Zobrazeno 1 - 10
of 40
pro vyhledávání: '"Dong-Soo Yoon"'
Publikováno v:
Journal of Electronic Materials. 32:890-898
The effect of a thin RuOx layer formed on the Ru/TiN/doped poly-Si/Si stack structure was compared with that on the RuOx/TiN/doped poly-Si/Si stack structure over the post-deposition annealing temperature ranges of 450–600°C. The Ru/TiN/poly-Si/Si
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9f06e1f9fb34983446c705430e704b18
https://doi.org/10.1007/s11664-003-0206-z
https://doi.org/10.1007/s11664-003-0206-z
Publikováno v:
Acta Materialia. 51:2531-2538
The electrical properties for the new RuTiN barrier material were investigated and compared with those for the TiN barrier. In case of the TiN barrier in the sputtered-(Ba,Sr)TiO 3 simple stack-type structure, the TiN film was partially oxidized in t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::514c44329717c504dd90fbaa2ed82e23
https://doi.org/10.1016/s1359-6454(03)00051-x
https://doi.org/10.1016/s1359-6454(03)00051-x
Publikováno v:
Progress in Materials Science. 48:275-371
The barrier properties and failure mechanisms for many diffusion barriers in high-density volatile and non-volatile capacitors were reviewed. Based on failure mechanisms of these barriers reported by others, we suggested the new design concept for a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1d5c84f032f2a4edf693e98264a6301a
https://doi.org/10.1016/s0079-6425(02)00012-9
https://doi.org/10.1016/s0079-6425(02)00012-9
Autor:
Jae Sung Roh, Dong-Soo Yoon
Publikováno v:
IEEE Transactions on Electron Devices. 49:1917-1927
A new design concept for diffusion barriers in highdensity memory capacitors was suggested, and both the RuTiN and the RuTiO films, as sacrificial oxygen diffusion barriers, were proposed. Contact resistance, the most important electrical parameter f
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::00ff2204582fabcac4eb1e33a49b2ba3
https://doi.org/10.1109/ted.2002.804710
https://doi.org/10.1109/ted.2002.804710
Autor:
Dong-Soo Yoon, Jae Sung Roh
Publikováno v:
Semiconductor Science and Technology. 17:1048-1057
We have investigated the effects of inserting a thin Pt layer into the bottom electrode heterostructure and of post-treatment by rapid thermal oxidation (RTO) on the surface morphology of Ba1−xSrxTiO3 (BST) films and on the thermal stability of the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::721441a3e58d278b100e4d4c6785e6b9
https://doi.org/10.1088/0268-1242/17/10/303
https://doi.org/10.1088/0268-1242/17/10/303
Publikováno v:
Critical Reviews in Solid State and Materials Sciences. 27:143-226
This article reviews the current status of high-density capacitor for volatile memory devices. The dielectric properties for both the Ta2O5 film and the (Ba, Sr)TiO3 (BST) dielectric materials using either the metal organic chemical vapor deposition
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::12adb0ea996772c74a2ee08a0acf9015
https://doi.org/10.1080/10408430208500495
https://doi.org/10.1080/10408430208500495
Autor:
Dong-Soo Yoon, Jae Sung Roh
Publikováno v:
Semiconductor Science and Technology. 17:599-606
To broaden the process window of the conventional sputtered TiN diffusion barrier and to find an appropriate bottom electrode for high-density capacitors, we investigated the effect of a thin RuOx oxidized layer formed at the surface of each Ru and R
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2ec7faac1154af12da170f920a5c3b4b
https://doi.org/10.1088/0268-1242/17/6/317
https://doi.org/10.1088/0268-1242/17/6/317
Publikováno v:
Journal of Electronic Materials. 30:493-502
The effects of the amount of RuO2 added in the Ta film on the electrical properties of a Ta-RuO2 diffusion barrier were investigated using n++-poly-Si substrate at a temperature range of 650–800°C. For the Ta layer prepared without RuO2 addition,
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::281fe4468766bada0414247323c9271b
https://doi.org/10.1007/s11664-001-0089-9
https://doi.org/10.1007/s11664-001-0089-9
Publikováno v:
Journal of Applied Physics. 86:2544-2549
The effects of RuO2 addition on the barrier properties of the Ta layer were investigated at the temperature range of 650–800 °C in air. For the Pt/Ta/TiSi2/poly-Si/SiO2/Si structure, its layer structure was completely collapsed after annealing at
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6824f1817e8dff633cb64f5f31dda737
https://doi.org/10.1063/1.371090
https://doi.org/10.1063/1.371090
Publikováno v:
Journal of The Electrochemical Society. 146:3101-3104
(Ba 1-x Sr x )TiO 3 (BST) films were deposited on the new electrode structures of Pt/RuO 2 + Ta/TiSi 2 /poly-Si/SiO 2 /Si (PRTS) and Pt/RuO 2 + Ta/poly-Si/SiO 2 /Si (PRS) by metallorganic chemical vapor deposition. The films deposited on PRTS show sm
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ebdcc194593f01f7b5654245bdf543af
https://doi.org/10.1149/1.1392437
https://doi.org/10.1149/1.1392437