Zobrazeno 1 - 10
of 81
pro vyhledávání: '"Dongke Li"'
Publikováno v:
IEEE Access, Vol 12, Pp 157455-157465 (2024)
Considering the influence of process complexity, resource tension, human complexity and external influence on the buffer size, and the relay potential effect of mutual cooperation and cross-construction among processes, a calculation model of critica
Externí odkaz:
https://doaj.org/article/b2192a6385af4284bb4902e2eb294682
Publikováno v:
APL Machine Learning, Vol 1, Iss 3, Pp 031501-031501-17 (2023)
Neuromorphic visual systems that integrate the functionalities of sensing, memory, and processing are expected to overcome the shortcomings of conventional artificial visual systems, such as data redundancy, data access delay, and high-energy consump
Externí odkaz:
https://doaj.org/article/2b72aa7c6e6d4c0cbdfe755fe0a0b46f
Autor:
Teng Sun, Dongke Li, Jiaming Chen, Yuhao Wang, Junnan Han, Ting Zhu, Wei Li, Jun Xu, Kunji Chen
Publikováno v:
Nanomaterials, Vol 13, Iss 6, p 1109 (2023)
Developing high-performance Si-based light-emitting devices is the key step to realizing all-Si-based optical telecommunication. Usually, silica (SiO2) as the host matrix is used to passivate silicon nanocrystals, and a strong quantum confinement eff
Externí odkaz:
https://doaj.org/article/4d230d197e1349fca2730af37682db30
Publikováno v:
Nanoscale Research Letters, Vol 15, Iss 1, Pp 1-7 (2020)
Abstract Acquiring the optimum growth conditions of Ti-Al-N films, the effects of gas atmosphere, especially the reactive plasma on the material microstructures, and mechanical properties are still a fundamental and important issue. In this study, Ti
Externí odkaz:
https://doaj.org/article/bf3f7440f8ee430588798797ff747190
Publikováno v:
Materials, Vol 15, Iss 20, p 7339 (2022)
Ga2O3 has emerged as a promising ultrawide bandgap semiconductor for numerous device applications owing to its excellent material properties. In this paper, we present a comprehensive review on major advances achieved over the past thirty years in th
Externí odkaz:
https://doaj.org/article/c23e260bb8f44320a7f7f17f828f66fd
Publikováno v:
AIP Advances, Vol 9, Iss 2, Pp 025213-025213-6 (2019)
Phosphorus-doped Si nanocrystals embedded in amorphous SiC (Si NCs:SiC) films were fabricated by annealing phosphorus-doped Si-rich amorphous SiC materials at 900°C to get n-type Si NCs/p-Si heterojunction for photovoltaic device applications. The f
Externí odkaz:
https://doaj.org/article/370a0ebe904f46eaa651e6c316819a07
Publikováno v:
Energies, Vol 13, Iss 18, p 4845 (2020)
Recently, extensive studies have focused on exploring a variety of silicon (Si) nanostructures among which Si quantum dots (Si QDs) may be applied in all Si tandem solar cells (TSCs) for the time to come. By virtue of its size tunability, the optical
Externí odkaz:
https://doaj.org/article/2a4e9fb068fa4a7f869203298fbb8375
Autor:
Kun Zhou, Hao Sun, Yajing Liu, Qian Wang, Bin Liu, Dongke Li, Hongming Zhao, Ran Tao, Xiaoxing Fan
Publikováno v:
Catalysis Science & Technology. 13:490-503
Direct Z-scheme CeO2/Cr2O3 with oxygen vacancies is successfully prepared. The photothermal synergy in direct Z-scheme CeO2/Cr2O3 could improve the nitrogen fixation and isopropanol degradation activities.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::069c1ce811d23898043416d1723e4a64
https://doi.org/10.1039/d2cy01832b
https://doi.org/10.1039/d2cy01832b
Autor:
Dongke Li, Jiaming Chen, Zhaoguo Xue, Teng Sun, Junnan Han, Wanghua Chen, Etienne Talbot, Rémi Demoulin, Wei Li, Jun Xu, Kunji Chen
Publikováno v:
Applied Surface Science
Applied Surface Science, 2023, 609, pp.155260. ⟨10.1016/j.apsusc.2022.155260⟩
Applied Surface Science, 2023, 609, pp.155260. ⟨10.1016/j.apsusc.2022.155260⟩
International audience; Understanding the distributions and behaviors of dopants in Si nanocrystal are the primary and necessary issues to realize the controllable doping at nanoscale and develop the next generation of optoelectronic devices. This wo
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::8f7c04418e56c2980b6b4cc4cd53a0db
https://normandie-univ.hal.science/hal-03853769/document
https://normandie-univ.hal.science/hal-03853769/document
Autor:
Dongke Li, Junnan Han, Teng Sun, Jiaming Chen, Etienne Talbot, Rémi Demoulin, Wanghua Chen, Xiaodong Pi, Jun Xu, Kunji Chen
Doping in Si nanocrystals is an interesting topic and to directly study the dopants distribution in phosphorous/boron co-doping circumstance is one of the important issue nowadays. In this study, atom probe tomography is performed to study the struct
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::d67b18cb596d4e1b9a44ac001bd592f2
https://doi.org/10.2139/ssrn.4348342
https://doi.org/10.2139/ssrn.4348342