Zobrazeno 1 - 10
of 19
pro vyhledávání: '"Dongsoo Jang"'
Autor:
Dongsoo Jang, Chulwoo Ahn, Youngjun Lee, Seungjun Lee, Hyunkyu Lee, Donghoi Kim, Yongsun Kim, Ji‐Yong Park, Young‐Kyun Kwon, Jaewu Choi, Chinkyo Kim
Publikováno v:
Advanced Materials Interfaces, Vol 10, Iss 4, Pp n/a-n/a (2023)
Abstract Controllable growth and facile transferability of a crystalline film with desired characteristics, acquired by tuning composition and crystallographic orientation, become highly demanded for advanced flexible devices. Here the desired crysta
Externí odkaz:
https://doaj.org/article/b98b5f3c5cb749c797a1e60f54ec382b
Publikováno v:
International Journal of Software Engineering and Knowledge Engineering. 33:23-53
Security services can keep a system from security breaches for a while, but they are ultimately compromised as the system is deployed and used. This paper describes the modeling of security fault-tolerant (SFT) requirements, which can tolerate the fa
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c436a3913ece3f5703701a01ae6b4ebd
https://doi.org/10.1142/s0218194022500644
https://doi.org/10.1142/s0218194022500644
Publikováno v:
Crystal Growth & Design. 22:6995-7007
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c5ee144959b4782d8a6117b5f5ffd87b
https://doi.org/10.1021/acs.cgd.2c00660
https://doi.org/10.1021/acs.cgd.2c00660
Publikováno v:
Crystal Growth & Design. 20:6198-6204
On an SiO2-patterned sapphire substrate, polarity-inverted lateral overgrowth produced N- and Ga-polar GaN on the opening regions and on the SiO2 mask regions, respectively. Ga-polar GaN was found ...
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0330686f2f99b586268513d9eca0dffc
https://doi.org/10.1021/acs.cgd.0c00923
https://doi.org/10.1021/acs.cgd.0c00923
Autor:
Dongsoo Jang, Chulwoo Ahn, Youngjun Lee, Seungjun Lee, Hyunkyu Lee, Donghoi Kim, Yongsun Kim, Ji‐Yong Park, Young‐Kyun Kwon, Jaewu Choi, Chinkyo Kim
Publikováno v:
Advanced Materials Interfaces. 10:2201406
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b8c5fb5e7660dd594e59c1b8d09c7444
https://doi.org/10.1002/admi.202201406
https://doi.org/10.1002/admi.202201406
Autor:
Hyunkyu Lee, Chulwoo Ahn, Chinkyo Kim, Young-Kyun Kwon, Youngjun Lee, Seungjun Lee, Donghoi Kim, Jaewu Choi, Dongsoo Jang
The remote epitaxy was originally proposed to grow a film, which is not in contact but crystallographically aligned with a substrate and easily detachable due to a van der Waals material as a space layer. Here we show that the claimed remote epitaxy
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::1c897540d585f5ff3f691263315f40ef
https://doi.org/10.21203/rs.3.rs-604787/v1
https://doi.org/10.21203/rs.3.rs-604787/v1
Autor:
Hyunkyu Lee, Jong-Hyurk Park, Nikhilesh Maity, Donghoi Kim, Dongsoo Jang, Chinkyo Kim, Young-Gui Yoon, Abhishek K. Singh, Yire Han, Soon-Gil Yoon
Publikováno v:
Materials Today Communications. 30:103113
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c4022b292a41890544d50600c761f408
https://doi.org/10.1016/j.mtcomm.2021.103113
https://doi.org/10.1016/j.mtcomm.2021.103113
Publikováno v:
ACSOS Companion
This paper describes an approach to the security fault tolerance of access control in which the security breaches of an access control are tolerated by means of a security fault tolerant (SFT) access control. Though an access control is securely desi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::cc61acbe670ad43cbf8e1ad15ad9270b
https://doi.org/10.1109/acsos-c51401.2020.00058
https://doi.org/10.1109/acsos-c51401.2020.00058
Publikováno v:
Journal of Applied Crystallography. 51:1551-1555
During epitaxial lateral overgrowth, the lateral polarity inversion of c-GaN domains from Ga to N polarity, triggered at the boundary of an SiO2 mask pattern, resulted in inversion domain boundaries (IDBs) forming preferentially on the \{11{\overline
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f6540aee0d8bf6c9c0bb5cd0585ff51a
https://doi.org/10.1107/s160057671801350x
https://doi.org/10.1107/s160057671801350x
Publikováno v:
Journal of Materials Chemistry C. 6:6264-6269
The polarity and threading dislocation dependence of the surface morphology of c-GaN films exposed to HCl vapor at temperatures of 750 and 810 °C was investigated. For N-polar GaN, some regions were severely etched in such a way that vertically-alig
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6a47138761ae82277d2692ed93d3666a
https://doi.org/10.1039/c8tc01640b
https://doi.org/10.1039/c8tc01640b