Zobrazeno 1 - 10
of 54
pro vyhledávání: '"Dong-Shong Liang"'
Autor:
Dong-Shong Liang, 梁東雄
97
Most of the previously published negative-differential-resistance circuits (NDR) are implemented by the resonant tunneling diode (RTD). These devices and circuits are Ⅲ-Ⅴ compound semiconductors, which are not compatible with the main str
Most of the previously published negative-differential-resistance circuits (NDR) are implemented by the resonant tunneling diode (RTD). These devices and circuits are Ⅲ-Ⅴ compound semiconductors, which are not compatible with the main str
Externí odkaz:
http://ndltd.ncl.edu.tw/handle/66458530406168358510
Publikováno v:
IEICE Transactions on Electronics. :86-92
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::95f74a94c737f0f72aa948478792b672
https://doi.org/10.1587/transele.e95.c.86
https://doi.org/10.1587/transele.e95.c.86
Publikováno v:
Analog Integrated Circuits and Signal Processing. 70:141-145
The behavior of a novel frequency divider circuit using negative differential resistance (NDR) circuit is studied. This NDR circuit is made of resistors (R) and bipolar-junction-transistor (BJT) devices. It can show the NDR characteristic in its comb
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::2ab06e4b89f3e53eef1550fb7194e410
https://doi.org/10.1007/s10470-011-9653-2
https://doi.org/10.1007/s10470-011-9653-2
Autor:
Dong-Shong Liang, Kwang-Jow Gan
Publikováno v:
IEICE Transactions on Electronics. :514-520
A multiple-peak negative differential resistance (NDR) circuit made of standard Si-based metal-oxide-semiconductor field-effect-transistor (MOS) and SiGe-based heterojunction bipolar transistor (HBT) is demonstrated. We can obtain a three-peak I-V cu
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::045de286935507e6e25b265a4c2303cd
https://doi.org/10.1587/transele.e93.c.514
https://doi.org/10.1587/transele.e93.c.514
Publikováno v:
IEICE Transactions on Information and Systems. :2068-2072
The paper demonstrates a novel multiple-valued logic (MVL) design using a three-peak negative differential resistance (NDR) circuit, which is made of several Si-based metal-oxide-semiconductor field-effect-transistor (MOS) and SiGe-based heterojuncti
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2587b862cc0800a26476451c4f5edd6c
https://doi.org/10.1587/transinf.e93.d.2068
https://doi.org/10.1587/transinf.e93.d.2068
Publikováno v:
Analog Integrated Circuits and Signal Processing. 62:63-68
We investigate four novel negative-differential-resistance (NDR) circuits using the combination of the standard Si-based n-channel metal-oxide-semiconductor field-effect-transistor (NMOS) and SiGe-based heterojunction bipolar transistor (HBT). By sui
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ecdbc700ea47b105a3689cded9baf46a
https://doi.org/10.1007/s10470-009-9327-5
https://doi.org/10.1007/s10470-009-9327-5
Publikováno v:
IEICE Transactions on Electronics. :635-638
The paper demonstrates a novel two-peak negative differential resistance (NDR) circuit combining Si-based metal-oxide-semiconductor field-effect-transistor (MOS) and SiGe-based heterojunction bipolar transistor (HBT). Compared to the resonant-tunneli
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::eee33e4a40fc176454cde41566e23fa9
https://doi.org/10.1587/transele.e92.c.635
https://doi.org/10.1587/transele.e92.c.635
Publikováno v:
Analog Integrated Circuits and Signal Processing. 59:161-167
A novel multiple-selected and multiple-valued memory (MSMVM) design using the negative differential resistance (NDR) circuits is demonstrated. The NDR circuits are made of Si-based metal-oxide-semiconductor field-effect-transistor (MOS) and SiGe-base
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ad0c6d586130239516902c1c702d64c0
https://doi.org/10.1007/s10470-008-9216-3
https://doi.org/10.1007/s10470-008-9216-3
Publikováno v:
Solid-State Electronics. 52:882-885
The design of a four-valued multiplexer using the negative differential resistance (NDR) circuit is demonstrated. The NDR circuit used in this work is made of the Si-based metal–oxide–semiconductor field-effect-transistor (MOS) and the SiGe-based
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c28bccebdb0ce8b7b887d01f6f454e30
https://doi.org/10.1016/j.sse.2008.01.006
https://doi.org/10.1016/j.sse.2008.01.006
Publikováno v:
Solid-State Electronics. 52:175-178
A multiple-input NOR logic gate using the negative differential resistance (NDR) circuit is demonstrated. The NDR circuit is composed of four resistors (R) and two SiGe-based heterojunction bipolar transistor (HBT), and it can show the NDR characteri
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::077a795a55c49fa96aa44faeaac7b2cd
https://doi.org/10.1016/j.sse.2007.10.004
https://doi.org/10.1016/j.sse.2007.10.004