Correction to Improved Contacts to MoS 2 Transistors by Ultra-High Vacuum Metal Deposition.

Autor: English CD, Shine G, Dorgan VE, Saraswat KC, Pop E

Publikováno v: Nano letters [Nano Lett] 2017 Apr 12; Vol. 17 (4), pp. 2739. Date of Electronic Publication: 2017 Apr 03.

Role of Remote Interfacial Phonon (RIP) Scattering in Heat Transport Across Graphene/SiO 2 Interfaces.

Autor: Koh YK; Department of Mechanical Engineering, and Centre for Advanced 2D Materials, National University of Singapore , Singapore 119077., Lyons AS; Department of Electrical and Computer Engineering, Micro and Nanotechnology Lab, University of Illinois , Urbana, Illinois 61801, United States., Bae MH; Department of Electrical and Computer Engineering, Micro and Nanotechnology Lab, University of Illinois , Urbana, Illinois 61801, United States.; Korea Research Institute of Standards and Science , Daejeon 305-340, Republic of Korea., Huang B; Department of Mechanical Engineering, and Centre for Advanced 2D Materials, National University of Singapore , Singapore 119077., Dorgan VE; Department of Electrical and Computer Engineering, Micro and Nanotechnology Lab, University of Illinois , Urbana, Illinois 61801, United States., Cahill DG; Department of Materials Science and Engineering, and Frederick Seitz Materials Research Laboratory, University of Illinois , Urbana, Illinois 61801, United States., Pop E; Department of Electrical and Computer Engineering, Micro and Nanotechnology Lab, University of Illinois , Urbana, Illinois 61801, United States.; Department of Electrical Engineering and Precourt Institute for Energy, Stanford University , Stanford, California 94305, United States.

Publikováno v: Nano letters [Nano Lett] 2016 Oct 12; Vol. 16 (10), pp. 6014-6020. Date of Electronic Publication: 2016 Sep 08.

Bright visible light emission from graphene.

Autor: Kim YD; 1] Department of Physics and Astronomy, Seoul National University, Seoul 151-747, Republic of Korea [2] Department of Mechanical Engineering, Columbia University, New York, New York 10027, USA., Kim H; School of Physics, Konkuk University, Seoul 143-701, Republic of Korea., Cho Y; Department of Physics, Sogang University, Seoul 121-742, Republic of Korea., Ryoo JH; Department of Physics and Astronomy, Seoul National University, Seoul 151-747, Republic of Korea., Park CH; Department of Physics and Astronomy, Seoul National University, Seoul 151-747, Republic of Korea., Kim P; Department of Physics and Astronomy, Seoul National University, Seoul 151-747, Republic of Korea., Kim YS; Department of Physics and Graphene Research Institute, Sejong University, Seoul 143-747, Republic of Korea., Lee S; Department of Electrical Engineering, Columbia University, New York, New York 10027, USA., Li Y; 1] Department of Electrical Engineering, Columbia University, New York, New York 10027, USA [2] Department of Physics, Columbia University, New York, New York 10027, USA., Park SN; Korea Research Institute of Standards and Science, Daejeon 305-340, Republic of Korea., Yoo YS; Korea Research Institute of Standards and Science, Daejeon 305-340, Republic of Korea., Yoon D; Department of Physics, Sogang University, Seoul 121-742, Republic of Korea., Dorgan VE; Micro and Nanotechnology Lab and Department of Electrical and Computer Engineering, University of Illinois at Urbana-Champaign, Urbana, Illinois 61801, USA., Pop E; Department of Electrical Engineering, Stanford University, Stanford, California 94305, USA., Heinz TF; 1] Department of Electrical Engineering, Columbia University, New York, New York 10027, USA [2] Department of Physics, Columbia University, New York, New York 10027, USA., Hone J; Department of Mechanical Engineering, Columbia University, New York, New York 10027, USA., Chun SH; Department of Physics and Graphene Research Institute, Sejong University, Seoul 143-747, Republic of Korea., Cheong H; Department of Physics, Sogang University, Seoul 121-742, Republic of Korea., Lee SW; School of Physics, Konkuk University, Seoul 143-701, Republic of Korea., Bae MH; 1] Korea Research Institute of Standards and Science, Daejeon 305-340, Republic of Korea [2] Department of Nano Science, University of Science and Technology, Daejeon 305-350, Republic of Korea., Park YD; 1] Department of Physics and Astronomy, Seoul National University, Seoul 151-747, Republic of Korea [2] Center for Subwavelength Optics, Seoul National University, Seoul 151-747, Republic of Korea.

Publikováno v: Nature nanotechnology [Nat Nanotechnol] 2015 Aug; Vol. 10 (8), pp. 676-81. Date of Electronic Publication: 2015 Jun 15.

High-field electrical and thermal transport in suspended graphene.

Autor: Dorgan VE; Micro and Nanotechnology Lab and ‡Department of Electrical and Computer Engineering, University of Illinois at Urbana-Champaign , Illinois 61801, United States., Behnam A, Conley HJ, Bolotin KI, Pop E

Publikováno v: Nano letters [Nano Lett] 2013 Oct 09; Vol. 13 (10), pp. 4581-6. Date of Electronic Publication: 2013 Feb 20.

Scaling of high-field transport and localized heating in graphene transistors.

Autor: Bae MH; Micro & Nanotechnology Lab, University of Illinois, Urbana-Champaign, Illinois 61801, United States., Islam S, Dorgan VE, Pop E

Publikováno v: ACS nano [ACS Nano] 2011 Oct 25; Vol. 5 (10), pp. 7936-44. Date of Electronic Publication: 2011 Sep 13.