Zobrazeno 1 - 3
of 3
pro vyhledávání: '"Dora Szalkai"'
Autor:
Laurent Ottaviani, Vanessa Vervisch, L. Vermeeren, Andrej Yu. Kuznetsov, Mihai Lazar, F. Issa, Anders Hallén, Olivier Palais, Dora Szalkai, Abdallah Lioussy, A. Klix
Publikováno v:
Materials Science Forum. :1046-1049
Silicon carbide (SiC) radiation detectors were realized by 10B implantation into the metal contact in order to avoid implantation-related defects within the sensitive area of the 4H-SiC pn junction. No post implantation annealing was performed. Such
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::98940162d8384ececbefedcbd0272250
https://doi.org/10.4028/www.scientific.net/msf.778-780.1046
https://doi.org/10.4028/www.scientific.net/msf.778-780.1046
Autor:
A. Lyoussi, Vanessa Vervisch, F. Issa, Mihai Lazar, Anders Hallén, Andrej Yu. Kuznetsov, A. Klix, R. Ferone, Laurent Ottaviani, Olivier Palais, Dora Szalkai, L. Vermeeren
Publikováno v:
Materials Science Forum
Materials Science Forum, 2015, 821-823, pp.875-878. ⟨10.4028/www.scientific.net/MSF.821-823.875⟩
Materials Science Forum, Trans Tech Publications Inc., 2015, 821-823, pp.875-878. ⟨10.4028/www.scientific.net/MSF.821-823.875⟩
Materials Science Forum, 2015, 821-823, pp.875-878. ⟨10.4028/www.scientific.net/MSF.821-823.875⟩
Materials Science Forum, Trans Tech Publications Inc., 2015, 821-823, pp.875-878. ⟨10.4028/www.scientific.net/MSF.821-823.875⟩
Two types of 4H-SiC semiconductor detectors (D1 and D2) are realized based on ion implantation of 10B inside the aluminum metallic contact. The first detector shows a high leakage current after 10B implantation and low signal to noise ratio. However,
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::64c057b0bb64c4f0caa68e4956d3c3b9
https://hal.science/hal-01391850
https://hal.science/hal-01391850
Autor:
Andrej Yu. Kuznetsov, Vanessa Vervisch, F. Issa, M. Lazar, Anders Hallén, Abdallah Lyoussi, A. Klix, Stephane Biondo, Wilfried Vervisch, L. Vermeeren, Laurent Ottaviani, Dora Szalkai
Publikováno v:
MRS Proceedings. 1693
The purpose of this paper is to propose the enhancement of device detectors based on p-n junction in 4H-SiC for nuclear instrumentation. Particular emphasis is placed on the interest on using Boron isotope 10 as a Neutron Converter Layer in order to
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::63ee8b12e1eea3a5cf82547dfbb46d10
https://doi.org/10.1557/opl.2014.691
https://doi.org/10.1557/opl.2014.691