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pro vyhledávání: '"Dong-Won Chang"'
Autor:
Jin-Joo Kim, Il-Han Park, Byung-Gook Park, Jun Su Kim, Daewoong Kang, Won-Seong Lee, Hyungcheol Shin, Dong-Won Chang, Hyukje Kwon, Kyongjoo Lee, Sungnam Jang, Jong Duk Lee, Jaehong Lee
Publikováno v:
Japanese Journal of Applied Physics. 47:2676-2679
We introduced the self aligned floating poly (SAP) process using the SiN liner at active edge to improve the cell characteristics of high density NAND flash memory devices. Capacitance and electric field at corner of active edge are related to on cel