Zobrazeno 1 - 10
of 21
pro vyhledávání: '"Dong-un Jin"'
Autor:
Dong-un Jin, Hoon Kim, Hyun-Joong Kim, Youngdo Kim, Gi-Yeon Han, Tae Hyung Lee, Mo-Beom Yi, Han-Sun Ryou
Publikováno v:
ACS Applied Polymer Materials. 3:2678-2686
Cross-linking is an essential element in enhancing polymers’ mechanical properties in adhesives, elastomers, and hydrogels. However, covalent cross-linking introduces a trade-off relationship betwe...
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fb5bb392dee70b6014da185c7d110782
https://doi.org/10.1021/acsapm.1c00240
https://doi.org/10.1021/acsapm.1c00240
Autor:
Sung-Guk An, Hoon-Kee Min, Cheol-Ho Yu, Jun-Hyuk Cheon, Moo-Jin Kim, Dong-un Jin, Sungchul Kim, Jae-Seob Lee, Tae-Woong Kim, Yong-Hwan Park, Jin Jang
Publikováno v:
SID Symposium Digest of Technical Papers. 42:194-197
This study reported a low temperature polycrystalline silicon LTPS thin film transistor TFT fabrication process on plastic substrates for flexible display applications. Polycrystalline silicon poly-Si films were formed by excimer laser annealing ELA
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::14dbee898a1cf97719486a76659ae429
https://doi.org/10.1889/1.3621268
https://doi.org/10.1889/1.3621268
Publikováno v:
Thin Solid Films. 472:270-274
The nature of the Si–O bonds, composition, and film strain changes in thermally nitrided silicon dioxides in NH3 at 1000 °C and 1 atm is investigated with Fourier transform infrared spectroscopy and spectroscopic ellipsometry. Shifts of the transv
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d1ea46e3e2d99c83b9d7f8de999c8624
https://doi.org/10.1016/j.tsf.2004.06.148
https://doi.org/10.1016/j.tsf.2004.06.148
Publikováno v:
Thin Solid Films. 457:402-405
The transverse optical (TO) and longitudinal optical (LO) phonons of the asymmetric stretch of the O in SiOSi bridging bond in thermal SiO 2 show red shift with decreasing oxide thickness. These shifts are primarily due to interface effects lik
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c1ec6252ca6882981ae7bdf7ec1d1074
https://doi.org/10.1016/j.tsf.2003.11.293
https://doi.org/10.1016/j.tsf.2003.11.293
Autor:
Yeon-Gon Mo, Dong Un Jin, Ho Kyun Chung, Hyun Soo Shin, Jae-Seob Lee, Hun Jung Lee, Jae Kyeong Jeong, Tae Kyung Ahn, Min-Kyu Kim
Publikováno v:
IEEE Electron Device Letters. 28:389-391
Full-color active-matrix organic light-emitting diode panels, driven by poly-Si thin-film transistors (poly-Si TFTs), were successfully fabricated on thin metal foil substrates. The p-channel poly-Si TFTs on metal foil showed a field-effect mobility
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d9248604e818161704c6baa6ae92713d
https://doi.org/10.1109/led.2007.895449
https://doi.org/10.1109/led.2007.895449
Publikováno v:
Physical Review B. 67
Interfacial strain and substoichiometric silicon oxides are the two principal causes that result in the redshift of the transverse and longitudinal optical phonons of the asymmetric stretch of O in the Si-O-Si bridging bond of thermal ${\mathrm{SiO}}
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6f0dc1573c535f28a62f309b3b7b889f
https://doi.org/10.1103/physrevb.67.245305
https://doi.org/10.1103/physrevb.67.245305
Publikováno v:
MRS Proceedings. 747
Interfacial strain and substoichiometric silicon oxides are the two principal causes that result in the redshift of the transverse and longitudinal optical phonons of the asymmetric stretch of O in the Si-O-Si bridging bond of thermal SiO2 with decre
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0ab7845d2278532309e76a9b652fd94c
https://doi.org/10.1557/proc-747-v6.2
https://doi.org/10.1557/proc-747-v6.2
Autor:
Sang-Joon Seo, Hyung-Sik Kim, Moo-Jin Kim, Sang-soo Kim, Denis Stryakhilev, Dong-un Jin, Hyun-Woo Koo, Hoon-Kee Min, Ho-Kyoon Chung, Tae-Woong Kim
Publikováno v:
SID Symposium Digest of Technical Papers. 41:703
A new flexible TFT backplane structure with improved mechanical reliability has been fabricated on a plastic substrate using amorphous indium-gallium-zinc-oxide (a-IGZO) thin film transistors. The panel withstood 10,000 bending cycles at a bending ra
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::db55c628daec8c3921a8c000eadbef78
https://doi.org/10.1889/1.3500565
https://doi.org/10.1889/1.3500565
Autor:
Jae-Seob Lee, Dong Un Jin, Eun Hyun Kim, Dong Bum Lee, Tae-Woong Kim, Yeon-Gon Mo, Jin-Seong Park, Denis Stryakhilev, Young Shin Pyo
Publikováno v:
Applied Physics Letters. 95:123502
We investigated the threshold voltage (Vth) instability for various gate dielectrics (SiNx and SiOx) in amorphous indium-gallium-zinc oxide (a-IGZO) thin film transistors (TFTs). The a-IGZO TFTs with SiNx 150 °C exhibited reasonable electrical perfo
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::74bd4c203d84c59c0807c8407e76d7e5
https://doi.org/10.1063/1.3232179
https://doi.org/10.1063/1.3232179
Autor:
Sung-Guk An, Yeon-Gon Mo, Dong-Bum Lee, Yong-Shin Pyo, Denis Stryakhilev, Jae-Sup Lee, Dong-un Jin, Tae-Woong Kim, Ho Kyoon Chung, Jin-Seong Park
Publikováno v:
Applied Physics Letters. 95:013503
We have fabricated 6.5 in. flexible full-color top-emission active matrix organic light-emitting diode display on a polyimide (PI) substrate driven amorphous indium gallium zinc oxide thin-film transistors (a-IGZO TFTs). The a-IGZO TFTs exhibited fie
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::62cdcedb4f75701d8c35c8fc222dc600
https://doi.org/10.1063/1.3159832
https://doi.org/10.1063/1.3159832