Zobrazeno 1 - 10
of 13
pro vyhledávání: '"Dong-il Bae"'
Autor:
Mark S. Rodder, Mong-song Liang, Cheol Kim, Taek-Soo Jeon, Dong-Won Kim, Sunjung Kim, Kittl Jorge A, Jae Hoo Park, Wookje Kim, Jongwook Jeon, Sun-Ghil Lee, Myung-Geun Song, Kab-Jin Nam, Seung-Hun Lee, Yeon-Cheol Heo, Sean Lian, Sang-Woo Lee, Uihui Kwon, Geum-Jong Bae, Dong-il Bae, Kang-ill Seo, Krishna Kumar Bhuwalka, Ki-Hyun Hwang, Yihwan Kim, E. S. Jung, Jae-Young Park
Publikováno v:
2016 IEEE International Electron Devices Meeting (IEDM).
A novel tensile Si (tSi) and compressive SiGe (cSiGe) dual-channel FinFET CMOS co-integration scheme, aimed at logic applications for the 5nm technology node and beyond, is demonstrated for the first time, showing electrical performance benefits and
Autor:
Eun-ae Chung, Geum-Jong Bae, Nakanishi Toshiro, Maria Toledano-Luque, Jin-soak Kim, Guangfan Jiao, Thomas Kauerauf, Ki-Hyun Hwang, Dong-Won Kim, Seung-Hun Lee, Kab-Jin Nam, Dong-il Bae
Publikováno v:
2016 IEEE International Electron Devices Meeting (IEDM).
In this work, the oxide electric field (Eox) reduction caused by negatively charged traps is proposed to explain the robustness of SiGe pMOSFETs to negative gate bias temperature instability (NBTI) stress. The high density of negatively charged accep
Autor:
Philip J. Oldiges, Dong-il Bae, Andreas Scholze, Huiling Shang, Peter Zeitzoff, Dechao Guo, Bomsoo Kim, Kang-ill Seo, Xin Sun, Theodorus E. Standaert, Neeraj Tripathi
Publikováno v:
IEEE Electron Device Letters. 34:1485-1487
The effect of positive fixed oxide charge (Qf) on the electrical characteristics of bulk FinFET devices is investigated and newly addressed as a Fin scaling detractor. The aggressively scaled Fin width leads to abnormal subthreshold slope (SS) degrad
Publikováno v:
IEEE Transactions on Nanotechnology. 8:100-105
A body-tied partial-insulated FET (PiFET) one-transistor (1T) DRAM having good heat immunity for embedded memory is proposed in this paper. PiFET structure using partially insulated oxide (PiOX) formed on bulk wafer can act as a 1T DRAM by applying a
Publikováno v:
2008 IEEE Silicon Nanoelectronics Workshop.
A multi-functional URAM (Unified-RAM) showing both 1T DRAM and flash memory characteristics at one cell is demonstrated. For flash memory characteristics, we fabricated a conventional floating body SOI NMOSFET with O/N/O stacks as a front gate. By co
Autor:
Jae Sub Oh, Jung Jae Yoo, Yang-Kyu Choi, Gi Sung Lee, Hyunjin Lee, Lee-Eim Yu, Jim Mo Yang, Maesoon lm, Seong-Wan Ryu, Eujime Lee, Jin-Woo Han, Dong-il Bae, Kuk-Hwan Kim, Sungho Kim, Hee Mok Lee, Sang Cheol Jeon, Yun Chang Park, Chimgjin Kim, Woo Ho Bae, Ju-Hyun Kim, Kwang Hee Kim
Publikováno v:
2007 IEEE Symposium on VLSI Technology.
Silicon nanowire-FET (SiNAWI-FET) for high performance logic device with consideration of current direction effects and terabit non-volatile memory (NVM) device using an 8 nm SiNAWI-NVM with oxide/nitride/oxide (ONO) and omega-gate structure is repor
Autor:
Wonshik Lee, Seung-Chul Yang, Yang-Keun Park, Byung-Hyuk Roh, Kyu-Hyun Lee, Eun-Cheol Lee, Jin-woo Lee, Yong-Sung Kim, Soo-Ho Shin, Sung-hee Han, Won-suk Yang, Ju-Yong Lee, Dong-il Bae, Bo-Young Song, Jun Han, Joon-Ho Sung, Dong-jun Lee, Kinam Kim, Sang-Hyeon Lee, Tae-Young Chung
Publikováno v:
IEEE InternationalElectron Devices Meeting, 2005. IEDM Technical Digest..
We integrate FinFET DRAM in sub-60nm feature size. To avoid severe passing gate effects in FinFET cell array, we introduce a local damascene gate structure. Threshold voltage control of the ultra thin body transistors is successfully achieved by adop
Autor:
Dong-won Shin, Jun-Sik Bae, Seung-Won Sung, Sang-Uhk Rhie, Kinam Kim, Tae-Young Chung, Dong-il Bae, Ji-Soong Park
Publikováno v:
SPIE Proceedings.
In this paper, we report highly effective Optical Proximity Correction (OPC) techniques to improve the process margin in the photo lithography process of metal layer, which can be applied to 0.14 micrometer DRAM technology node and beyond. The propos
Autor:
Yong-Sung Kim, Sang-Hyeon Lee, Soo-Ho Shin, Sung-Hee Han, Ju-Yong Lee, Jin-Woo Lee, Jun Han, Seung-Chul Yang, Joon-Ho Sung, Eun-Cheol Lee, Bo-Young Song, Dong-Jun Lee, Dong-Il Bae, Won-Suk Yang, Yang-Keun Park, Kyu-Hyun Lee, Byung-Hyuk Roh, Tae-Young Chung, Kinam Kim, Wonshik Lee
Publikováno v:
IEEE International Electron Devices Meeting, 2005. IEDM Technical Digest; 2005, p315-318, 4p
Publikováno v:
한국해양공학회지, Vol 32, Iss 4, Pp 237-243 (2018)
Recently, it was predicted that the size of offshore markets will grow as gas prices edge up. This paper presents experimental results for using strings as a suppression device on a circular cylinder and discusses the various data. A test model was u
Externí odkaz:
https://doaj.org/article/ca5ceadeceee440a97de1e4102a1c3aa