Zobrazeno 1 - 10
of 20
pro vyhledávání: '"Dongchul Ihm"'
Autor:
Yukihide Tsuji, Doyun Kim, Gwangsu Yoo, ByungHyun Hwang, Kwanghoon Kim, Donhwan Lee, Yoshinori Sasai, Shinwook Yi, Jaehoon Jeong, Dongchul Ihm, ChungSam Jun, Dae Sin Kim
Publikováno v:
AIP Advances, Vol 11, Iss 6, Pp 065129-065129-6 (2021)
A small angle x-ray scattering simulator has been developed for metrology and inspection applications based on the first Born approximation considering non-ideal equipment-related factors. The simulator shows good reproducibility in various device st
Externí odkaz:
https://doaj.org/article/8e354fa78fc344b184e8035a9d129273
Autor:
Eunpa Kim, Myung-Chul Shin, Hee-Jun Ahn, Soyoon Park, Dong-ryul Lee, Haesung Park, Minjung Shin, Dongchul Ihm
Publikováno v:
Metrology, Inspection, and Process Control XXXVII.
Autor:
Byunghyun Hwang, Do-Yun Kim, Shin-Wook Yi, Yukihide Tsuji, Kwanghoon Kim, Jae-hoon Jeong, Donhwan Lee, Chung-sam Jun, Dongchul Ihm, Dae Sin Kim, Yoshinori Sasai, Gwangsu Yoo
Publikováno v:
AIP Advances, Vol 11, Iss 6, Pp 065129-065129-6 (2021)
A small angle x-ray scattering simulator has been developed for metrology and inspection applications based on the first Born approximation considering non-ideal equipment-related factors. The simulator shows good reproducibility in various device st
Publikováno v:
Journal of Physics B: Atomic, Molecular and Optical Physics. 36:2267-2274
Bifurcation analysis is applied to the spontaneous spatial symmetry breaking occurring in the ground state of two-component Bose–Einstein condensates. The cusp catastrophe describing the supercritical pitchfork bifurcation associated with the symme
Autor:
Christine Brown, Gangadharan Sivaraman, Raghav Babulnath, Chang Ho Lee, Minjung Yoon, Satya Kurada, Mingwei Li, Il-suk Park, Dongchul Ihm, Jeong-Ho Ahn, Soo-Bok Chin, Rajiv Galani, Shijin Seong, Hyung-Seop Kim, JaeHyun Kim
Publikováno v:
Metrology, Inspection, and Process Control for Microlithography XXVIII.
Historically when we used to manufacture semiconductor devices for 45 nm or above design rules, IC manufacturing yield was mainly determined by global random variations and therefore the chip manufacturers / manufacturing team were mainly responsible
Autor:
George Simon, Poh Boon Yong, Dongchul Ihm, Gangadharan Sivaraman, Graham Michael Lynch, Jian Wu, Roma Jang, Chang Ho Lee, Byoung-Ho Lee
Publikováno v:
ASMC 2013 SEMI Advanced Semiconductor Manufacturing Conference.
This paper presents a novel systematic methodology to identify yield limiting killer defects by using KLA-Tencor's wafer inspection tools, Klarity Bitmap software and VIVA (Virtual Inspector Virtual Analyzer). This methodology covers two approaches:
Autor:
Seongchae Choi, Hee-Won Sunwoo, Shijin Seong, Dongchul Ihm, Ho-Kyu Kang, Jun-Bum Lee, Byoung-Ho Lee, Dong-Ryul Lee, Soo-Bok Chin, Jeong-Ho Ahn, Hyung-Seop Kim
Publikováno v:
SPIE Proceedings.
This paper presents a methodology for detecting defects more effectively that have a substantial yield impact on several critical layers using a simulation program, which is considerably helpful in analyzing defects on the wafer. First, this paper pr
Autor:
Jun-Bum Lee, Byoung-Ho Lee, Arun Lobo, Ho-Kyu Kang, Dong-Ryul Lee, Chang Ho Lee, Soo-Bok Chin, Gangadharan Sivaraman, Jeong-Ho Ahn, Seongchae Choi, Ravikumar Sanapala, Tetsuya Yamamoto, Dongchul Ihm, Rahul Lakhawat
Publikováno v:
SPIE Proceedings.
Development of an advanced design node for NAND flash memory devices in semiconductor manufacturing requires accelerated identification and characterization of yield-limiting defect types at critical front-end of line (FEOL) process steps. This enabl
Autor:
Peter Ko, Jiyoung Noh, Namki Suk, Jeong-Ho Ahn, Jae Young Park, Timothy A. Johnson, Soo-Bok Chin, Dongchul Ihm, Ho-Kyu Kang, Byoung-Ho Lee
Publikováno v:
SPIE Proceedings.
Distributions of via Depth and bottom CD for TSV wafer have been studied by scanning interference microscopy (Unifire 7900, Nanometrics Inc.). We plotted whole wafer maps for each via depth and bottom CD and found useful relationship between them (i.
Autor:
Minjung Shin, Dongchul Ihm, Chulgi Song, Tianming Bao, Dean Dawson, Vladimir A. Ukraintsev, Moon-Keun Lee
Publikováno v:
Metrology, Inspection, and Process Control for Microlithography XXIII.
Continuing demand for high performance microelectronic products propelled integrated circuit technology into 45 nm node and beyond. The shrinking device feature geometry created unprecedented challenges for dimension metrology in semiconductor manufa