Zobrazeno 1 - 8
of 8
pro vyhledávání: '"Dongyuan Mao"'
Publikováno v:
Scientific Reports, Vol 7, Iss 1, Pp 1-6 (2017)
Abstract In this paper, a new pattern of anomalous random telegraph noise (RTN), named “reversal RTN” (rRTN) induced by single oxide trap, is observed in the drain current of nanoscale metal-oxide-semiconductor field-effect transistors (MOSFETs)
Externí odkaz:
https://doaj.org/article/9a75c4a7e566421a913abc0da57c0793
Publikováno v:
2018 IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA).
As the generally-accepted simple understanding, the random telegraph noise (RTN) induced by a single trap is explained by the “normal” two-state trap model, and the RTNs caused by two or more traps in one device are regarded as the independent su
Publikováno v:
ISCAS
In this paper, the minimum operation voltage (Vmin) shifts of static random access memory (SRAM) induced by random telegraph noises (RTN) are extracted from accurate transient simulation results, including the impacts of both strong and weak coupling
Publikováno v:
2017 IEEE 24th International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA).
In this paper, a new and simple method named Weibull criterion is proposed to identify whether metastable states occur in single random telegraph noise (RTN), which has been verified by both simulation and experiment results. It is helpful for compre
Publikováno v:
2016 13th IEEE International Conference on Solid-State and Integrated Circuit Technology (ICSICT).
The frequency dependence of oxide trap coupling effect in nanoscale MOSFETs under AC switching condition is discussed thoroughly, with experimental and theoretical studies. By using AC STR measurement, a decreased tendency of trap coupling strength w
Publikováno v:
2016 IEEE International Nanoelectronics Conference (INEC).
In this paper, a modified 4-state trap model (4SM) is proposed and adopted in practical simulations including measurement delays, which can well explain the different frequency dependences of single oxide trapping and AC NBTI observed in experiments.
Publikováno v:
2016 International Symposium on VLSI Technology, Systems and Application (VLSI-TSA).
In this paper, multi-phonon transition model of RTN in FinFETs with statistical distribution is integrated into industry-standard BSIM-CMG, and read stability of SRAM is thoroughly examined. Different tendencies of SRAM failure probability plateau ca
Publikováno v:
2015 IEEE 22nd International Symposium on the Physical and Failure Analysis of Integrated Circuits.
The frequency dependence of the single-trap induced degradation (STID) are investigated both experimentally and theoretically, which is the key for the understanding of AC NBTI characteristics and temporal variations. Instead of the conventional 2-st