Zobrazeno 1 - 10
of 14
pro vyhledávání: '"Dongyeol Ju"'
Publikováno v:
Advanced Electronic Materials, Vol 10, Iss 8, Pp n/a-n/a (2024)
Abstract In this study, the resistive switching phenomenon and synaptic mimicry characteristics of an indium tin oxide (ITO)/indium zinc oxide (IZO)/Al2O3/TaN device are characterized. The insertion of a thin Al2O3 layer via atomic layer deposition i
Externí odkaz:
https://doaj.org/article/a6b5687accaf48ffb8877771f4d60b4b
Autor:
Dongyeol Ju, Sungjun Kim
Publikováno v:
iScience, Vol 27, Iss 8, Pp 110479- (2024)
Summary: The rise of neuromorphic systems has addressed the shortcomings of current computing architectures, especially regarding energy efficiency and scalability. These systems use cutting-edge technologies such as Pt/SnOx/TiN memristors, which eff
Externí odkaz:
https://doaj.org/article/46a35e4890ba44a49ff63b064e784192
Publikováno v:
APL Materials, Vol 12, Iss 7, Pp 071121-071121-13 (2024)
The implementation of reservoir computing using resistive random-access memory as a physical reservoir has attracted attention due to its low training cost and high energy efficiency during parallel data processing. In this work, a NbOx/Al2O3-based m
Externí odkaz:
https://doaj.org/article/03fcdde42feb4460b59ae15a160db887
Autor:
Dongyeol Ju, Sungjun Kim
Publikováno v:
Results in Physics, Vol 61, Iss , Pp 107796- (2024)
The exponential growth of data in our society following the fourth industrial revolution has exposed the limitations of existing technologies. The current computing architecture struggles to process efficiently the immense volume of data generated ev
Externí odkaz:
https://doaj.org/article/55795544b9d7488294ee33bf2bd0a857
Publikováno v:
Materials, Vol 17, Iss 2, p 481 (2024)
In this study, we present the resistive switching characteristics and the emulation of a biological synapse using the ITO/IGZO/TaN device. The device demonstrates efficient energy consumption, featuring low current resistive switching with minimal se
Externí odkaz:
https://doaj.org/article/d9ee310b1cbd4051bd896559f8089dae
Publikováno v:
Materials, Vol 16, Iss 23, p 7324 (2023)
This paper investigates the bipolar resistive switching and synaptic characteristics of IZO single-layer and IZO/SiO2 bilayer two-terminal memory devices. The chemical properties and structure of the device with a SiO2 layer are confirmed by x-ray ph
Externí odkaz:
https://doaj.org/article/11d8b1f1b46841899e1456b8c5cf3178
Publikováno v:
Nanomaterials, Vol 13, Iss 21, p 2859 (2023)
In this study, we investigate the electrical properties of ITO/ZrOx/TaN RRAM devices for neuromorphic computing applications. The thickness and material composition of the device are analyzed using transmission electron microscopy. Additionally, the
Externí odkaz:
https://doaj.org/article/85d1425d85b34dd6846dce072015eff4
Publikováno v:
Nanomaterials, Vol 13, Iss 21, p 2856 (2023)
This study discusses the potential application of ITO/ZnO/HfOx/W bilayer-structured memory devices in neuromorphic systems. These devices exhibit uniform resistive switching characteristics and demonstrate favorable endurance (>102) and stable retent
Externí odkaz:
https://doaj.org/article/6b43a4dd3ed544879e5db07b07e32e8d
Publikováno v:
Mathematics, Vol 11, Iss 20, p 4325 (2023)
As one of the solutions to overcome the current problems of computing systems, a resistive switching device, the TiN/TaOx/fluorine-doped tin oxide (FTO) stacked device, was fabricated to investigate its capability in embodying neuromorphic computing.
Externí odkaz:
https://doaj.org/article/ba57680467014706be733091e5b14cc7
Publikováno v:
Materials, Vol 16, Iss 20, p 6698 (2023)
The von Neumann architecture has faced challenges requiring high-fulfillment levels due to the performance gap between its processor and memory. Among the numerous resistive-switching random-access memories, the properties of hexagonal boron nitride
Externí odkaz:
https://doaj.org/article/e854ca03871b41998c139efcf04780d7