Zobrazeno 1 - 10
of 19
pro vyhledávání: '"Doo Hyung Kang"'
Autor:
Hocheol Lim, Doo Hyung Kang, Jeonghoon Kim, Aidan Pellow-Jarman, Shane McFarthing, Rowan Pellow-Jarman, Hyeon-Nae Jeon, Byungdu Oh, June-Koo Kevin Rhee, Kyoung Tai No
Publikováno v:
Scientific Reports, Vol 14, Iss 1, Pp 1-13 (2024)
Abstract Quantum computers offer significant potential for complex system analysis, yet their application in large systems is hindered by limitations such as qubit availability and quantum hardware noise. While the variational quantum eigensolver (VQ
Externí odkaz:
https://doaj.org/article/dfd166ae7f7e4143acc2967d81ac3730
Autor:
Doo Hyung Kang, Mincheol Shin
Publikováno v:
Scientific Reports, Vol 11, Iss 1, Pp 1-8 (2021)
Abstract Recently, magnetic tunnel junctions (MTJs) with shape perpendicular magnetic anisotropy (S-PMA) have been studied extensively because they ensure high thermal stability at junctions smaller than 20 nm. Furthermore, spin-transfer torque (STT)
Externí odkaz:
https://doaj.org/article/68d898441c404cd48403c7d30db4db61
Publikováno v:
IEEE Transactions on Magnetics. 55:1-6
Employing a macrospin simulation and the Technology-Computer-Aided-Design device simulator, we calculated the output voltage of serially connected spin torque nano-oscillators (STNOs) integrated directly on a metal–oxide–semiconductor field-effec
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c99d90484bf480cfe1ba1dd3c7643ed2
https://doi.org/10.1109/tmag.2019.2893139
https://doi.org/10.1109/tmag.2019.2893139
Publikováno v:
IEEE Transactions on Magnetics. 55:1-5
We perform macrospin simulations on a magnetic tunnel junction structure with perpendicular magnetic anisotropy, in which the conventional free layer is substituted with synthetic antiferromagnetic free layers to improve the thermal stability. In ord
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::881b86a19222acfda8793ff72bbcedd1
https://doi.org/10.1109/tmag.2019.2898947
https://doi.org/10.1109/tmag.2019.2898947
Publikováno v:
2020 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD).
We present a micromagnetic simulation study of shape deformation and edge roughness effect in the spin orbit torque-magnetic random access memory (SOT-MRAM). The two different write schemes, magnetic field induced SOT write scheme and SOT-spin transf
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3f1fe7b4fd33a014fa58d14ed46dc80a
https://doi.org/10.23919/sispad49475.2020.9241675
https://doi.org/10.23919/sispad49475.2020.9241675
Publikováno v:
IEEE Transactions on Nanotechnology. 17:122-127
We propose spin torque nano-oscillators (STNOs) directly integrated on a metal-oxide-semiconductor field-effect-transistor ( mosfet ). In this model, we consider an array of STNOs, where the STNOs are synchronized via magnetodipolar interaction. We f
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c87d396be1351af16781f0ae0f38c5c8
https://doi.org/10.1109/tnano.2017.2777505
https://doi.org/10.1109/tnano.2017.2777505
Autor:
Kyoung-Woong Moon, Kab-Jin Kim, Soogil Lee, Mincheol Shin, Sang Hoon Kim, Doo Hyung Kang, Ji-Seok Yang, Albert Min Gyu Park
Publikováno v:
Applied Physics Express. 14:103002
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::83b1d842d118836380c243eab32c838d
https://doi.org/10.35848/1882-0786/ac2242
https://doi.org/10.35848/1882-0786/ac2242
Publikováno v:
Journal of Physics D: Applied Physics. 54:435001
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0e56743a6f708346b9bc63d5e6a56abe
https://doi.org/10.1088/1361-6463/ac181a
https://doi.org/10.1088/1361-6463/ac181a
Publikováno v:
AIP Advances, Vol 11, Iss 1, Pp 015035-015035-5 (2021)
We demonstrate the effect of shape deformation in spin–orbit torque magnetoresistive random access memory (SOT-MRAM) based on micromagnetic simulation by generating 1000 randomly deformed samples using the exponentially decaying autocorrelation fun
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::d99e0b16e1d9daf79615a96bb013be0e
https://doi.org/10.1063/9.0000116
https://doi.org/10.1063/9.0000116
Publikováno v:
IEEE Transactions on Magnetics. 52:1-6
We have found that the stacked spin Hall oscillator (SHO) based on the spin Hall effect and anisotropy magnetoresistance is synchronized via magnetodipolar interaction calculated with consideration of the shape of the SHO. Employing a macrospin simul
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b4020bb9217e802d81e8b6db0b88fc0d
https://doi.org/10.1109/tmag.2016.2597127
https://doi.org/10.1109/tmag.2016.2597127