Zobrazeno 1 - 10
of 190
pro vyhledávání: '"Dongxia Shi"'
Autor:
Zhiheng Huang, Yunfei Bai, Yanchong Zhao, Le Liu, Xuan Zhao, Jiangbin Wu, Kenji Watanabe, Takashi Taniguchi, Wei Yang, Dongxia Shi, Yang Xu, Tiantian Zhang, Qingming Zhang, Ping-Heng Tan, Zhipei Sun, Sheng Meng, Yaxian Wang, Luojun Du, Guangyu Zhang
Publikováno v:
Nature Communications, Vol 15, Iss 1, Pp 1-9 (2024)
Abstract Stark effect, the electric-field analogue of magnetic Zeeman effect, is one of the celebrated phenomena in modern physics and appealing for emergent applications in electronics, optoelectronics, as well as quantum technologies. While in cond
Externí odkaz:
https://doaj.org/article/c788f889cc0d443f8dfcdaac3c11333c
Autor:
Lu Li, Qinqin Wang, Fanfan Wu, Qiaoling Xu, Jinpeng Tian, Zhiheng Huang, Qinghe Wang, Xuan Zhao, Qinghua Zhang, Qinkai Fan, Xiuzhen Li, Yalin Peng, Yangkun Zhang, Kunshan Ji, Aomiao Zhi, Huacong Sun, Mingtong Zhu, Jundong Zhu, Nianpeng Lu, Ying Lu, Shuopei Wang, Xuedong Bai, Yang Xu, Wei Yang, Na Li, Dongxia Shi, Lede Xian, Kaihui Liu, Luojun Du, Guangyu Zhang
Publikováno v:
Nature Communications, Vol 15, Iss 1, Pp 1-9 (2024)
Abstract Monolayer molybdenum disulfide (MoS2), an emergent two-dimensional (2D) semiconductor, holds great promise for transcending the fundamental limits of silicon electronics and continue the downscaling of field-effect transistors. To realize it
Externí odkaz:
https://doaj.org/article/051f09065d60480494db1821fbf238cd
Autor:
Xiaozhou Zan, Xiangdong Guo, Aolin Deng, Zhiheng Huang, Le Liu, Fanfan Wu, Yalong Yuan, Jiaojiao Zhao, Yalin Peng, Lu Li, Yangkun Zhang, Xiuzhen Li, Jundong Zhu, Jingwei Dong, Dongxia Shi, Wei Yang, Xiaoxia Yang, Zhiwen Shi, Luojun Du, Qing Dai, Guangyu Zhang
Publikováno v:
Nature Communications, Vol 15, Iss 1, Pp 1-6 (2024)
Abstract Stacking order plays a crucial role in determining the crystal symmetry and has significant impacts on electronic, optical, magnetic, and topological properties. Electron-phonon coupling, which is central to a wide range of intriguing quantu
Externí odkaz:
https://doaj.org/article/dc8fd29d7f704609966fff30c14e2cad
Autor:
Jian Tang, Qinqin Wang, Jinpeng Tian, Xiaomei Li, Na Li, Yalin Peng, Xiuzhen Li, Yanchong Zhao, Congli He, Shuyu Wu, Jiawei Li, Yutuo Guo, Biying Huang, Yanbang Chu, Yiru Ji, Dashan Shang, Luojun Du, Rong Yang, Wei Yang, Xuedong Bai, Dongxia Shi, Guangyu Zhang
Publikováno v:
Nature Communications, Vol 14, Iss 1, Pp 1-8 (2023)
Abstract Monolayer molybdenum disulfide (ML-MoS2) is an emergent two-dimensional (2D) semiconductor holding potential for flexible integrated circuits (ICs). The most important demands for the application of such ML-MoS2 ICs are low power consumption
Externí odkaz:
https://doaj.org/article/0503ef326b1f4452b7aa777b0bd7ab13
Publikováno v:
AIP Advances, Vol 13, Iss 11, Pp 110701-110701-16 (2023)
MS2 (M = Mo; W), with natural atomic thickness, are typical two-dimensional (2D) semiconductor materials, which have excellent electronic/optoelectronic properties and mechanical flexible properties. With the development of semiconductor device minia
