Zobrazeno 1 - 2
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pro vyhledávání: '"Dongmo PB"'
Autor:
Marko, IP, Batool, Z, Hild, K, Jin, SR, Hossain, N, Hosea, TJC, Sweeney, SJ, Petropoulos, JP, Zhong, Y, Dongmo, PB, Zide, JMO
Publikováno v:
Applied Physics Letters. 101:221108
Replacing small amounts of As with Bi in InGaBiAs/InP induces large decreases and increases in the bandgap, E, and spin-orbit splitting, Δ, respectively. The possibility of achieving Δ > E and a reduced temperature (T) dependence for E are signific
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::bf70781d23d9bb0a42acdfb29f67ee35
https://doi.org/10.1063/1.4768532
https://doi.org/10.1063/1.4768532
Autor:
Petropoulos JP; Department of Electrical and Computer Engineering, University of Delaware, Newark, DE 19716, USA., Cristiani TR, Dongmo PB, Zide JM
Publikováno v:
Nanotechnology [Nanotechnology] 2011 Jun 17; Vol. 22 (24), pp. 245704. Date of Electronic Publication: 2011 Apr 21.