Zobrazeno 1 - 10
of 44
pro vyhledávání: '"Donnie K. Reinhard"'
Publikováno v:
Diamond and Related Materials. 19:1446-1452
Microwave plasma assisted synthesis of diamond is experimentally investigated using high purity, 2–5% CH4/H2 input gas chemistries and operating at high pressures of 180–240 Torr. A microwave cavity plasma reactor (MCPR) was specifically modified
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b3d610c19ce5a81d5ac3234c2b3842d3
https://doi.org/10.1016/j.diamond.2010.07.005
https://doi.org/10.1016/j.diamond.2010.07.005
Publikováno v:
Diamond and Related Materials. 19:778-782
Diamond etching is characterized using a microwave ECR plasma reactor with regard to etch rate selectivity, surface morphology, and feature size. Etching is performed on diamond substrates using a variety of etch mask materials including aluminum, ti
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8b33ad19f08c39464f784b96e0ebcde6
https://doi.org/10.1016/j.diamond.2010.02.001
https://doi.org/10.1016/j.diamond.2010.02.001
Autor:
Thomas Schuelke, Donnie K. Reinhard, Jes Asmussen, Michael Becker, Timothy A. Grotjohn, R. Ramamurti
Publikováno v:
Diamond and Related Materials. 17:1320-1323
The deposition of boron-doped homoepitaxial single crystal diamond is investigated using a microwave plasma-assisted chemical vapor deposition system. The objective is to deposit high-quality boron-doped single crystal diamond and establish the relat
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::6489b621765420a58311416c331997ff
https://doi.org/10.1016/j.diamond.2008.01.120
https://doi.org/10.1016/j.diamond.2008.01.120
Publikováno v:
Diamond and Related Materials. 17:717-721
Experimental results are presented for the microwave plasma-assisted dry etching of ultrananocrystalline (UNCD), polycrystalline and single crystal diamond materials. A high-rate and anisotropic etching process is developed using a 2.45 GHz microwave
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ff4613d5841cfa9c0e58c389e38530fb
https://doi.org/10.1016/j.diamond.2007.12.067
https://doi.org/10.1016/j.diamond.2007.12.067
Autor:
David King, Jes Asmussen, Donnie K. Reinhard, Timothy A. Grotjohn, M.K. Yaran, Thomas Schuelke
Publikováno v:
Diamond and Related Materials. 17:520-524
The scale up of two microwave plasma assisted chemical vapor deposition processes from 75 mm to 200 mm substrates is investigated. A thermally floating 2.45 GHz reactor is scaled up by increasing its physical size by a factor of 2.7 and exciting the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6e5796fff6b8f39fac2a01e77a9680ac
https://doi.org/10.1016/j.diamond.2007.12.050
https://doi.org/10.1016/j.diamond.2007.12.050
Publikováno v:
Diamond and Related Materials. 15:341-344
The deposition of uniform, low-stress, thick and thin films of ultrananocrystalline diamond (UNCD) is investigated. The process methods and apparatus that enable the uniform and smooth deposition of both thin and thick (> 50 μm) UNCD across 3 in. di
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4753efd7902dbbb11aa750c1257297b6
https://doi.org/10.1016/j.diamond.2005.09.027
https://doi.org/10.1016/j.diamond.2005.09.027
Autor:
M.D. Parr, Donnie K. Reinhard
Publikováno v:
Diamond and Related Materials. 15:207-211
Electrical structures based on thin films of nanocrystalline diamond are described as well as their electrical properties. Diamond films with thickness between 0.25 and 1.0 μm and with average grain sizes of 300 nm and less are formed by microwave p
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::77b004bee895a1e8468add19f8b8c68b
https://doi.org/10.1016/j.diamond.2005.10.019
https://doi.org/10.1016/j.diamond.2005.10.019
Publikováno v:
International Journal of Modelling and Simulation. 25:162-170
The objective of this article is to add to the experimental understanding of the relationship between the electrical properties of diamond and the growth input and output parameters. A wide selection of thin polycrystalline CVD diamond is investigate
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e8012ab480fb73fdb44ff721fc8169d3
https://doi.org/10.1080/02286203.2005.11442330
https://doi.org/10.1080/02286203.2005.11442330
Autor:
D.T. Tran, Thomas Schuelke, Jes Asmussen, Michael Becker, Donnie K. Reinhard, Timothy A. Grotjohn
Publikováno v:
Diamond and Related Materials. 25:84-86
Single crystalline diamond is of interest for high power optical applications for a variety of reasons including transparency, high thermal conductivity and very low birefringence values. Potential applications include intracavity diamond components
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ddb17de5adf840373cf12e7cdc325e90
https://doi.org/10.1016/j.diamond.2012.02.011
https://doi.org/10.1016/j.diamond.2012.02.011
Autor:
Thomas Schuelke, Michael Becker, Donnie K. Reinhard, Jes Asmussen, Timothy A. Grotjohn, R. Ramamurti
Publikováno v:
Diamond and Related Materials. 18:704-706
The deposition of high quality single crystal boron-doped diamond is studied. The experimental conditions for the synthesis of 1–2 mm thick boron-doped diamond are investigated using a high power density microwave plasma-assisted chemical vapor dep
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::bd1dfc3089698563c6a90eebba06bde2
https://doi.org/10.1016/j.diamond.2009.01.031
https://doi.org/10.1016/j.diamond.2009.01.031