Zobrazeno 1 - 8
of 8
pro vyhledávání: '"Dongjoo, Bae"'
Publikováno v:
In Ceramics International 15 July 2022 48(14):20478-20484
Publikováno v:
IEEE Access, Vol 10, Pp 6622-6628 (2022)
Charge-trap based resistive switching (RS) has attracted attention in the resistive random-access memory (RRAM) industry due to its gradual RS behavior for multi-level and synaptic applications. In this work, in order to lower the operating current l
Externí odkaz:
https://doaj.org/article/c4d522749f6f4876989295683a9c1cb9
Autor:
Doowon Lee, Jinsu Jung, Kyeong Heon Kim, Dongjoo Bae, Myoungsu Chae, Sungho Kim, Hee-dong Kim
Publikováno v:
ACS Sensors. 7:2567-2576
Oxygen (O
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::91ea820ae1bcf4f7be7babd595a910ad
https://doi.org/10.1021/acssensors.2c00484
https://doi.org/10.1021/acssensors.2c00484
Publikováno v:
Journal of the Korean Physical Society. 80:1065-1070
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e2134f8190a80c8e0ee9ab4abc2e4ec0
https://doi.org/10.1007/s40042-022-00470-6
https://doi.org/10.1007/s40042-022-00470-6
Publikováno v:
IEEE Access, Vol 10, Pp 6622-6628 (2022)
Charge-trap based resistive switching (RS) has attracted attention in the resistive random-access memory (RRAM) industry due to its gradual RS behavior for multi-level and synaptic applications. In this work, in order to lower the operating current l
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::8b27c5d5308cc29a8fae7ddc96d9b8a0
https://ieeexplore.ieee.org/document/9678317/
https://ieeexplore.ieee.org/document/9678317/
Publikováno v:
Ceramics International. 47:21943-21949
In this study, we present a self-rectifying resistive switching property observed in Ti/Zr3N2/p-Si and Ti/Zr2N/p-Si metal-insulator-semiconductor (MIS) capacitors for array applications. Compared to the Zr2N film, the Zr3N2 film has a higher trap den
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6452c6f1fbe12aa10931fc356f929b5c
https://doi.org/10.1016/j.ceramint.2021.04.212
https://doi.org/10.1016/j.ceramint.2021.04.212
Publikováno v:
Coatings, Vol 11, Iss 197, p 197 (2021)
Coatings
Volume 11
Issue 2
Coatings
Volume 11
Issue 2
In this work, we report the feasibility of resistive switching (RS) properties of oxygen-doped zirconium nitride (O-doped ZrN) films with platinum (Pt) and platinum silicide (PtSi) bottom electrode (BE), produced by a sputtering method. Compared to O
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::4446533687082ae8ef3ee22dc81d69ad
https://www.mdpi.com/2079-6412/11/2/197
https://www.mdpi.com/2079-6412/11/2/197
Publikováno v:
Applied Physics Letters. 118:112106
In this Letter, the self-rectifying resistive switching (RS) behavior is demonstrated in Ti/ZrN/Pt/p-Si resistive random access memory (RRAM) devices. Compared to an RS characteristic of the conventional Ti/ZrN/Pt structures, the memory cell with a p
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7e37c90e8a47057e4fd7fa0596057586
https://doi.org/10.1063/5.0036528
https://doi.org/10.1063/5.0036528