Zobrazeno 1 - 10
of 20
pro vyhledávání: '"Dongxun Yang"'
Publikováno v:
Light: Science & Applications, Vol 11, Iss 1, Pp 1-12 (2022)
In this paper, the THz emission properties from Si wafers with different surface conditions and doping conditions have been concluded, which show the potential application of LTEM on surface estimation
Externí odkaz:
https://doaj.org/article/43e83e6a9244437b8405c870949eda45
Publikováno v:
Journal of Materials Science: Materials in Electronics. 33:17249-17257
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ca474e4fcee1f21d5d4983c60f85b63b
https://doi.org/10.1007/s10854-022-08601-2
https://doi.org/10.1007/s10854-022-08601-2
Publikováno v:
Bulletin of Materials Science. 46
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1f6867ef3d38a126361b3fc9e95f1fdf
https://doi.org/10.1007/s12034-023-02903-9
https://doi.org/10.1007/s12034-023-02903-9
Autor:
Dongxun Yang, Masayoshi Tonouchi
Publikováno v:
Terahertz Emitters, Receivers, and Applications XIII.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::55029a8bc93f34e8f3a19dd22b15fc67
https://doi.org/10.1117/12.2632893
https://doi.org/10.1117/12.2632893
Autor:
Dongxun Yang, Masayoshi Tonouchi
Publikováno v:
2022 47th International Conference on Infrared, Millimeter and Terahertz Waves (IRMMW-THz).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7894b5217d85807aa08c4bd1fb9efd82
https://doi.org/10.1109/irmmw-thz50927.2022.9896119
https://doi.org/10.1109/irmmw-thz50927.2022.9896119
Publikováno v:
Applied Physics Letters. 122:041601
This study conducted laser-induced terahertz emission spectroscopy on a VO2/Si heterojunction. Consequently, rapid estimation of the local interface potential was realized and the work function of VO2 was obtained as 5.17–5.25 eV with increasing te
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fa999b528705bd845ca71fbd462bf64e
https://doi.org/10.1063/5.0136610
https://doi.org/10.1063/5.0136610
Autor:
Danni Hao, Yi Zhang, Dongxun Yang, Rui Li, Dan Zhao, Zhenzhen Zhang, Shuai Wang, Wei Jin, Hao Tian, Jiaying Duan, Fei Fan, Shengjiang Chang, Ramiro Maro, Lei Ma
Publikováno v:
Optics Letters. 47:6101
An all-nonmetal metamaterial (ANM) terahertz device with a silicon bowtie structure has been developed, which has comparable efficiency to that of its metallic counterparts, and better compatibility with modern semiconductor fabrication processes. Mo
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a90a873794ab21d4dd37721264047232
https://doi.org/10.1364/ol.471704
https://doi.org/10.1364/ol.471704
Autor:
Masayoshi Tonouchi, Dongxun Yang
Publikováno v:
Journal of Applied Physics. 130:055701
Metal–insulator–semiconductor (MIS) is an essential structure in semiconductor devices. Owing to the increasingly complex development of semiconductor devices, the local information of MIS, such as passivation, defects, and transient carrier dyna
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::31434e7b739a64d18868b73a3ad558b8
https://doi.org/10.1063/5.0055671
https://doi.org/10.1063/5.0055671
Publikováno v:
Materials Research Express. 6:125902
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::302c8cf3e439567cc68b35dbeb90958a
https://doi.org/10.1088/2053-1591/ab55b4
https://doi.org/10.1088/2053-1591/ab55b4
Autor:
Yang, Dongxun1 (AUTHOR), Laarman, Jesse Henri2 (AUTHOR) jesselaarman@gmail.com, Tonouchi, Masayoshi1 (AUTHOR) tonouchi.masayoshi.ile@osaka-u.ac.jp
Publikováno v:
Materials (1996-1944). Apr2024, Vol. 17 Issue 7, p1497. 13p.