Zobrazeno 1 - 10
of 114
pro vyhledávání: '"DooWon Lee"'
Publikováno v:
Nanomaterials, Vol 14, Iss 22, p 1841 (2024)
In this paper, we optimized IGZO/Ag/IGZO (IAI) multilayer films by post-rapid thermal annealing (RTA) to enhance the electrical conductivity and optical transmittance in visible wavelengths for solar cell applications. Our optimized device showed an
Externí odkaz:
https://doaj.org/article/e87c39550766497bbfcd5ff41bdadc38
Publikováno v:
Sensors, Vol 24, Iss 19, p 6382 (2024)
We present a transparent memristor with a rough-surface (RS) bottom electrode (BE) with enhanced performance and reliability for a gasistor, which is a gas sensor plus a memristor, and its application in this paper. The transparent memristor, with an
Externí odkaz:
https://doaj.org/article/56a6ef49128b419c81a5ff8df5efdc65
Publikováno v:
Micromachines, Vol 15, Iss 1, p 77 (2023)
Low-power-consumption gas sensors are crucial for diverse applications, including environmental monitoring and portable Internet of Things (IoT) systems. However, the desorption and adsorption characteristics of conventional metal oxide-based gas sen
Externí odkaz:
https://doaj.org/article/283701b676954dbc8235874bca07d8b7
Publikováno v:
IEEE Access, Vol 10, Pp 77170-77175 (2022)
Zinc-doped indium oxide (IZO)+ tin-doped indium oxide (ITO) is proposed in this study as a double-layered transparent conductive oxide (TCO) for the application of silicon heterojunction (SHJ) solar cells. IZO is consecutively deposited via radio fre
Externí odkaz:
https://doaj.org/article/99cbec8b0fc744219f855b60ddf10131
Publikováno v:
IEEE Access, Vol 10, Pp 6622-6628 (2022)
Charge-trap based resistive switching (RS) has attracted attention in the resistive random-access memory (RRAM) industry due to its gradual RS behavior for multi-level and synaptic applications. In this work, in order to lower the operating current l
Externí odkaz:
https://doaj.org/article/c4d522749f6f4876989295683a9c1cb9
Publikováno v:
IEEE Access, Vol 10, Pp 90401-90407 (2022)
The electrical and optical properties of IGZO-based transparent conductive oxide (TCO), fabricated by reactive-sputtering, are optimized using post microwave treatment (MWT), not rapid temperature annealing (RTA), for silicon solar cell. Compared to
Externí odkaz:
https://doaj.org/article/5dab2f839f7a4ef4af674d21515413b0
Publikováno v:
Nanomaterials, Vol 13, Iss 12, p 1848 (2023)
In aerospace applications, SiOx deposition on perovskite solar cells makes them more stable. However, the reflectance of the light changes and the current density decreases can lower the efficiency of the solar cell. The thickness of the perovskite m
Externí odkaz:
https://doaj.org/article/8041a307fbbc434da7a84f16291a8362
Autor:
Doowon Lee, Hee-Dong Kim
Publikováno v:
Nanomaterials, Vol 13, Iss 10, p 1665 (2023)
BN-based resistive random-access memory (RRAM) has emerged as a potential candidate for non-volatile memory (NVM) in aerospace applications, offering high thermal conductivity, excellent mechanical, and chemical stability, low power consumption, high
Externí odkaz:
https://doaj.org/article/ae22cb389e524322bbe6903807a66d38
Publikováno v:
Nanomaterials, Vol 13, Iss 9, p 1550 (2023)
Antireflection coatings (ARCs) with an indium thin oxide (ITO) layer on silicon heterojunction solar cells (SHJ) have garnered significant attention, which is due to their potential for increasing current density (Jsc) and enhancing reliability. We p
Externí odkaz:
https://doaj.org/article/2f0f19b2ead04c4480fefeccb23e0f01
Publikováno v:
IEEE Access, Vol 9, Pp 144264-144269 (2021)
In this study, we investigated the self-rectifying characteristics of $p$ -Si/O-doped ZrN/TiN structures in order to overcome a disturbance between neighboring cells in array structures. The proposed device shows a nonlinear selection characteristic
Externí odkaz:
https://doaj.org/article/3c217f9be9fc43669b9772c460d43b9b