Zobrazeno 1 - 10
of 104
pro vyhledávání: '"Dongxing Zheng"'
Autor:
Mengqi Zhao, Aitian Chen, Pei-Yuan Huang, Chen Liu, Laichuan Shen, Jiahao Liu, Le Zhao, Bin Fang, Wen-Cheng Yue, Dongxing Zheng, Ledong Wang, Hao Bai, Ka Shen, Yan Zhou, Shasha Wang, Enlong Liu, Shikun He, Yong-Lei Wang, Xixiang Zhang, Wanjun Jiang
Publikováno v:
npj Quantum Materials, Vol 9, Iss 1, Pp 1-7 (2024)
Abstract Magnetic skyrmions are topological spin textures that are regarded as promising information carriers for next-generation spintronic memory and computing devices. For practical applications, their deterministic generation, manipulation, and e
Externí odkaz:
https://doaj.org/article/60747ac8b9934dd8a277717c444c8dbe
Autor:
Yan Li, Zhitao Zhang, Chen Liu, Dongxing Zheng, Bin Fang, Chenhui Zhang, Aitian Chen, Yinchang Ma, Chunmei Wang, Haoliang Liu, Ka Shen, Aurélien Manchon, John Q. Xiao, Ziqiang Qiu, Can-Ming Hu, Xixiang Zhang
Publikováno v:
Nature Communications, Vol 15, Iss 1, Pp 1-8 (2024)
Abstract Coherent spin waves possess immense potential in wave-based information computation, storage, and transmission with high fidelity and ultra-low energy consumption. However, despite their seminal importance for magnonic devices, there is a pa
Externí odkaz:
https://doaj.org/article/4e7c769f963a4c85abe54f0e7c48d6a4
Autor:
Yinchang Ma, Yuan Yan, Linqu Luo, Sebastian Pazos, Chenhui Zhang, Xiang Lv, Maolin Chen, Chen Liu, Yizhou Wang, Aitian Chen, Yan Li, Dongxing Zheng, Rongyu Lin, Hanin Algaidi, Minglei Sun, Jefferson Zhe Liu, Shaobo Tu, Husam N. Alshareef, Cheng Gong, Mario Lanza, Fei Xue, Xixiang Zhang
Publikováno v:
Nature Communications, Vol 14, Iss 1, Pp 1-11 (2023)
Abstract Layered thio- and seleno-phosphate ferroelectrics, such as CuInP2S6, are promising building blocks for next-generation nonvolatile memory devices. However, because of the low Curie point, the CuInP2S6-based memory devices suffer from poor th
Externí odkaz:
https://doaj.org/article/b13f4d1bcf104a229532b64af0f695b4
Autor:
Hanin Algaidi, Chenhui Zhang, Yinchang Ma, Chen Liu, Aitian Chen, Dongxing Zheng, Xixiang Zhang
Publikováno v:
APL Materials, Vol 12, Iss 1, Pp 011124-011124-8 (2024)
Fe3GaTe2 is a promising van der Waals material for future spintronic applications because of its intrinsic above-room-temperature ferromagnetism. Herein, high quality Fe3GaTe2 single crystals were successfully grown by the chemical vapor transport me
Externí odkaz:
https://doaj.org/article/640919c675e4483c9a003d54da7f2b81
Autor:
Chen Liu, Jiawei Jiang, Chenhui Zhang, Qingping Wang, Huai Zhang, Dongxing Zheng, Yan Li, Yinchang Ma, Hanin Algaidi, Xingsen Gao, Zhipeng Hou, Wenbo Mi, Jun‐ming Liu, Ziqiang Qiu, Xixiang Zhang
Publikováno v:
Advanced Science, Vol 10, Iss 27, Pp n/a-n/a (2023)
Abstract The van der Waals (vdW) ferromagnet Fe3‐δGeTe2 has garnered significant research interest as a platform for skyrmionic spin configurations, that is, skyrmions and skyrmionic bubbles. However, despite extensive efforts, the origin of the D
Externí odkaz:
https://doaj.org/article/8b2f8d76bcee4b1fa943b4af8837ad6d
Autor:
Fei Xue, Xin He, Yinchang Ma, Dongxing Zheng, Chenhui Zhang, Lain-Jong Li, Jr-Hau He, Bin Yu, Xixiang Zhang
Publikováno v:
Nature Communications, Vol 12, Iss 1, Pp 1-8 (2021)
The mechanism of ferroelectric resistance switching is still under debate. Here, the authors propose an interfacial engineering approach to demonstrate its origin and find that it is governed by three independent variables: polarization, barrier chan
Externí odkaz:
https://doaj.org/article/385810f347f6474da8dc7d71312530d7
Autor:
Yi Chen, Na Wang, Jingjing Jiang, Wei Yuan, Zhijun Wang, Tong Zhao, Hongsong Zhang, Guohui Fan, Dongxing Zheng
Publikováno v:
BMJ Open, Vol 12, Iss 4 (2022)
Objectives To investigate the effect of metformin on the decreased risk of developing age-related macular degeneration (AMD) in patients with type 2 diabetes mellitus (T2DM) for ≥10 years.Design A retrospective study.Participants Patients aged ≥5
Externí odkaz:
https://doaj.org/article/2bea2e2234514a76aa26a78bed49f49e
Autor:
Qianqian Yang, Jingcong Hu, Yue-Wen Fang, Yueyang Jia, Rui Yang, Shiqing Deng, Yue Lu, Oswaldo Dieguez, Longlong Fan, Dongxing Zheng, Xixiang Zhang, Yongqi Dong, Zhenlin Luo, Zhen Wang, Huanhua Wang, Manling Sui, Xianran Xing, Jun Chen, Jianjun Tian, Linxing Zhang
Publikováno v:
Science. 379:1218-1224
Atomic-scale ferroelectrics are of great interest for high-density electronics, particularly field-effect transistors, low-power logic, and nonvolatile memories. We devised a film with a layered structure of bismuth oxide that can stabilize the ferro
Publikováno v:
ACS Applied Materials & Interfaces. 15:9649-9655
Autor:
Hanin Algaidi, Chenhui Zhang, Chen Liu, Dongxing Zheng, Yinchang Ma, Youyou Yuan, Xixiang Zhang
Publikováno v:
Physical Review B. 107