Externí odkaz:
https://doaj.org/article/0a910a277f57495dbec5f52f0f20c449
Autor:
Le Liu, Shihao Zhang, Yanbang Chu, Cheng Shen, Yuan Huang, Yalong Yuan, Jinpeng Tian, Jian Tang, Yiru Ji, Rong Yang, Kenji Watanabe, Takashi Taniguchi, Dongxia Shi, Jianpeng Liu, Wei Yang, Guangyu Zhang
Publikováno v:
Nature Communications, Vol 13, Iss 1, Pp 1-7 (2022)
Previous studies of twisted double bilayer graphene have been limited to AB-AB stacking, featuring spin-polarized correlated insulators. Here, the authors fabricate AB-BA devices and report a competition between spin and valley polarization, along wi
Externí odkaz:
https://doaj.org/article/0ee61df7c5da4001b811e067476b937e
Autor:
Le Liu, Xin Lu, Yanbang Chu, Guang Yang, Yalong Yuan, Fanfan Wu, Yiru Ji, Jinpeng Tian, Kenji Watanabe, Takashi Taniguchi, Luojun Du, Dongxia Shi, Jianpeng Liu, Jie Shen, Li Lu, Wei Yang, Guangyu Zhang
Publikováno v:
Physical Review X, Vol 13, Iss 3, p 031015 (2023)
Twisted graphene multilayers are highly tunable flatband systems for developing new phases of matter. Thus far, while orbital ferromagnetism has been observed in valley-polarized phases, the long-range orders of other correlated phases as well as the
Externí odkaz:
https://doaj.org/article/55035e8b349c4498a2fae9c8e36b689e
Autor:
Jiawei Li, Shuopei Wang, Lu Li, Zheng Wei, Qinqin Wang, Huacong Sun, Jinpeng Tian, Yutuo Guo, Jieying Liu, Hua Yu, Na Li, Gen Long, Xuedong Bai, Wei Yang, Rong Yang, Dongxia Shi, Guangyu Zhang
Publikováno v:
Small Science, Vol 2, Iss 11, Pp n/a-n/a (2022)
2D semiconducting transition metal dichalcogenides (TMDs) are considered promising building blocks for emergent electronic and optoelectronic devices. As one of the representatives of 2D semiconductors, monolayer MoSe2 has excellent electrical and op
Externí odkaz:
https://doaj.org/article/3c9cf20805934a03aaae5f702a134cf3
Autor:
Mengzhou Liao, Zheng Wei, Luojun Du, Qinqin Wang, Jian Tang, Hua Yu, Fanfan Wu, Jiaojiao Zhao, Xiaozhi Xu, Bo Han, Kaihui Liu, Peng Gao, Tomas Polcar, Zhipei Sun, Dongxia Shi, Rong Yang, Guangyu Zhang
Publikováno v:
Nature Communications, Vol 11, Iss 1, Pp 1-8 (2020)
Interlayer twist angle between vertically stacked 2D material layers can trigger exciting fundamental physics. Here, the authors report precise control of interlayer twist angle of stacked centimeter scale multilayer MoS2 homostructures that enables
Externí odkaz:
https://doaj.org/article/0b32e7fcda834593bb21b07fc513db52
Autor:
Jianqi Zhu, Zhi-Chang Wang, Huijia Dai, Qinqin Wang, Rong Yang, Hua Yu, Mengzhou Liao, Jing Zhang, Wei Chen, Zheng Wei, Na Li, Luojun Du, Dongxia Shi, Wenlong Wang, Lixin Zhang, Ying Jiang, Guangyu Zhang
Publikováno v:
Nature Communications, Vol 10, Iss 1, Pp 1-7 (2019)
While water-splitting electrocatalysts enable energy storage in carbon-neutral fuels, a recent challenge has been the discovery and understanding of catalyst active sites. Here, authors find domain boundaries in MoS2 materials to present high-activit
Externí odkaz:
https://doaj.org/article/5bf11ce431704ddda49d35d094095098