Zobrazeno 1 - 10
of 94
pro vyhledávání: '"Donggyu Yim"'
Publikováno v:
ACS Applied Materials & Interfaces. 12:36362-36369
Color centers in 2-dimensional hexagonal boron nitride (h-BN) have recently emerged as stable and bright single-photon emitters (SPEs) operating at room temperature. In this study, we combine theory and experiment to show that vacancy-based SPEs sele
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::33951ce16dd7aebb2b5593b844f4d112
https://doi.org/10.1021/acsami.0c09740
https://doi.org/10.1021/acsami.0c09740
Publikováno v:
ACS applied materialsinterfaces. 13(38)
Hexagonal boron nitride (h-BN) has been recently found to host a variety of quantum point defects, which are promising candidates as single-photon sources for solid-state quantum nanophotonic applications. Most recently, optically addressable spin qu
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::2a1875192195ff7fbe0323e2e5254206
https://pubmed.ncbi.nlm.nih.gov/34541839
https://pubmed.ncbi.nlm.nih.gov/34541839
Publikováno v:
2D Materials. 9:035020
Colour centres of hexagonal boron nitride (h-BN) have been discovered as promising and practical single photon sources due to their high brightness and narrow spectral linewidth at room-temperature. In order to realize h-BN based photonic quantum com
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::0ab2972878860abbda8ac0e3027b9210
https://doi.org/10.1088/2053-1583/ac75f4
https://doi.org/10.1088/2053-1583/ac75f4
Autor:
Joo Young Moon, Jong Chul Lee, Sung-Joo Hong, Jae-yeon Lee, Jong-Ho Lee, Byoung-Ki Lee, Byung Gu Gyun, Won Ki Ju, Kyung Wan Kim, Young Seok Ko, Donggyu Yim, Bo Mi Lee, Hyun Mi Hwang, Woo Young Park, Soo Gil Kim, Tae Jung Ha, Yong Taek Park
Publikováno v:
2017 IEEE International Electron Devices Meeting (IEDM).
In this paper, the authors report for the first time the outstanding selector performance from an innovative oxide selector. SiO2, one of conventional and common materials in semiconductor industry, was chosen as a matrix oxide material. Metal atoms
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::871d769d7375cb155052640f80c03ccf
https://doi.org/10.1109/iedm.2017.8268309
https://doi.org/10.1109/iedm.2017.8268309
Autor:
Sangheon Lee, Sangpyo Kim, Donggyu Yim, Hye-Keun Oh, Junhwan Lee, Sanghyun Ban, Ohyun Kim, Byung-Ho Nam
Publikováno v:
Journal of Nanoscience and Nanotechnology. 13:8032-8035
EUV mask absorber sidewall angle should be measured for mask Optical Proximity Correction and shadow effect estimation. Hence, verifying the three-dimensional profile of mask topography has become a challenge in EUV mask inspection. This paper evalua
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::0cd3169476156344493accd584e86fcb
https://doi.org/10.1166/jnn.2013.8170
https://doi.org/10.1166/jnn.2013.8170
Publikováno v:
SPIE Proceedings.
Controlling critical dimension (CD) of implant blocking layers during photolithography has been challenging due to reflection caused by wafer topography. Unexpected reflection which comes from wafer topography makes severe CD variation on mask patter
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::04af3d66e79693e6a8edd11ed16026e2
https://doi.org/10.1117/12.2219863
https://doi.org/10.1117/12.2219863
Publikováno v:
Journal of Photopolymer Science and Technology. 24:497-501
Contact hole patterning for half pitch 51nm can be achieved by single exposure for mass production and for half pitch 39nm can be achieved by Litho-Etch-Litho-Etch (LELE). Currently for half pitch 32nm there is no promising solution so far, but ouble
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::63b62af816e6ba850ad1a76c21d99f48
https://doi.org/10.2494/photopolymer.24.497
https://doi.org/10.2494/photopolymer.24.497
Publikováno v:
SPIE Proceedings.
Defect verification has become significantly difficult to higher technology nodes over the years. Traditional primary method of defect (include repair point) control consists of inspection, AIMS and repair steps. Among them, AIMS process needs variou
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::917886db55873c14c80c101211285ac1
https://doi.org/10.1117/12.2195850
https://doi.org/10.1117/12.2195850
Publikováno v:
SPIE Proceedings.
As the design rule of the semiconductor shrinks, the CD MTT (Critical Dimension Mean-to-Target) specification for photomask becomes tighter. So, more precise control of CD MTT is required. We have investigated the CD MTT control and applied it to the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f4b18de94816b8c521013dbcab9bb1c7
https://doi.org/10.1117/12.2196938
https://doi.org/10.1117/12.2196938
Publikováno v:
SPIE Proceedings.
As the mask specifications become tighter for low k1 lithography, more aggressive repair accuracy is required below sub 20nm tech. node. To meet tight defect specifications, many maskshops select effective repair tools according to defect types. Norm
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a9cd1495970153d04d2c32ccc855d0e4
https://doi.org/10.1117/12.2196941
https://doi.org/10.1117/12.2196941