Zobrazeno 1 - 8
of 8
pro vyhledávání: '"Dong-Wan Jo"'
Autor:
Hyung-Soo Ahn, Min Yang, Dong-Wan Jo, Hunsoo Jeon, Wy-Il Yun, Se-Gyo Jung, Seon-Min Bae, Jin-Eun Ok, Gang-Suok Lee, Young-Cheol Lee
Publikováno v:
Journal of the Korean Crystal Growth and Crystal Technology. 21:114-118
We report on the growth and characterization of nano and micro scale GaN structures selectively grown on the vertex of hexagonal GaN pyramids. near the vertex of hexagonal GaN pyramids was removed by optimized photolithgraphy process and followed by
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6a72a975347ac89741660bfa33188b68
https://doi.org/10.6111/jkcgct.2011.21.3.114
https://doi.org/10.6111/jkcgct.2011.21.3.114
Autor:
Young Hun Han, Se Gyo Jung, Jin Eun Ok, Gang Suok Lee, Seon Min Bae, Hyung Soo Ahn, Wy Il Jo, Dong Wan Jo, Hun Soo Jeon, Min Yang
Publikováno v:
Journal of the Korean Physical Society. 58:1146-1150
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::89729d6512e02778c300fa9e1cf36347
https://doi.org/10.3938/jkps.58.1146
https://doi.org/10.3938/jkps.58.1146
Autor:
Kyung-Hwa Kim, Hyung-Soo Ahn, Min Yang, Seon-Min Bae, Se-Gyo Jung, Ah-Reum Lee, Sam-Nyeong Yi, Jin-Eun Ok, Dong-Wan Jo, Jong-Seong Bae, Hunsoo Jeon, Gang-Seok Lee, Hong-Ju Ha
Publikováno v:
Journal of the Korean Crystal Growth and Crystal Technology. 20:107-112
The Cu is the absorber material for thin film solar cell with high absorption coefficient of . In the case of CIGS, the movable energy band gap from (1.00 eV) to (1.68 eV) can be acquired while controlling Ga contain ratio. Generally, the co-evaporat
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9610c8569bee3d1967d6d9bb47a2de79
https://doi.org/10.6111/jkcgct.2010.20.3.107
https://doi.org/10.6111/jkcgct.2010.20.3.107
Autor:
Hyung-Soo Ahn, Dong-Wan Jo, Hunsoo Jeon, Gang-Suok Lee, Ah-Reum Lee, Jiho Chang, Jin-Eun Ok, Young-Ji Cho, Min Yang, Kyung-Hwa Kim
Publikováno v:
Journal of the Korean Crystal Growth and Crystal Technology. 20:113-116
We report on the growth and characteristics of the structural and optical properties of InGaN nano-structures doped with antimony (Sb) as a catalyst. The use of catalyst has been explored to modify the growth and defect generation during strained lay
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4e5863322e3c6cfa7e7306487a938df0
https://doi.org/10.6111/jkcgct.2010.20.3.113
https://doi.org/10.6111/jkcgct.2010.20.3.113
Autor:
Wy Il Yun, Min Yang, Hyung Soo Ahn, Se Gyo Jung, Jin Eun Ok, Dong Wan Jo, Seon Min Bae, Gang Suok Lee, Hun Soo Jeon
Publikováno v:
Japanese Journal of Applied Physics. 51:01AF03
We report on the growth and characterization of microscale GaN structures selectively grown on the apexes of hexagonal GaN pyramids. SiO2 near the apex of the hexagonal GaN pyramids was removed by an optimized photolithography process and subsequentl
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::8dca9bc6ad6017b7fd17bad700b80f78
https://doi.org/10.7567/jjap.51.01af03
https://doi.org/10.7567/jjap.51.01af03
Autor:
Min Yang, Gang Suok Lee, Ah Reum Lee, Jin Eun Ok, Kyung-Hwa Kim, Dong Wan Jo, Hun Soo Jeon, Hyung Soo Ahn
Publikováno v:
Japanese Journal of Applied Physics. 50:01AC02
We determined the effect of the type of substrate on the growth of InGaN nanostructures by mixed-source hydride vapor phase epitaxy (HVPE). InGaN nanostructures were formed on c-plane, r-plane sapphire, and undoped GaN substrates at various growth te
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::116c75a586c61c50835fb75708a94f35
https://doi.org/10.7567/jjap.50.01ac02
https://doi.org/10.7567/jjap.50.01ac02
Autor:
Dong-Wan Jo, Hunsoo Jeon, Ah Reum Lee, Suok-Whan Kim, Hyung Soo Ahn, Min Yang, Chae-Ryong Cho, Jae Hak Lee, Kyoung Hwa Kim, Hong-Ju Ha, Jin-Eun Ok, Sam Nyung Yi, Gang-Seok Lee
Publikováno v:
Japanese Journal of Applied Physics. 50:01AD06
We report the characterization of the InGaN/GaN multi-quantum-well (MQW) light-emitting diode (LED) grown on a patterned sapphire substrate by metal organic chemical vapor deposition (MOCVD) using the selective area growth (SAG) method. The SAG patte
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::25a67c707662a76bbf02ab94a5913cc2
https://doi.org/10.1143/jjap.50.01ad06
https://doi.org/10.1143/jjap.50.01ad06
Autor:
Chae-Ryong Cho, Sam Nyung Yi, Suck-Whan Kim, Ah-Reum Lee, Min Yang, Hong-Ju Ha, Kyoung Hwa Kim, Hyung Soo Ahn, Jin-Eun Ok, Dong-Wan Jo, Hunsoo Jeon, Gang-Seok Lee
Publikováno v:
Japanese Journal of Applied Physics. 50:01AG01
CuInGaSe (CIGS) mixed-source was prepared by hydride vapor transport method (HVT). The new source synthesis method was attempted by mixing several metals such as Cu, In, Ga, and Se with 3:5:1:4 mass ratios. This mixed-source was soaked at 1090 °C fo
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::117a344ea388d1099cdbe5fa41938ad7
https://doi.org/10.7567/jjap.50.01ag01
https://doi.org/10.7567/jjap.50.01ag01