Výsledky vyhledávání - "Dopagem de semicondutores"

Nanofios de óxido de zinco e nanofitas de grafeno: fabricação, estrutura e propriedades de transporte opto-eletrônico

Publikováno v: Repositório Institucional da UFMG
Universidade Federal de Minas Gerais (UFMG)
instacron:UFMG

Nessa tese, estudamos a fabricação e propriedades de transporte elétrico em nanoestruturas como nanofios de ZnO e grafeno. Em nanofios de ZnO, elaboramos um trabalho sobre o mecanismo de crescimento em baixas temperaturas, onde a fabricação de n

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Magnetism in dilute magnetic oxide thin films based on SnO/sub 2

Autor: Fitzgerald, C.B., Venkatesan, M., Dorneles, Lucio Strazzabosco, Gunning, R., Stamenov, Plamen, Coey, John Michael Douglas, Stampe, P.A., Kennedy, R.J., Moreira, Eduardo Ceretta, Sias, Uilson Schwantz

Publikováno v: Repositório Institucional da UFRGS
Universidade Federal do Rio Grande do Sul (UFRGS)
instacron:UFRGS

Thin films of SnO2 prepared by pulsed-laser deposition on R-cut sapphire substrates exhibit ferromagnetic properties at room temperature when they are doped with Cr, Mn, Fe, Co, or Ni, but not with other 3d cations. Extrapolated Curie temperatures ar

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=od______3056::7d6bdf2a008121b7a90910af86809e46

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Electrical isolation in GaAs by light ion irradiation: The role of antisite defects

Autor: Henri Ivanov Boudinov, J. P. de Souza, I. Danilov

Publikováno v: Repositório Institucional da UFRGS
Universidade Federal do Rio Grande do Sul (UFRGS)
instacron:UFRGS

The evolution of the sheet resistance (Rs) in n-type GaAs layers during ion irradiation was studied using light mass projectiles like proton, deuterium, and helium ions at various energies. For all the cases, at the beginning of the irradiation, Rs i

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::58d375bd3afaadaf553f3024f0748733
https://doi.org/10.1063/1.116391

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Electrical resistivity of acceptor carbon in GaAs

Autor: Clas Persson, Yoko Suzuki, J. P. de Souza, Yuqing Yang, Rajeev Ahuja, Iuri Muniz Pepe, Bo E. Sernelius, A. Ferreira da Silva

Publikováno v: Repositório Institucional da UFRGS
Universidade Federal do Rio Grande do Sul (UFRGS)
instacron:UFRGS

The electrical resistivity was investigated from room temperature down to 1.7 K for the shallow acceptor carbon in GaAs prepared by ion implantation with impurity concentrations between 1017 and 1019 cm-³. Good agreement was obtained between the mea

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Mechanical strain and damage in Si implanted with O and N ions at elevated temperatures : evidence of ion beam induced annealing

Autor: Souza, Joel Pereira de, Suprun-Belevich, Yu., Boudinov, Henri Ivanov, Cima, Carlos Alberto

Publikováno v: Repositório Institucional da UFRGS
Universidade Federal do Rio Grande do Sul (UFRGS)
instacron:UFRGS

The accumulation of damage and the development of mechanical strain in crystalline Si (c-Si) by O and N ion implantation to doses up to 431017 cm-² at elevated temperatures have been studied using Rutherford backscattering spectrometry and high reso

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Comparison of nitrogen incorporation in SiO/sub 2//SiC and SiO/sub 2/Si structures

Autor: McDonald, K., Huang, M.B., Weller, R.A., Feldman, L.C., Williams, J.R., Stedile, Fernanda Chiarello, Baumvol, Israel Jacob Rabin, Radtke, Claudio

Publikováno v: Repositório Institucional da UFRGS
Universidade Federal do Rio Grande do Sul (UFRGS)
instacron:UFRGS

The nitrogen content of SiO2/SiC (4H) structures annealed in NO and N2O has been measured using nuclear reaction analysis. Samples were annealed in 15N18O or 15N2O at 1000 °C at a static pressure of 10 mbar for either 1 or 4 h. Annealing in N2O inco

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Impurity resistivity of the double-donor system Si:P,Bi

Autor: Silva, Antonio Ferreira da, Sernelius, Bo E., Souza, Joel Pereira de, Boudinov, Henri Ivanov, Zheng, Hairong, Sarachik, M.P.

Publikováno v: Repositório Institucional da UFRGS
Universidade Federal do Rio Grande do Sul (UFRGS)
instacron:UFRGS

The electrical resistivity of the shallow double-donor system Si:P,Bi, prepared by ion implantation, was investigated in the temperature range from 1.7 to 300 K. Good agreement was obtained between the measured resistivities and resistivities calcula

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Electrical isolation of a silicon [Delta]-doped layer in GaAs by ion irradiation

Autor: Danilov, Iuri, Souza, Joel Pereira de, Boudinov, Henri Ivanov, Murel, A.V., Shashkin, V.I.

Publikováno v: Repositório Institucional da UFRGS
Universidade Federal do Rio Grande do Sul (UFRGS)
instacron:UFRGS

The electrical isolation of a n-type d -doped layer embedded into undoped GaAs was studied using proton or helium ion bombardment. The threshold dose for isolation Dth of the d -doped layer was found to be '2 times higher than that predicted for thic

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Electrical isolation of n-type GaAs layers by proton bombardment : effects of the irration temperature

Autor: Souza, Joel Pereira de, Danilov, Iuri, Boudinov, Henri Ivanov

Publikováno v: Repositório Institucional da UFRGS
Universidade Federal do Rio Grande do Sul (UFRGS)
instacron:UFRGS

The electrical isolation in n-type GaAs layers produced by proton irradiation at temperatures from 2100 to 300°C was investigated. The threshold dose for the isolation (Dth) was found almost identical for irradiation at temperatures from - 100 to 22

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Electrical resistivity of bismuth implanted into silicon

Autor: Silva, Antonio Ferreira da, Sernelius, Bo E., Souza, Joel Pereira de, Boudinov, Henri Ivanov

Publikováno v: Repositório Institucional da UFRGS
Universidade Federal do Rio Grande do Sul (UFRGS)
instacron:UFRGS

We investigate the electrical properties of Bi-doped Si samples, prepared by ion implantation, in a range of concentrations around and above the metal–nonmetal transition. Comparison between experimental and theoretical values of the resistivity br

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