Zobrazeno 1 - 10
of 31
pro vyhledávání: '"Dongqi Zheng"'
Publikováno v:
Bangladesh Journal of Pharmacology, Vol 7, Iss 4 (2012)
Endophytic fungi (30) isolates from bamboo branches were categorized into 12 genera, based on the blast analyses of ITS nrDNA sequence in GenBank and microscopic examination. The aim of this work was to investigate the antibacterial and antifungal ac
Externí odkaz:
https://doaj.org/article/6cb77cacfd4e43a09fefb5b709075931
Publikováno v:
Shanghai Jiaotong Daxue xuebao, Vol 55, Iss S2, Pp 22-30 (2021)
In order to improve the power grid operation risk early warning and pre-control capabilities in typhoon and other disastrous climates, the historical fault features of power grid are extracted by utilizing the machine learning technology based on the
Externí odkaz:
https://doaj.org/article/c383be1e9913461d9988f038578d0701
Autor:
Pai-Ying Liao, Dongqi Zheng, Sami Alajlouni, Zhuocheng Zhang, Mengwei Si, Jie Zhang, Jian-Yu Lin, Tatyana I. Feygelson, Marko J. Tadjer, Ali Shakouri, Peide D. Ye
Publikováno v:
IEEE Transactions on Electron Devices. 70:2052-2058
Autor:
James P. Barnard, Robynne L. Paldi, Matias Kalaswad, Zihao He, Hongyi Dou, Yizhi Zhang, Jianan Shen, Dongqi Zheng, Neil R. Dilley, Raktim Sarma, Aleem M. Siddiqui, Peide D. Ye, Haiyan Wang
Publikováno v:
Crystal Growth & Design. 23:2248-2256
Publikováno v:
IEEE Electron Device Letters. 44:273-276
Publikováno v:
2023 International VLSI Symposium on Technology, Systems and Applications (VLSI-TSA/VLSI-DAT).
Publikováno v:
IEEE Transactions on Electron Devices. 69:851-856
Publikováno v:
2023 7th IEEE Electron Devices Technology & Manufacturing Conference (EDTM).
Autor:
Eunseon Yu, Mengwei Si, Dongqi Zheng, Amogh Agrawal, Minsuk Koo, Peide D. Ye, Kaushik Roy, Sumeet Kumar Gupta
Publikováno v:
IEEE Electron Device Letters. 42:1670-1673
Coupled-oscillatory networks are an emerging paradigm for efficiently solving optimization problems. In this work, we demonstrate the application of ferroelectric field-effect transistor (FeFET) for energy-efficient coupled-oscillatory networks. A CM
Autor:
Sami Alajlouni, Zehao Lin, Dongqi Zheng, Suman Datta, Joseph Andler, Peide D. Ye, Jinhyun Noh, Anna Murray, Junkang Li, Ali Shakouri, Chang Niu, Rakesh Agrawal, Xiao Lyu, Kerry Maize, Mengwei Si
Publikováno v:
IEEE Transactions on Electron Devices. 68:3195-3199
In this work, we report back-end-of-line (BEOL) compatible indium-tin-oxide (ITO) transistors with ferroelectric (FE) Hf0.5Zr0.5O2 (HZO) as gate insulator. A tunable high-density 2-D electron gas over 0.8 $\sf \times \,\,10^{14}$ /cm2 is achieved at