Zobrazeno 1 - 10
of 35
pro vyhledávání: '"Dooyoung Yang"'
Publikováno v:
Energies, Vol 10, Iss 2, p 167 (2017)
This paper presents a new adaptive torque estimation algorithm for an interior permanent magnet synchronous motor (IPMSM) with parameter variations and cross-coupling between d- and q-axis dynamics. All cross-coupled, time-varying, or uncertain terms
Externí odkaz:
https://doaj.org/article/2198af6e1edb4e3e9ecb85bb13e82c15
Publikováno v:
Solid-State Electronics. 39:1501-1506
In this paper we detail the consequences of hot-carrier effects on the performance of a 64 Mb DRAM, by investigating the performance degradation of each constituent circuit on the overall performance of the part. This contrasts to the more traditiona
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8a47dcbcea6050de8387ac7c6fa2b60d
https://doi.org/10.1016/0038-1101(96)00062-7
https://doi.org/10.1016/0038-1101(96)00062-7
Publikováno v:
IEEE Electron Device Letters. 21:563-565
This letter describes a unique process for the preparation of high quality tantalum oxynitride (TaO/sub x/N/sub y/) via the ND/sub 3/ annealing of Ta/sub 2/O/sub 5/, for use in gate dielectric applications. Compared with tantalum oxide (Ta/sub 2/O/su
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::46523779a26625193250737cd1c95c1b
https://doi.org/10.1109/55.887466
https://doi.org/10.1109/55.887466
Publikováno v:
Proceedings of 1st International Symposium on Plasma Process-Induced Damage.
In this paper, we have evaluated the effect of n/sup +/-As S/D implantation on the performance of MOS capacitor and transistor. The BVdss values of n- MOSFETs, implanted with the higher dose(=5xI0/sup 15/) and energy(=40KeV) ions of As, were observed
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::357bdda91dae0893e040d8f204e08537
https://doi.org/10.1109/ppid.1996.715240
https://doi.org/10.1109/ppid.1996.715240
Autor:
Woo-Sik Kim, Dooyoung Yang, Kang-Sik Youn, Yun-Jun Huh, Hyunsang Hwang, Jae-Gyung Ahn, Jae Jeong Kim, Jin Won Park, Jae-Hee Ha
Publikováno v:
Proceedings of International Electron Devices Meeting.
Extensive reliability and performance characteristics of ultrashort channel CMOS devices with various process conditions for giga-bit DRAM were investigated. Using conventional process with various oxide thicknesses and doping profiles, we fabricated
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::965890a2479b5b7578b8eb194c955835
https://doi.org/10.1109/iedm.1995.499232
https://doi.org/10.1109/iedm.1995.499232
Publikováno v:
Proceedings of International Electron Devices Meeting.
In this paper we detail the consequences of hot-carrier effects on gate capacitance variation and it's impact on the design margin of each constituent circuit of a 64 Mb DRAM. The degradation mechanism, which produces the capacitance imbalance in spe
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6e58029c5dfc9af4ade4793aa4ced187
https://doi.org/10.1109/iedm.1995.497176
https://doi.org/10.1109/iedm.1995.497176
Autor:
Juho Song, Geun-Jo Han, Cheol Hoon Yang, Cheol Seong Hwang, Dooyoung Yang, Kiyoung Oh, Dong-Hyun Kim, Young-Ki Han, Jaehoo Park
Publikováno v:
MRS Proceedings. 672
The cocktail source of BST was prepared by mixing of Ba, Sr, and Ti precursor solution with specific mole ratio. This cocktail source was vaporized and delivered into the warm wall reactor by liquid delivery system(LDS) and gaseous source was distrib
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::731dd16422e80fecc30471fda68bb726
https://doi.org/10.1557/proc-671-o9.2
https://doi.org/10.1557/proc-671-o9.2
Publikováno v:
MRS Proceedings. 611
In this paper, we report a process for the preparation of high quality amorphous tantalum oxynitride (TaOxNy) via ammonia annealing of Ta2O5 followed by wet reoxidation for use in gate dielectric applications. Compared with tantalum oxide(Ta2O5), a s
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0975a9030d8242b43dcaab2b68192c8e
https://doi.org/10.1557/proc-611-c1.8.1
https://doi.org/10.1557/proc-611-c1.8.1
Publikováno v:
Extended Abstracts of the 2000 International Conference on Solid State Devices and Materials.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1302181559b8c72eaeb8d1058c55fc1f
https://doi.org/10.7567/ssdm.2000.b-5-6
https://doi.org/10.7567/ssdm.2000.b-5-6
Publikováno v:
33rd IEEE International Reliability Physics Symposium.
The hot-carrier effects on DRAM have been evaluated thoroughly by investigating the performance degradation of each constituent circuit as component transistor aging in a 64 Mb DRAM. The mechanism of how the overall circuit performance is affected by
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::d3eba7fbf4fcb4d7c3498e04b3b0e834
https://doi.org/10.1109/irps.1995.363339
https://doi.org/10.1109/irps.1995.363339