avalanche diode (SPAD), the range-dependent phase delay
Autor:
Miao Xu, Ruan Chongpeng, Zhou Lei, Jianhua Zou, Wei-Jing Wu, Yan-Gang Xu, Lei Wang, Junbiao Peng
Publikováno v:
IEEE Sensors Journal. 21:20824-20832
This paper proposes an organic photodiode (OPD) image sensor based on indium zinc oxide (IZO) thin-film transistors (TFTs). The sensor array has a $256\times256$ pixel format with a $50~\mu \text{m}$ pixel size. The continuous OPD fabricated by the s
Autor:
Yunlong Li, Epimitheas Georgitzikis, Paul Heremans, Pawel E. Malinowski, David Cheyns, Jiwon Lee, Joo Hyoung Kim, Itai Lieberman, Vladimir Pejovic
Publikováno v:
IEEE Electron Device Letters. 42:1196-1199
In this letter, we present a small pixel pitch image sensor optimized for high external quantum efficiency in short-wavelength infrared (SWIR). Thin-film photodiodes based on PbS colloidal quantum dot (CQD) absorber allow us to exceed the spectral li
Publikováno v:
IEEE Photonics Technology Letters. 33:603-606
A monolithic thin film red light emitting diode (LED) active-matrix (AM) micro-display driven by a complementary metal-oxide semiconductor (CMOS) driver is demonstrated. The resolution of the micro-display is $64\times36$ , with a $40\,\,\mu \text{m}
Autor:
Ning Liu, Chia-Yu Peng, Eagle Lin, Curry Lin, Leo Chang, Puru Bruce Lin, Tim Xia, Tzvy-Jang Tseng, John H. Lau, Kai-Ming Yang, Tzu Nien Lee, Show May Chiu, Cheng-Ta Ko
Publikováno v:
IEEE Transactions on Components, Packaging and Manufacturing Technology. 11:739-747
In this study, the feasibility of mini-light-emitting diode (LED) RGB display fabricated by a chip-first fan-out panel-level packaging is investigated. Emphasis is placed on the design, materials, process, fabrication, and reliability of the mini-LED
Autor:
Rihito Kuroda, Yasuyuki Fujihara, Manabu Suzuki, Ryota Kobayashi, Taku Shibaguchi, Naoya Kuriyama, Yoshihisa Harada, Takaki Hatsui, Takeo Watanabe, Harada Tetsuo, Shigetoshi Sugawa, Maasa Murata, Shoma Harada, Hiroya Shike, Jun Miyawaki, Yuichi Yamasaki
Publikováno v:
IEEE Transactions on Electron Devices. 68:2056-2063
This article presents a prototype $22.4~\mu \text{m}$ pixel pitch global shutter (GS) wide dynamic range (WDR) soft X-ray CMOS image sensor (sxCMOS). Backside-illuminated (BSI) pinned photodiodes with a 45- $\mu \text{m}$ thick Si substrate were intr