Zobrazeno 1 - 10
of 10
pro vyhledávání: '"Dongwha Lee"'
Autor:
Hong Jeon Kang, Jeong Hyun Moon, Wook Bahng, Suhyeong Lee, Hyunwoo Kim, Sang-Mo Koo, Dohyun Lee, Dongwha Lee, Hoon-Young Cho, Jaeyeong Heo, Hyeong Joon Kim
Publikováno v:
Journal of Applied Physics; 2017, Vol. 122 Issue 9, p1-6, 6p, 1 Black and White Photograph, 1 Diagram, 2 Charts, 6 Graphs
Autor:
Tae Kyu Ahn, Jucheol Park, Jooho Lee, Ki-Hong Kim, Dongho Lee, Yonghui Lee, Jaehan Lee, Minsu Seol, Gabseok Seo, Dongwook Lee, Dong Wook Kwak, Seong Heon Kim, Mohammad Khaja Nazeeruddin, Sung Heo, Hoon Young Cho, Dongwha Lee
Publikováno v:
ACS Energy Letters. 2:1705-1710
The presence of voids in perovskite solar cells influences the efficiency because of accelerated charge recombination. The induced electric field near voids due to band bending attracts photogenerated electrons and holes toward the voids, leading to
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::545642181493b0fd8503c76680ab536f
https://doi.org/10.1021/acsenergylett.7b00484
https://doi.org/10.1021/acsenergylett.7b00484
Autor:
Ki-Hong Kim, Sung Heo, Young-Nam Kwon, Hoon Young Cho, Gyeong Su Park, Yong Koo Kyoung, Jae Cheol Lee, Dongwha Lee, Dahlang Tahir, JaeGwan Chung, Hee Jae Kang, J.S. Oh
Publikováno v:
Thin Solid Films. 616:456-460
We investigated the relationship between band alignments and threshold voltage shifts of GaInZnO (GIZO) thin films grown on SiO2/p++-Si by the RF sputtering method via utilizing X-ray photoelectron spectroscopy and reflection electron energy loss spe
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::841d9447b4ec2cfbab064733d36a0e2e
https://doi.org/10.1016/j.tsf.2016.09.005
https://doi.org/10.1016/j.tsf.2016.09.005
Autor:
Dong Wook Kwak, Tae-won Song, Hoon Young Cho, Seong Heon Kim, J.S. Oh, JaeGwan Chung, Hyung Ik Lee, Byoungdeog Choi, Dahlang Tahi, Dongwha Lee, Gyeong Su Park, Hee Jae Kang, Jae-Cheol Lee, Sung Heo, Ki-Hong Kim, Dong-Jin Yun
Publikováno v:
Surface and Interface Analysis. 48:1062-1065
The band alignment and defect states of GaInZnO thin films grown on SiO2/Si via radio frequency (RF) magnetron sputtering were investigated by using X-ray photoelectron spectroscopy, reflection electron energy loss spectroscopy, thermally stimulated
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::eb143cc90b3ba687f3bfec37cebed036
https://doi.org/10.1002/sia.6024
https://doi.org/10.1002/sia.6024
Publikováno v:
Thin Solid Films. 582:375-378
The behavior of deep level defects by a voltage-induced stress for CuInGaSe 2 (CIGS) solar cells has been investigated. CIGS solar cells were used with standard structures which are Al-doped ZnO/i-ZnO/CdS/CIGSe 2 /Mo on soda lime glass, and that resu
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3a38975d943b4b252090c4f1890c95b2
https://doi.org/10.1016/j.tsf.2014.11.021
https://doi.org/10.1016/j.tsf.2014.11.021
Autor:
Junggyu Nam, EunAe Cho, Hee Jae Kang, Jun-Ho Lee, Ki-Hong Kim, Byoungdeog Choi, Jong-Bong Park, Dongwha Lee, Jung Yup Yang, Dongho Lee, Gyeong Su Park, Pyungho Choi, Hoon Young Cho, Hyung-Ik Lee, Sung Heo, Seong Heon Kim, JaeGwan Chung, Jaehan Lee
Publikováno v:
SCIENTIFIC REPORTS(6)
Scientific Reports
Scientific Reports
Defect depth profiles of Cu (In1−x,Gax)(Se1−ySy)2 (CIGSS) were measured as functions of pulse width and voltage via deep-level transient spectroscopy (DLTS). Four defects were observed, i.e., electron traps of ~0.2 eV at 140 K (E1 trap) and 0.47
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::ab6e4e610cc316d237ad52d0bfd3b448
http://open-repository.kisti.re.kr/cube/handle/open_repository/476856.do
http://open-repository.kisti.re.kr/cube/handle/open_repository/476856.do
Publikováno v:
Thin Solid Films. 520:6382-6385
Hydrogen effects on deep level defects and a defect generation in proton implanted Cu(In,Ga)Se 2 (CIGS) based thin films for solar cell were investigated. CIGS films with a thickness of 3 μm were grown on a soda-lime glass substrate by a co-evaporat
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::083082e1d0fb68c55b866a94df10f130
https://doi.org/10.1016/j.tsf.2012.06.046
https://doi.org/10.1016/j.tsf.2012.06.046
Publikováno v:
Thin Solid Films. 520:5593-5596
SiGe-on-Insulator (SGOI) structures were created using the Ge condensation method, where an oxidation process is performed on the SiGe/Si structure. This method involves rapid thermal chemical vapor deposition and H + /He + ion-implantations. Deep le
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::75b2b353f93916eb5916326a4bb06910
https://doi.org/10.1016/j.tsf.2012.04.035
https://doi.org/10.1016/j.tsf.2012.04.035
Publikováno v:
2010 35th IEEE Photovoltaic Specialists Conference.
We demonstrated the electrical evolution of the AlO, AlN, and AlON and the nitrogen (N) effect on negative fixed charges, which is responsible for the reduced positive charge traps of Al 2 O 3 passivation films in crystalline Si solar cells. The AlO
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::77bf6165da9f75a001b21cb55d7604e2
https://doi.org/10.1109/pvsc.2010.5614520
https://doi.org/10.1109/pvsc.2010.5614520
Publikováno v:
2010 35th IEEE Photovoltaic Specialists Conference.
The suppression effect on deep level defects and the defect generation in Cu(InGa)Se2 solar cells by a proton implantation have been investigated using deep level transient spectroscopy(DLTS) and optical DLTS measurements. CIGS films with the thickne
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ea264600004b41a8b9f65de2ac6c81d9
https://doi.org/10.1109/pvsc.2010.5614235
https://doi.org/10.1109/pvsc.2010.5614235