Zobrazeno 1 - 7
of 7
pro vyhledávání: '"Doosung Lee"'
Publikováno v:
Journal of the Korean Physical Society. 60:1313-1316
We have fabricated TiN/(HfO2)/TiO2/Pt/Ti stacks on SiO2/Si substrates and investigated the characteristics of the bipolar resistive switching of those stacks. Compared to the single TiO2 structure, more stable bipolar switching in the current-voltage
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::69d10cc84557364b24b79d6bcc965288
https://doi.org/10.3938/jkps.60.1313
https://doi.org/10.3938/jkps.60.1313
Autor:
Jonggi Kim, Doosung Lee, Heedo Na, Yong Hun Sung, Sunghoon Lee, Hyunchul Sohn, Dae Hong Ko, Jung Ho Yoo
Publikováno v:
Current Applied Physics. 11:e70-e74
In this work, we investigated the effect of W doping on the resistance switching behavior of NiO x films. The W doping is expected to produce cation-rich NiO x film because W has high valence state compared to Ni in NiO x . To measure resistance swit
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e641d06bf8f13913fdc6fcccd3e94848
https://doi.org/10.1016/j.cap.2010.11.126
https://doi.org/10.1016/j.cap.2010.11.126
Publikováno v:
Applied Physics A. 102:997-1001
The characteristics of resistive switching of TiN/HfO2/Ti/HfO2/Pt/Ti stacks on SiO2/Si substrates were investigated and compared to TiN/HfO2/Pt/Ti stacks in order to study Ti interlayer effects on resistive switching. The Ti interlayers were deposite
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ae5c79eef536e3d37c2a365782e9f1fe
https://doi.org/10.1007/s00339-011-6312-5
https://doi.org/10.1007/s00339-011-6312-5
Publikováno v:
ECS Meeting Abstracts. :60-60
not Available.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::dd15018cc47b4b5c312677708b1b3097
https://doi.org/10.1149/ma2005-02/1/60
https://doi.org/10.1149/ma2005-02/1/60
Publikováno v:
Journal of The Electrochemical Society. 153:J69
The microstructures and the thermal stability of Ni germanosilicide films on epi-Si 1-x Ge x (x = 0.1,0.2)/Si substrates were studied for different silicidation temperatures. Ni films 25 nm thick were deposited by direct current magnetron sputtering
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::126f093bd332660eb55670ed49bf0bcf
https://doi.org/10.1149/1.2200286
https://doi.org/10.1149/1.2200286
Publikováno v:
Journal of Materials Chemistry; 7/14/2010, Vol. 20 Issue 26, p5454-5461, 8p
Autor:
Hyunjung Lee, Taihyun Chang, Doosung Lee, Myung Seob Shim, Haining Ji, Nonidez, William K., Mays, Jimmy W.
Publikováno v:
Analytical Chemistry. 04/15/2001, Vol. 73 Issue 8, p1726. 7p. 3 Diagrams, 2 Charts, 9 Graphs.