Zobrazeno 1 - 10
of 72
pro vyhledávání: '"Doo-Seung Um"'
Publikováno v:
Nanoscale Research Letters, Vol 16, Iss 1, Pp 1-14 (2021)
Abstract Energy harvesting devices based on the triboelectric effect have attracted great attention because of their higher output performance compared to other nanogenerators, which have been utilized in various wearable applications. Based on the w
Externí odkaz:
https://doaj.org/article/531219940c5d443882c587a6fbf57684
Autor:
Han Byeol Lee, Young-Hee Joo, Harshada Patil, Gwan-Ha Kim, Insu Kang, Bo Hou, Deok-kee Kim, Doo-Seung Um, Chang-Il Kim
Publikováno v:
Materials Research Express, Vol 10, Iss 1, p 016401 (2023)
Due to its high dielectric constant ( κ ), the BaTiO _3 (BTO) thin film has significant potential as a next-generation dielectric material for metal oxide semiconductor field-effect transistors (MOSFETs). Hence, the evaluation of the BTO thin film e
Externí odkaz:
https://doaj.org/article/54e6b07317d74be7ba8b66811ac6db40
Autor:
Jong-Chang Woo, Doo-Seung Um
Publikováno v:
Micromachines, Vol 13, Iss 10, p 1556 (2022)
The global RE100 campaign is attracting attention worldwide due to climate change caused by global warming, increasingly highlighting the efficiency of renewable energy. Texturing of photovoltaic devices increases the devices’ efficiency by reducin
Externí odkaz:
https://doaj.org/article/e02d44bf3f9744b4a72b59b92fd61975
Autor:
Doo-Seung Um, Mi-Jin Jin, Jong-Chang Woo, Dong-Pyo Kim, Jungmin Park, Younghun Jo, Gwan-Ha Kim
Publikováno v:
Crystals, Vol 11, Iss 4, p 351 (2021)
Straightforward growth of nanostructured low-bandgap materials is a key issue in mass production for electronic device applications. We report here facile nanowall growth of MoS2-MoSX using sputter deposition and investigate the electronic properties
Externí odkaz:
https://doaj.org/article/30584de3dc334ab4a4d1ffeff8f33859
Publikováno v:
Materials Research Express, Vol 8, Iss 12, p 126402 (2021)
Al-doped ZnO (AZO) is a promising transparent conducting oxide that can replace indium tin oxide (ITO) owing to its excellent flexibility and eco-friendly characteristics. However, it is difficult to immediately replace ITO with AZO because of the di
Externí odkaz:
https://doaj.org/article/3a3842acb7cf43ac98912cb3f4f0149f
High-density plasma etching characteristics of aluminum-doped zinc oxide thin films in Cl2/Ar plasma
Publikováno v:
Materials Research Express, Vol 7, Iss 10, p 106301 (2020)
We investigated the etching characteristics of aluminum-doped zinc oxide (AZO) thin films in an adaptively coupled plasma (ACP) system. The dry etching characteristics of AZO films were studied by changing the Cl _2 /Ar gas mixing ratio, RF power, DC
Externí odkaz:
https://doaj.org/article/ff00a24805f54272b5f656e96e4d5dab
Autor:
Sejin Kim, Dong-Geon Lee, Qiang Liu, Mi-Jin Jin, Bo Hou, Seungyoung Park, Ji-Yeop Kim, Doo-Seung Um, Chang-Il Kim
Publikováno v:
Sensors & Materials; 2024, Vol. 36 Issue 9, Part 1, p3677-3690, 14p
Publikováno v:
Plasma Science and Technology.
Indium gallium tin oxide (IGTO) thin films have the potential for high mobility and low-temperature processing, which makes them suitable for applications such as display backplanes and high-voltage switching devices. However, very few studies have i
Publikováno v:
Applied Physics A. 128