Zobrazeno 1 - 10
of 95
pro vyhledávání: '"Doo Hyeb Youn"'
Publikováno v:
Applied Sciences, Vol 11, Iss 12, p 5565 (2021)
This paper discusses the fabrication and characterization of electrospun nanofiber scaffolds made of polystyrene (PS). The scaffolds were characterized in terms of their basis material molecular weight, fiber diameter distribution, contact angles, co
Externí odkaz:
https://doaj.org/article/292e07230de343d2a6af8b36e9a6266c
Publikováno v:
Applied Sciences, Vol 11, Iss 5565, p 5565 (2021)
Applied Sciences
Volume 11
Issue 12
Applied Sciences
Volume 11
Issue 12
This paper discusses the fabrication and characterization of electrospun nanofiber scaffolds made of polystyrene (PS). The scaffolds were characterized in terms of their basis material molecular weight, fiber diameter distribution, contact angles, co
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::b34430fcd88a3a1b0c76f10bebd339d8
https://www.mdpi.com/2076-3417/11/12/5565
https://www.mdpi.com/2076-3417/11/12/5565
Autor:
Servin Rathi, Changhee Lee, Dongsuk Lim, Muhammad Atif Khan, Sun Jin Yun, Doo-Hyeb Youn, Yunseob Kim, Gil-Ho Kim
Publikováno v:
ACS Applied Materials & Interfaces. 10:23961-23967
Two-dimensional (2D) material-based heterostructures provide a unique platform where interactions between stacked 2D layers can enhance the electrical and opto-electrical properties as well as give rise to interesting new phenomena. Here, the operati
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::86241a300035a96320ba5e52c45b4555
https://doi.org/10.1021/acsami.8b05549
https://doi.org/10.1021/acsami.8b05549
Autor:
Jin Woo Park, Muhammad Atif Khan, Yoontae Lee, Sun Jin Yun, Gil-Ho Kim, Doo Hyeb Youn, Servin Rathi, Dongsuk Lim
Publikováno v:
ACS Applied Materials & Interfaces. 9:26983-26989
The self-biasing effects of ion gel from source and drain electrodes on electrical characteristics of single layer and few layer molybdenum disulfide (MoS2) field-effect transistor (FET) have been studied. The self-biasing effect of ion gel is tested
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::59c8409f7b7c59867836381f2f94a274
https://doi.org/10.1021/acsami.7b06071
https://doi.org/10.1021/acsami.7b06071
Tunable electrical properties of multilayer HfSe2field effect transistors by oxygen plasma treatment
Autor:
Yoontae Lee, Servin Rathi, Muhammad Atif Khan, Gil-Ho Kim, Dongsuk Lim, Doo-Hyeb Youn, Chung-sam Jun, Sun Jin Yun, Lijun Li, Moon-Shik Kang, Inyeal Lee, Jin Woo Park
Publikováno v:
Nanoscale. 9:1645-1652
HfSe2 field effect transistors are systematically studied in order to selectively tune their electrical properties by optimizing layer thickness and oxygen plasma treatment. The optimized plasma-treated HfSe2 field effect transistors showed a high on
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::252aa2a23c6cf6edcddc1fcbe6bac3d5
https://doi.org/10.1039/c6nr08467b
https://doi.org/10.1039/c6nr08467b
Autor:
Changbong Yeon, Nae-Man Park, Sun Jin Yun, Inyeal Lee, Jin Sik Choi, Doo-Hyeb Youn, Gil-Ho Kim
Publikováno v:
RSC Advances. 7:44945-44953
Uniform and reproducible alignment methods for one-dimensional structures, such as wires, tubes, and fibers are essential for the fabrication of commercial devices. This paper presents an arbitrary alignment-angle control method. The mechanical stret
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7060f649fcef86fafbd332c90d6a5e95
https://doi.org/10.1039/c7ra08223a
https://doi.org/10.1039/c7ra08223a
Autor:
Doo-Hyeb Youn1 dhyoun@etri.re.kr, Seong-Hyun Kim1, Yong-Suk Yang1, Sang-Chul Lim1, Seong-Jin Kim2, Su-Han Ahn3, Hyo-Sun Sim3, Seung-Myoung Ryu3, Dong-Wook Shin4, Ji-Beom Yoo4
Publikováno v:
Applied Physics A: Materials Science & Processing. Sep2009, Vol. 96 Issue 4, p933-938. 6p. 4 Diagrams, 2 Graphs.
Publikováno v:
Nanotechnology. 31(10)
A gas sensor based on a hierarchical WS
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=pmid________::b108ba524fd44d3a1dec8396295e9e83
https://pubmed.ncbi.nlm.nih.gov/31739292
https://pubmed.ncbi.nlm.nih.gov/31739292
Autor:
Gwan Hyoung Lee, James Hone, Sun Jin Yun, Jeongyong Kim, Jin Woo Park, Kyung-Soo Yi, Servin Rathi, Dongsuk Lim, Inyeal Lee, Young Duck Kim, Krishna P. Dhakal, Yoontae Lee, Lijun Li, Changgu Lee, Gil-Ho Kim, Doo Hyeb Youn
Publikováno v:
Advanced Materials. 28:9519-9525
An ambipolar dual-channel field-effect transistor (FET) with a WSe2 /MoS2 heterostructure formed by separately controlled individual channel layers is demonstrated. The FET shows a switchable ambipolar behavior with independent carrier transport of e
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b50e43d6775d116f4b5fe98a35d93835
https://doi.org/10.1002/adma.201601949
https://doi.org/10.1002/adma.201601949
Autor:
Muhammad Atif, Khan, Servin, Rathi, Changhee, Lee, Yunseob, Kim, Hanul, Kim, Dongmok, Whang, Sun Jin, Yun, Doo-Hyeb, Youn, Kenji, Watanabe, Takashi, Taniguchi, Gil-Ho, Kim
Publikováno v:
Nanotechnology. 29(39)
A graphene-MoS
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=pmid________::dd066eb0eb201222a5e619778d572ccf
https://pubmed.ncbi.nlm.nih.gov/29968581
https://pubmed.ncbi.nlm.nih.gov/29968581