Zobrazeno 1 - 7
of 7
pro vyhledávání: '"Dong-Ryul Chang"'
Publikováno v:
Clinical and Molecular Hepatology, Vol 26, Iss 3, Pp 340-351 (2020)
Background/Aims This study aimed to compare the diagnostic performances of Liver Imaging Reporting and Data System (LI-RADS) 2018 and Korean Liver Cancer Association-National Cancer Center (KLCA-NCC) 2018 criteria on magnetic resonance imaging (MRI)
Externí odkaz:
https://doaj.org/article/661b8e5170704dc99e3c131ea39b6e22
Publikováno v:
Biology, Vol 11, Iss 7, p 1087 (2022)
We investigated the feasibility of ultrasound attenuation imaging (ATI) for assessing pediatric hepatic steatosis. A total of 111 children and adolescents who underwent liver ultrasonography with ATI for suspected hepatic steatosis were included. Par
Externí odkaz:
https://doaj.org/article/6e192aee8f7e44b18f357cd9fdd78a8a
Publikováno v:
Clinical and Molecular Hepatology
Clinical and Molecular Hepatology, Vol 26, Iss 3, Pp 340-351 (2020)
Clinical and Molecular Hepatology, Vol 26, Iss 3, Pp 340-351 (2020)
Background/Aims: This study aimed to compare the diagnostic performances of Liver Imaging Reporting and Data System (LI-RADS) 2018 and Korean Liver Cancer Association-National Cancer Center (KLCA-NCC) 2018 criteria on magnetic resonance imaging (MRI)
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::deb9a9a58f147b796a7087a4075fc290
https://pubmed.ncbi.nlm.nih.gov/32536046
https://pubmed.ncbi.nlm.nih.gov/32536046
Autor:
E. S. Jung, Byoung-Chul Park, Sung-Jun Kim, Dong-Ryul Chang, Sung-young Lee, Kee-In Bang, Sang-Bae Yi
Publikováno v:
2008 International Semiconductor Conference.
In high voltage transistor (HVT), device characteristics could be affected by little changes of doping concentration or parasitic charges due to low substrate doping concentrations. Humps caused by boron segregation in sub-threshold region of HVT mak
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7acdd1355198f353eb656fdcdb30a741
https://doi.org/10.1109/smicnd.2008.4703412
https://doi.org/10.1109/smicnd.2008.4703412
Autor:
Byoungchul Park, SungYoung Lee, Dong-Ryul Chang, Kee-In Bang, Sung-Jun Kim, Sang-Bae Yi, Eun-Seung Jung
Publikováno v:
ECS Meeting Abstracts. :1863-1863
not Available.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::dcf579c2d46f282d029575ab40f634ef
https://doi.org/10.1149/ma2008-02/23/1863
https://doi.org/10.1149/ma2008-02/23/1863
Autor:
Byoung-Chul Park, Sung-Young Lee, Dong-Ryul Chang, Kee-In Bang, Sung-Jun Kim, Sang-Bae Yi, Eun-Seung Jung
Publikováno v:
2008 9th International Conference on Solid-State & Integrated-Circuit Technology; 2008, p172-175, 4p
Autor:
Byoung-Chul Park, Sung-Young Lee, Dong-Ryul Chang, Kee-In Bang, Sung-Jun Kim, Sang-Bae Yi, Eun-Seung Jung
Publikováno v:
2008 International Semiconductor Conference; 2008, p313-316, 4p