Zobrazeno 1 - 7
of 7
pro vyhledávání: '"Donggi Shin"'
Publikováno v:
Solid-State Electronics. 148:20-26
Thin film transistors have become crucial components of several electronic display devices. However, high leakage current is a frustrating impediment to increasing the efficiency of these transistors. We have performed an experimental and quantitativ
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::14758c6dc0dd5da49e3ca9f25de57c1d
https://doi.org/10.1016/j.sse.2018.07.009
https://doi.org/10.1016/j.sse.2018.07.009
Publikováno v:
Microelectronic Engineering. 247:111591
Low-temperature polycrystalline Si (LTPS) has been widely used to achieve large-area and high-speed TFT devices. In this regard, the enhancement in the mobility and stability of LTPS TFTs was investigated with the insertion of amorphous silicon (a-Si
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::692692fa4cfa462c4c13c52c421b5fc0
https://doi.org/10.1016/j.mee.2021.111591
https://doi.org/10.1016/j.mee.2021.111591
Autor:
Jeongsoo Kim, Sangwoo Bae, Junsin Yi, Kumar Mallem, Jaemin Kim, Geonju Yoon, Jinseok Kim, Jaehyun Cho, Jinsu Park, Hyun-Hoo Kim, Donggi Shin
Publikováno v:
2019 26th International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD).
We report the controllable charge (Electron/hole) trapping window layer properties of atomic layer deposited (ALD) aluminum oxide (Al2O3) gate dielectric layer on the Si substrate. Electron/hole blocking mechanism was archived by controlling the Al 2
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e1387409a648cb7747ea62d33e0938d4
https://doi.org/10.23919/am-fpd.2019.8830613
https://doi.org/10.23919/am-fpd.2019.8830613
Autor:
Cam Phu Thi Nguyen, Youngkuk Kim, Junsin Yi, Kyungsoo Jang, Donggi Shin, Heejun Park, Jeongsoo Kim
Publikováno v:
2018 25th International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD).
We report the effects of negatively charged aluminium-oxynitride (AlON) gate dielectrics on the electrical properties of amorphous-indium-tin-zinc-oxide (a-ITZO) thin-film transistors (TFTs). The a-ITZO TFT using the AlON gate dielectric has high fie
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::72981fd3b9360eb2ac49ece400277d30
https://doi.org/10.23919/am-fpd.2018.8437384
https://doi.org/10.23919/am-fpd.2018.8437384
Autor:
Anh Huy Tuan Le, Vinh Ai Dao, Junsin Yi, Tran Dinh Manh, Cam Phu Thi Nguyen, Donggi Shin, Youngkuk Kim
Publikováno v:
Semiconductor Science and Technology. 34:095020
The storage ability of silicon-rich silicon oxide (Si-rich SiOx) floating gates plays a critical role in poly-Si nonvolatile memory devices. In this study, the Taguchi method, a statistical means of experimental design which allows for the optimizati
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::26d5ec52cc025d321862a369844fdf25
https://doi.org/10.1088/1361-6641/ab36f9
https://doi.org/10.1088/1361-6641/ab36f9
Autor:
Youngkuk Kim, Kyungsoo Jang, Junsin Yi, Youn-Jung Lee, So-Jin Lee, Jungsoo Kim, Donggi Shin, Heejun Park, Thi Cam Phu Nguyen
Publikováno v:
Semiconductor Science and Technology. 33:125004
Non-volatile memory (NVM) devices using carbon dioxide (CO2) and nitrous oxide (N2O) plasma-assisted tunneling layers have outstanding electrical properties measured at 300 K. However, the retention characteristics of NVM devices using CO2 and N2O pl
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::747a4be0fdd227070bca558b2a3bbeff
https://doi.org/10.1088/1361-6641/aae622
https://doi.org/10.1088/1361-6641/aae622
Autor:
Kyungsoo Jang, Sojin Lee, Thi Cam Phu Nguyen, Heejun Park, Jungsoo Kim, Donggi Shin, Youn-Jung Lee, Youngkuk Kim, Junsin Yi
Publikováno v:
Semiconductor Science & Technology; Dec2018, Vol. 33 Issue 12, p1-1, 1p