Zobrazeno 1 - 10
of 48
pro vyhledávání: '"Doo San, Kim"'
Autor:
Hong Seong Gil, Doo San Kim, Yun Jong Jang, Dea Whan Kim, Hea In Kwon, Gyoung Chan Kim, Dong Woo Kim, Geun Young Yeom
Publikováno v:
Scientific Reports, Vol 13, Iss 1, Pp 1-12 (2023)
Abstract In this study, an isotropic etching process of SiO2 selective to Si3N4 using NF3/H2/methanol chemistry was investigated. HF was formed using a NF3/H2 remote plasma, and in order to remove the F radicals, which induces spontaneous etching of
Externí odkaz:
https://doaj.org/article/4fabe9f2b85249efbf109dee54cf3eb6
Autor:
Won Oh Lee, Ki Hyun Kim, Doo San Kim, You Jin Ji, Ji Eun Kang, Hyun Woo Tak, Jin Woo Park, Han Dock Song, Ki Seok Kim, Byeong Ok Cho, Young Lae Kim, Geun Young Yeom
Publikováno v:
Scientific Reports, Vol 12, Iss 1, Pp 1-9 (2022)
Abstract Precise and selective removal of silicon nitride (SiNx) over silicon oxide (SiOy) in a oxide/nitride stack is crucial for a current three dimensional NOT-AND type flash memory fabrication process. In this study, fast and selective isotropic
Externí odkaz:
https://doaj.org/article/d89a414ff0824370aad9a742a2808c8d
Publikováno v:
Journal of Animal Reproduction and Biotechnology, Vol 36, Iss 4, Pp 230-238 (2021)
This study attempted to determine the characteristic features of postpartum dairy cows during their return to estrus. Moreover, it investigated the effects of abnormal ovarian cycles (AOC) on subsequent reproductive performance and the relationship b
Externí odkaz:
https://doaj.org/article/13a90066180d45549406256c8b6b1d09
Publikováno v:
Journal of Animal Reproduction and Biotechnology, Vol 35, Iss 1, Pp 58-64 (2020)
This present study was conducted to investigate protective effect of discontinuous Percoll gradient containing alpha-linolenic acid (ALA) before freezing process on viability, acrosome damage, mitochondrial activity, and oxidative stress of frozen-th
Externí odkaz:
https://doaj.org/article/c693b3bdccc54106948b96405fa462cf
Autor:
Eunjeong Jeon, Jihwan Lee, Doo-San Kim, Jun-Kyu Son, Dong-Hyeon Kim, Da Jin Sol Jung, Kwang-Seok Ki, Manhye Han, Seongsoo Hwang
Publikováno v:
Journal of the Korea Academia-Industrial cooperation Society. 23:493-499
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a66aee0283256f83ae363a4aa6c45386
https://doi.org/10.5762/kais.2022.23.9.493
https://doi.org/10.5762/kais.2022.23.9.493
Autor:
Doo San Kim, Byeong cheol Lee
Publikováno v:
Journal & Article Management System. 46:115-134
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fc09a40d5f19b9873f9771edd9ee415b
https://doi.org/10.31927/asec.18.2.6
https://doi.org/10.31927/asec.18.2.6
Autor:
Jihwan Lee, Doo-San Kim, Inchul Choi, Donghyeon Kim, Junkyu Son, Eunjeong Jeon, Dajinsol Jung, Manhye Han, Seungmin Ha, Seongsoo Hwang
Publikováno v:
Journal of Animal Science and Technology.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c2cb4b0b8f177e33b6c4bbd2ab365a09
https://doi.org/10.5187/jast.2022.e113
https://doi.org/10.5187/jast.2022.e113
Publikováno v:
Nanotechnology. 34(3)
Sn is the one of the materials that can be used for next generation extreme ultraviolet (EUV) mask material having a high absorption coefficient and, for the fabrication of the next generation EUV mask, a precise etching of Sn is required. In this st
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::a0079ed3f69ff089e5886775f1919e74
https://pubmed.ncbi.nlm.nih.gov/36223734
https://pubmed.ncbi.nlm.nih.gov/36223734
Publikováno v:
ECS Transactions. 102:39-43
Phase change random access memory (PCRAM) is one of the most industrially applicable memory devices because of its advantages such as non-volatility, high speed, scalability, and low power consumption. Ovonic threshold switch (OTS) materials are used
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::83aeb6f85da6e969cabff79f33850a4f
https://doi.org/10.1149/10202.0039ecst
https://doi.org/10.1149/10202.0039ecst
Autor:
Ye Eun Kim, Doo San Kim, Yun Jong Jang, Hong Seong Gil, Ho Seop Jeon, Jong Woo Hong, In Ho Kim, Cheol Kim, Jeong-Heon Park, Geun Young Yeom
Publikováno v:
Journal of Vacuum Science & Technology A. 41:033005
In order to etch CoFeB and MgO constituting the magnetic tunnel junction (MTJ) layer of magnetic random access memory, rf-biased reactive ion beam etching (RIBE) with a H2:NH3 gas mixture was introduced and the etching characteristics were investigat
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::87641f6386c83c3f458af7a70d7319b9
https://doi.org/10.1116/6.0002465
https://doi.org/10.1116/6.0002465