Zobrazeno 1 - 10
of 12
pro vyhledávání: '"Doni Parnell"'
Autor:
Daniel Corliss, Martha I. Sanchez, Doni Parnell, Yongan Xu, Chi-Chun Liu, Jing Guo, Lovejeet Singh, Nelson Felix, Yann Mignot, Tsuyoshi Furukawa, David Hetzer, Daniel P. Sanders, Luciana Meli, Sean D. Burns, Kristin Schmidt, Richard A. Farrell, Kafai Lai, John C. Arnold, Cheng Chi, Andrew Metz
Publikováno v:
SPIE Proceedings.
In this study, the integrity and the benefits of the DSA shrink process were verified through a via-chain test structure, which was fabricated by either DSA or baseline litho/etch process for via layer formation while metal layer processes remain the
Autor:
Robert L. Bruce, Stuart A. Sieg, Mark Somervell, Daniel P. Sanders, Richard A. Farrell, Hoa Truong, Kafai Lai, Akiteru Ko, Chi-Chun Liu, Andrew Metz, Matthew E. Colburn, Kristin Schmidt, Nelson Felix, Elliott Franke, Daniel Corliss, John C. Arnold, Tsuyoshi Furukawa, Indira Seshadri, Hsinyu Tsai, Yann Mignot, Ekmini Anuja De Silva, Lovejeet Singh, David Hetzer, Luciana Meli, Doni Parnell, Martha I. Sanchez, Scott LeFevre, Cheng Chi
Publikováno v:
SPIE Proceedings.
The progress of three potential DSA applications, i.e. fin formation, via shrink, and pillars, were reviewed in this paper. For fin application, in addition to pattern quality, other important considerations such as customization and design flexibili
Autor:
Paulina Rincon Delgadillo, Boon Teik Chan, Jean-Francois de Marneffe, Kaidong Xu, Doni Parnell, Werner Boullart, Shigeru Tahara, Eiichi Nishimura, Roel Gronheid
Publikováno v:
Microelectronic Engineering. 123:180-186
We demonstrated DSA pattern transfer with 20-25nm of block-copolymer.We developed several approaches to increase the etch selectivity of PS towards PMMA.We introduced SiCl4 encapsulation prior to Si3N4 hardmask etch.LWR/LER of 2.5-2.6nm can be demons
Autor:
Peter De Schepper, Jason K. Stowers, Fumiko Yamashita, Geert Vandenberghe, Andrew Grenville, Danilo De Simone, Stephen T. Meyers, Vinh Luong, Benjamin L. Clark, Frederic Lazzarino, Michael Kocsis, Doni Parnell, Ming Mao
Publikováno v:
Extreme Ultraviolet (EUV) Lithography VII.
Inpria has developed a directly patternable metal oxide hard-mask as a robust, high-resolution photoresist for EUV lithography. In this paper we demonstrate the full integration of a baseline Inpria resist into an imec N7 BEOL block mask process modu
Autor:
Koichi Yatsuda, Shinichiro Kawakami, Mark Somervell, Toshikatsu Tobana, Benjamen M. Rathsack, Doni Parnell, Makoto Muramatsu, Seiji Nagahara, Ainhoa Romo Negreira, Makiko Dojun, Soichiro Okada, Etsuo Iijima, Tadatoshi Tomita, Hiroyuki Iwaki, Takashi Yamauchi, Takeo Nakano, Takahiro Kitano, Kathleen Nafus, Vinayak Rastogi, Fumiko Iwao, Takanori Nishi, Jean-Luc Peyre
Publikováno v:
Advances in Patterning Materials and Processes XXXII.
Directed Self-Assembly (DSA) is being extensively evaluated for application in semiconductor process integration.1-7 Since 2011, the number of publications on DSA at SPIE has exploded from roughly 26 to well over 80, indicating the groundswell of int
Autor:
Paul F. Nealey, Dieter Van den Heuvel, Doni Parnell, Nadia Vandenbroeck, Lieve Van Look, Roel Gronheid, Paulina Rincon-Delgadillo, Hari Pathangi, Ryota Harukawa, Venkat Nagaswami, Guanyang Lin, Yi Cao, Ito Chikashi, Lucia D'Urzo, Boon Teik Chan, Jihoon Kim, Kathleen Nafus, Hareen Bayana
Publikováno v:
Alternative Lithographic Technologies VII.
High defect density in thermodynamics driven DSA flows has been a major cause of concern for a while and several questions have been raised about the relevance of DSA in high volume manufacturing. The major questions raised in this regard are: 1. Wha
Autor:
Mark Somervell, Kathleen Nafus, Takashi Yamauchi, Todd R. Younkin, Makoto Muramatsu, Roel Gronheid, A. Romo-Negreira, Steven Demuynck, Doni Parnell, T. Seo, Nadia Vandenbroeck, Shinichiro Kawakami, D. J. Guerrero
Publikováno v:
SPIE Proceedings.
An electrical test vehicle for fabricating direct self-assembly (DSA) sub-30 nm via interconnects has been fabricated employing a soft mask grapho-epitaxy contact-hole shrink. The generation of the resist pre-pattern was carried out using 193i lithog
Autor:
Nadia Vandenbroeck, Doni Parnell, Guanyang Lin, Jan Doise, Joost Bekaert, Roel Gronheid, Safak Sayan, Vijaya-Kumar Murugesan Kuppuswamy, Mark H. Somervell, Yi Cao
Publikováno v:
SPIE Proceedings.
Directed Self-Assembly (DSA) of Block Co-Polymers (BCP) has become an intense field of study as a potential patterning solution for future generation devices. The most critical challenges that need to be understood and controlled include pattern plac
Autor:
Doni Parnell, Etsuo Iijima, Seiji Nagahara, Tadatoshi Tomita, Shinchiro Kawakami, Mark Somervell, Makiko Dojun, Takanori Nishi, Ainhoa Romo Negreira, Jean-Luc Peyre, Takeo Nakano, Koichi Yatsuda, Kathleen Nafus, Hiroyuki Iwaki, Mariko Ozawa, Takahiro Kitano, Takashi Yamauchi, Soichiro Okada, Takumi Ishiguro, Toshikatsu Tobana, Makoto Muramatsu, Benjamen M. Rathsack
Publikováno v:
SPIE Proceedings.
Directed Self-Assembly (DSA) is one of the most promising technologies for scaling feature sizes to 16 nm and below. Both line/space and hole patterns can be created with various block copolymer morphologies, and these materials allow for molecular-l
Autor:
Lucia D'Urzo, Paulina Rincon Delgadillo, Venkat Nagaswami, YoungJun Her, Doni Parnell, Yu-Tsung Lee, Yi Cao, Ryota Harukawa, Paul F. Nealey, Mark Somervell, Boon Teik Chan, Lieve Van Look, Dieter Van den Heuvel, Roel Gronheid, Guanyang Lin, Hari Pathangi
Publikováno v:
SPIE Proceedings.
Directed Self-Assembly (DSA) of Block Co-Polymers (BCP) has become an intense field of study as a potential patterning solution for future generation devices. The most critical challenges that need to be understood and controlled include pattern plac