Zobrazeno 1 - 10
of 57
pro vyhledávání: '"Dooyong Lee"'
Autor:
Feng Ma, Sang-il Choi, Dooyong Lee, Sung Bae Jeon, Sungkyun Park, Sung-Pyo Cho, Jin-Hyo Boo, Sungsoo Kim
Publikováno v:
Nature Communications, Vol 15, Iss 1, Pp 1-13 (2024)
Abstract Poly(3,4-ethylenedioxythiophene):polystyrene sulfonate (PEDOT:PSS), a successfully commercialized polymeric semiconductor material, has potential as a transparent electrode in flexible electronic devices, yet has insufficient conductivity. W
Externí odkaz:
https://doaj.org/article/ae7d92829c2b4cb6a18d90bf64c23e2d
Autor:
Sehwan Song, Dooyong Lee, Yeongjun Son, Yesul Choi, Jiwoong Kim, Seonghoon Han, Jisung Lee, Seokjun Kim, Seung Gyo Jeong, Si‐Heon Lim, Jiafeng Yan, Songkil Kim, Woo Seok Choi, Hyun Ho Kim, Jaeyong Kim, Jong‐Seong Bae, Naoshia Takesue, Chanyong Hwang, Sungkyun Park
Publikováno v:
Small Science, Vol 4, Iss 4, Pp n/a-n/a (2024)
Vanadium oxides, such as V2O3, VO2, and V2O5, have attracted considerable attention because of the fascinating physical properties of each oxidation state. On the other hand, precisely controlling the individual oxidation states is difficult due to t
Externí odkaz:
https://doaj.org/article/d32c6ba944e14040a0b155b0e99279cc
Autor:
Fengdeng Liu, Tristan K. Truttmann, Dooyong Lee, Bethany E. Matthews, Iflah Laraib, Anderson Janotti, Steven R. Spurgeon, Scott A. Chambers, Bharat Jalan
Publikováno v:
Communications Materials, Vol 3, Iss 1, Pp 1-8 (2022)
Germanium-based oxides are wide bandgap semiconductors with the prospects of ambipolar doping. Here, a hybrid molecular beam epitaxy is demonstrated for the growth of both rutile Sn1-x Ge x O2 and perovskite SrSn1-x Ge x O3 films.
Externí odkaz:
https://doaj.org/article/c2ad46aabfe04c3bb2e2ecb8d643f9bb
Publikováno v:
APL Materials, Vol 10, Iss 9, Pp 091118-091118-6 (2022)
Perovskite SrIrO3 films and its heterostructures are very promising, yet less researched, avenues to explore interesting physics originating from the interplay between strong spin–orbit coupling and electron correlations. Elemental iridium is a com
Externí odkaz:
https://doaj.org/article/954f13d7bc31429d94ef83e8aa0d81ff
Autor:
Anh Duc Nguyen, Tri Khoa Nguyen, Chinh Tam Le, Sungdo Kim, Farman Ullah, Yangjin Lee, Sol Lee, Kwanpyo Kim, Dooyong Lee, Sungkyun Park, Jong-Seong Bae, Joon I. Jang, Yong Soo Kim
Publikováno v:
ACS Omega, Vol 4, Iss 25, Pp 21509-21515 (2019)
Externí odkaz:
https://doaj.org/article/8ec8ca78724e4a2d8be5b856500e6fca
Autor:
William Nunn, Sreejith Nair, Hwanhui Yun, Anusha Kamath Manjeshwar, Anil Rajapitamahuni, Dooyong Lee, K. Andre Mkhoyan, Bharat Jalan
Publikováno v:
APL Materials, Vol 9, Iss 9, Pp 091112-091112-7 (2021)
A seemingly simple oxide with a rutile structure, RuO2, has been shown to possess several intriguing properties ranging from strain-stabilized superconductivity to a strong catalytic activity. Much interest has arisen surrounding the controlled synth
Externí odkaz:
https://doaj.org/article/31f2c8f1c0d34003b61aeff1fa1012b2
Publikováno v:
Advances in Civil Engineering, Vol 2019 (2019)
After the first modular construction project in Korea in 2003, the scope and demand for modular systems have gradually increased. However, modular producers in Korea utilize spreadsheets to manage the process, manpower, and materials required for mod
Externí odkaz:
https://doaj.org/article/a2ff25bc1d7a41ad836a433a4f723ca2
Autor:
Widitha S. Samarakoon, Peter V. Sushko, Dooyong Lee, Bharat Jalan, Hua Zhou, Yingge Du, Zhenxing Feng, Scott A. Chambers
Publikováno v:
Physical Review Materials. 6
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9628b6c2a4234757ea6af353b12cb021
https://doi.org/10.1103/physrevmaterials.6.103405
https://doi.org/10.1103/physrevmaterials.6.103405
Autor:
Zhifei, Yang, Dooyong, Lee, Jin, Yue, Judith, Gabel, Tien-Lin, Lee, Richard D, James, Scott A, Chambers, Bharat, Jalan
Publikováno v:
Proceedings of the National Academy of Sciences of the United States of America. 119(23)
SignificanceSemiconductor interfaces are among the most important in use in modern technology. The properties they exhibit can either enable or disable the characteristics of the materials they connect for functional performance. While much is known
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=pmid________::3456409e10c908720df0f0e8150a65d6
https://pubmed.ncbi.nlm.nih.gov/35653574
https://pubmed.ncbi.nlm.nih.gov/35653574
Autor:
Zhifei Yang, Dooyong Lee, Jin Yue, Judith Gabel, Tien-Lin Lee, Richard D. James, Scott A. Chambers, Bharat Jalan
Publikováno v:
Proceedings of the National Academy of Sciences. 119
Significance Semiconductor interfaces are among the most important in use in modern technology. The properties they exhibit can either enable or disable the characteristics of the materials they connect for functional performance. While much is known
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4aaa3468cb6105636310f82a9d6b1422
https://doi.org/10.1073/pnas.2202189119
https://doi.org/10.1073/pnas.2202189119