Zobrazeno 1 - 10
of 29
pro vyhledávání: '"Dongmin Keum"'
Autor:
Dongmin Keum, Hyungtak Kim
Publikováno v:
Micromachines, Vol 10, Iss 11, p 723 (2019)
In this work, we investigated the time-dependent dielectric breakdown (TDDB) characteristics of normally-off AlGaN/GaN gate-recessed metal−insulator−semiconductor (MIS) heterostructure field effect transistors (HFETs) submitted to proton irradiat
Externí odkaz:
https://doaj.org/article/537a632ce48c489d8a7cf289dcfed481
Autor:
Hyungtak Kim, Dongmin Keum
Publikováno v:
JOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE. 19:214-219
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::dee120d96852bd0623eb03e21d922e19
https://doi.org/10.5573/jsts.2019.19.2.214
https://doi.org/10.5573/jsts.2019.19.2.214
Autor:
Dongmin Keum, Hyungtak Kim
Publikováno v:
Cryogenics. 93:51-55
We investigated the low-temperature operation of normally-off AlGaN/GaN heterostructure field-effect-transistors (HFETs) with gate-recessed metal-oxidesemiconductor (MOS) structure and normally-on Schottky-gate high-electron-mobility-transistors (HEM
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f36d48e2b46ab252202737010a17da3d
https://doi.org/10.1016/j.cryogenics.2018.05.009
https://doi.org/10.1016/j.cryogenics.2018.05.009
Autor:
Dongmin Keum, Hyungtak Kim
Publikováno v:
ECS Journal of Solid State Science and Technology. 7:Q159-Q163
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::481e85f6cc1cfb8b70803d4c1b2d39f1
https://doi.org/10.1149/2.0021809jss
https://doi.org/10.1149/2.0021809jss
Publikováno v:
ECS Journal of Solid State Science and Technology. 6:S3030-S3033
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6716ed5508a6a27d63e278a4d0f4c531
https://doi.org/10.1149/2.0071711jss
https://doi.org/10.1149/2.0071711jss
Publikováno v:
IEEE Transactions on Nuclear Science. 64:258-262
Proton irradiation at 5 MeV was performed on normally-off p-AlGaN gate AlGaN/GaN high electron mobility transistors (HEMTs). The increase of on-resistance and the degradation of subthreshold characteristics were observed after irradiation. The reduct
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::27b045d8d8937b0d9c2b80b4f810877c
https://doi.org/10.1109/tns.2016.2612227
https://doi.org/10.1109/tns.2016.2612227
Autor:
Daniel S. Jeon, Charles Soon Hong Hwang, Ki-Hun Jeong, Dongmin Keum, Kyung-Won Jang, Elke K. Buschbeck, Min H. Kim
Publikováno v:
Light, Science & Applications
Light: Science & Applications, Vol 7, Iss 1, Pp 1-7 (2018)
Light: Science & Applications, Vol 7, Iss 1, Pp 1-7 (2018)
Increased demand for compact devices leads to rapid development of miniaturized digital cameras. However, conventional camera modules contain multiple lenses along the optical axis to compensate for optical aberrations that introduce technical challe
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::aa3bd2149b527511e9e55ae7de613add
http://europepmc.org/articles/PMC6199290
http://europepmc.org/articles/PMC6199290
Publikováno v:
IEEE Transactions on Nuclear Science. 62:3362-3368
Proton irradiation at 5 MeV was performed on normally-off AlGaN/GaN metal-insulator-semiconductor heterostructure field effect transistors and normally-on Schottky high electron mobility transistors fabricated on the same GaN-on-Si wafer. The positiv
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5eae1eb6cc33f3ccf069aad126ab45eb
https://doi.org/10.1109/tns.2015.2495209
https://doi.org/10.1109/tns.2015.2495209
Publikováno v:
Electronics Letters. 52:661-663
Normally-off AlGaN/GaN metal-oxide-semiconductor heterostructure field effect transistors have been fabricated and characterised for non-volatile memory operation. 2 nm-thickness AlGaN barrier layer was obtained by gate recess process using inductive
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::804c532ff80d865054f515a80ba85ca9
https://doi.org/10.1049/el.2015.4258
https://doi.org/10.1049/el.2015.4258
Publikováno v:
JSTS:Journal of Semiconductor Technology and Science. 14:682-687
We have performed reverse gate bias stress tests on AlGaN/GaN-on-Si Heterostructure FETs (HFETs). The shift of threshold voltage (Vth) and the reduction of on-current were observed from the stressed devices. These changes of the device parameters wer
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e014a06bae705addb60d80b71261ab92
https://doi.org/10.5573/jsts.2014.14.5.682
https://doi.org/10.5573/jsts.2014.14.5.682