Zobrazeno 1 - 10 of 30 pro vyhledávání: '"Dong-Seok Nam"'
4
Experimental verification of high-NA imaging simulations using SHARP
Autor: Anton van Oosten, Timon Fliervoet, Eelco van Setten, Joern-Holger Franke, Gerardo Bottiglieri, Rene Carpaij, Dong-Seok Nam, Fei Liu, Natalia Davydova, Vincent Wiaux, Joseph Zekry, John McNamara, Patrick P. Naulleau, Markus P. Benk, Ken Goldberg
Publikováno v: Extreme Ultraviolet Lithography 2020.
The next-generation high-NA EUV scanner is being developed to enable patterning beyond the 3-nm technology node. Design and development of the scanner are based on rigorous litho-simulations. It is important to verify key imaging simulation findings
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::52b7865a00d92bb9a6d496972edee69d
https://doi.org/10.1117/12.2572846
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5
Resist charging effect in photomask: Its impact on pattern placement error and critical dimension
Autor: Byung-Gook Kim, Jin Choi, Dong Seok Nam, Sang-Gyun Woo, Han-Ku Cho
Publikováno v: Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 26:2345-2350
By the development of the double exposure technique or the double patterning technique, the pattern placement error of a photomask is interesting because of its impact on the size and position of wafer pattern. Among various sources to induce the pat
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::43a7612108bc02350dac1bc7e15c27c3
https://doi.org/10.1116/1.2978406
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6
Plasma monitoring of chrome dry etching for mask making
Autor: Sung-Won Kwon, Han-Ku Cho, Dong-Seok Nam, Dong-Chan Kim, Sang-Gyun Woo
Publikováno v: SPIE Proceedings.
As a photomask feature size shrinks, chrome (Cr) dry etching process is one of the most critical steps which define the performance of critical dimensions (CDs). In consequence, plasma conditions should be maintained stable in a etch chamber. In this
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::7081a1b2ae252545c8d1c4889c8e0940
https://doi.org/10.1117/12.866828
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7
E-beam shot count estimation at 32 nm HP and beyond
Autor: Jin Choi, Sang-Hee Lee, Dong-Seok Nam, Sang-Gyun Woo, Byung-Gook Kim, Han-Ku Cho
Publikováno v: SPIE Proceedings.
Recent Low k1 era requires aggressive OPC technology with advanced lithography technology. The aggressive OPC contains the rounded pattern and a lot of assistant pattern which are the main source to increase the shot division. We have defined the sho
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::5a723d7474ce923bb387241e7f2c0fd3
https://doi.org/10.1117/12.824284
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8
Image placement error of photomask due to pattern loading effect: analysis and correction technique for sub-45 nm node
Autor: Han-Ku Cho, Sang-Hee Lee, Dong-Seok Nam, Jin Choi, Byung-Gook Kim, Sang-Gyun Woo
Publikováno v: SPIE Proceedings.
As semiconductor features shrink in size and pitch, the image placement error at photomask has been interested as an important factor to be reduced. Especially, by the development of double exposure technique (DET) or double patterning technique (DPT
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::894a4ee5aaef4eb9759a6a058099a93a
https://doi.org/10.1117/12.793074
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9
Improvement of mask CD uniformity for below 45-nm node technology
Autor: Jung-Hoon Park, Seokjong Bae, Byung-Gook Kim, Dong-Seok Nam, Sang-Gyun Woo, Hojune Lee, Han-Ku Cho
Publikováno v: SPIE Proceedings.
According to device shrinkage, pattern load, layout geometry and process induced critical dimension (CD) trend are the most important factors deciding mask CD uniformity in a mask manufacturing process. The CD distribution is generally divided by two
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::9f2930fac29a83a8250f947cc1f56c55
https://doi.org/10.1117/12.746810
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10
New PEC optimization for the mask fabrication of sub-50nm memory device
Autor: Hee-Bom Kim, Byung-Gook Kim, Sang-Hee Lee, Han-Ku Cho, Dongguk Ryu, Sang-Gyun Woo, Jung-Hoon Park, Dong-Seok Nam
Publikováno v: SPIE Proceedings.
The tight MTT control is required for the mask process of sub-50nm design node due to the complex OPC and insufficient process margin. The MTT below 5nm is already required for the critical layers. Below 4nm is required for sub-50nm node. In the view
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::673992227e128fc2590a2be633c0446c
https://doi.org/10.1117/12.728988
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