Zobrazeno 1 - 10
of 281
pro vyhledávání: '"Dong-Sam Ha"'
Publikováno v:
IEEE Microwave and Wireless Technology Letters. 33:567-570
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::35c1ef5726d4aafc38885d09c37ef6c6
https://doi.org/10.1109/lmwt.2023.3235655
https://doi.org/10.1109/lmwt.2023.3235655
Autor:
Fariborz Lohrabi Pour, Dong Sam Ha
This paper presents a study on the impact of the power conversion efficiency (PCE) of RF energy harvesters on the performance of wireless Internet-of-Things (IoT) devices including the sampling rate and data security. An RF energy harvester to harves
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::5375af2db68a9180c46a93ed431b5700
https://hdl.handle.net/10919/115722
https://hdl.handle.net/10919/115722
Publikováno v:
IEEE Transactions on Microwave Theory and Techniques. 70:3640-3651
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::82d609cee0e19856274bc62b20c76217
https://doi.org/10.1109/tmtt.2022.3173902
https://doi.org/10.1109/tmtt.2022.3173902
Publikováno v:
GLOBECOM 2022 - 2022 IEEE Global Communications Conference.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1735df35da11604a1ab56f38e3fbb4a1
https://doi.org/10.1109/globecom48099.2022.10001060
https://doi.org/10.1109/globecom48099.2022.10001060
Vibration Energy Harvesting IC Design with Incorporation of Two Maximum Power Point Tracking Methods
Publikováno v:
2022 IEEE 65th International Midwest Symposium on Circuits and Systems (MWSCAS).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::29d63f64208fb7c082141df0086a4b70
https://doi.org/10.1109/mwscas54063.2022.9859451
https://doi.org/10.1109/mwscas54063.2022.9859451
Publikováno v:
2022 IEEE International Symposium on Circuits and Systems (ISCAS).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3cf78e998827a275e1b0b99760ebb095
https://doi.org/10.1109/iscas48785.2022.9937417
https://doi.org/10.1109/iscas48785.2022.9937417
Autor:
Abhishek Priyadarshan Damle, Sook Shin Ha, Zhuqing Zhao, Barbara Roqueto Dos Reis, Robin White, Dong Sam Ha
Publikováno v:
2022 IEEE International Symposium on Circuits and Systems (ISCAS).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5008fa1417f1f7672d73876479c86d75
https://doi.org/10.1109/iscas48785.2022.9937324
https://doi.org/10.1109/iscas48785.2022.9937324
Autor:
Fariborz Lohrabi Pour, Dong Sam Ha
Publikováno v:
2022 IEEE International Symposium on Circuits and Systems (ISCAS).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1f4e6747de55b1ec477eb9fb867927e4
https://doi.org/10.1109/iscas48785.2022.9937689
https://doi.org/10.1109/iscas48785.2022.9937689
Publikováno v:
IEEE Transactions on Circuits and Systems I: Regular Papers. 68:581-591
This article presents a high temperature model for gallium nitride (GaN) high electron mobility transistor (HEMT) on silicon carbide (SiC). The proposed model for the channel resistance $\text {R}_{\text {ds}}$ is based on an empirical nonlinear mode
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::73b028f9bf178b1e494c3696a7fa6bd5
https://doi.org/10.1109/tcsi.2020.3039907
https://doi.org/10.1109/tcsi.2020.3039907
Publikováno v:
IEEE Transactions on Circuits and Systems I: Regular Papers. 67:5153-5161
This paper presents a high temperature voltage-controlled oscillator (VCO) for downhole communications. The VCO with the center frequency of 2.37 GHz is prototyped with $0.25~\mu \text{m}$ GaN-on-SiC technology high electron mobility transistors (HEM
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0904b3126f879762fc396f4b59df241a
https://doi.org/10.1109/tcsi.2020.3010768
https://doi.org/10.1109/tcsi.2020.3010768