Zobrazeno 1 - 10
of 28
pro vyhledávání: '"Dongwan Seo"'
Publikováno v:
ACS Applied Nano Materials. 4:2167-2174
With the pandemic crisis and long-lasting air pollution, reuse of disposable filtering masks has been prevalent while not being recommended. Different aerosol exposure conditions such as an extende...
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ce1cf13f0c54ea7e817e9396317133ad
https://doi.org/10.1021/acsanm.0c03477
https://doi.org/10.1021/acsanm.0c03477
Autor:
Kyeongeun Lee, Jooyoun Kim, Tahmineh Hemmatian, Eugene Song, Jehyung Yi, Seojin Jung, Dongwan Seo
Publikováno v:
Polymers
Volume 13
Issue 1
Polymers, Vol 13, Iss 45, p 45 (2021)
Volume 13
Issue 1
Polymers, Vol 13, Iss 45, p 45 (2021)
In the outbreak of COVID-19, the extended wear of single-use, disposable respirators was inevitable due to limited supplies. As a respirator is front-line protection against particulate matter, including bioaerosol and droplets, a comprehensive under
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::b83a862c197d55eb114c3e5afc18888b
Publikováno v:
Applied Surface Science. 399:523-534
Gallium antimonide (GaSb) and indium antimonide (InSb) have attracted strong attention as new channel materials for transistors due to their excellent electrical properties and lattice matches with various group III–V compound semiconductors. In th
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8a395998cb79c7f3e77e2d4205c9af34
https://doi.org/10.1016/j.apsusc.2016.12.114
https://doi.org/10.1016/j.apsusc.2016.12.114
Publikováno v:
Applied Surface Science. 371:129-138
Ge surfaces were etched by means of metal-assisted chemical etching (MaCE). The behavior of the MaCE reaction in diluted H 2 O 2 was compared with that of a conventional etchant of HF/H 2 O 2 /H 2 O mixture (FPM). Herein we first report that a pyrami
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::95cfa08744da41915590e7ef609c5320
https://doi.org/10.1016/j.apsusc.2016.02.197
https://doi.org/10.1016/j.apsusc.2016.02.197
Publikováno v:
Science of Advanced Materials. 8:817-824
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6fbdbc47a0fdb40ea9f1627be67a9bfb
https://doi.org/10.1166/sam.2016.2650
https://doi.org/10.1166/sam.2016.2650
Publikováno v:
The Journal of Physical Chemistry C. 119:24774-24780
Gallium antimonide (GaSb) has an extremely high electron mobility and an excellent lattice match with various III–V ternary and quaternary compounds. In this study, the effect of wet-etching processes on the GaSb (001) surface was investigated, wit
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::32f33fe021f675123c9fff4741b6e28d
https://doi.org/10.1021/acs.jpcc.5b04250
https://doi.org/10.1021/acs.jpcc.5b04250
Publikováno v:
Thin Solid Films. 591:289-294
In the solution-based preparation of CZTS (Cu 2 ZnSnS 4 ) thin films followed by a sulfurization process, a layer of MoS 2 is formed at the CZTS–Mo interface. Formation of this MoS 2 layer is mainly governed by the sulfurization process in H 2 S am
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::861d7e0664ae3c1c3be1f8f29d9b544c
https://doi.org/10.1016/j.tsf.2015.05.060
https://doi.org/10.1016/j.tsf.2015.05.060
Publikováno v:
Applied Surface Science. 311:831-836
Introduction of a MoSi-based phase shift mask (PSM) improves photolithography resolution by causing light to shift phase by 180° thus canceling the overlap. However, when MoSiON PSM was exposed to an ArF excimer laser ( λ = 193 nm), a significant i
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3eda594477745131e49fb07b049b75ba
https://doi.org/10.1016/j.apsusc.2014.05.174
https://doi.org/10.1016/j.apsusc.2014.05.174
Publikováno v:
Journal of Materials Science: Materials in Electronics. 25:3420-3426
Cu2ZnSnS4 (CZTS) absorber layers were prepared from copper acetate, zinc acetate, tin chloride, and thiourea in a solution of methanol, ethylenediamine, and ethanolamine using a sol–gel spin-coating method. Sol–gel precursor solutions were prepar
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::83776311348f6335331436b4ff89afca
https://doi.org/10.1007/s10854-014-2034-8
https://doi.org/10.1007/s10854-014-2034-8
Publikováno v:
Microelectronic Engineering. 118:66-71
Various additives were added to H"3PO"4 in order to achieve a highly selective wet etching of Si"3N"4 to SiO"2. Fluoride compounds such as HF, NH"4F, and NH"4HF"2 were added to the H"3PO"4 in order to increase the etch rate of the Si"3N"4. In additio
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a3ad759c7acf94103aa1797d2a8e316c
https://doi.org/10.1016/j.mee.2013.12.027
https://doi.org/10.1016/j.mee.2013.12.027