Zobrazeno 1 - 10
of 93
pro vyhledávání: '"Dong-Pyo Han"'
Publikováno v:
Materials, Vol 17, Iss 1, p 167 (2023)
This study attempted to improve the internal quantum efficiency (IQE) of 580 nm emitting Ga0.70In0.30N/GaN quantum-wells (QWs) through the replacement of a conventional c-sapphire substrate and an in-situ low-temperature GaN (LT-GaN) buffer layer wit
Externí odkaz:
https://doaj.org/article/815e180f2ca04d098d4608634fdd846f
Autor:
Ryoya Hiramatsu, Ryo Takahashi, Ryoto Fujiki, Keisuke Hozo, Kanato Sawai, Dong-Pyo Han, Motoaki Iwaya, Tetsuya Takeuchi, Satoshi Kamiyama, Isamu Akasaki
Publikováno v:
Frontiers in Physics, Vol 9 (2021)
In this paper, a hybrid numerical simulation tool is introduced and performed for GaInN-based light-emitting diodes (LEDs) with metal-embedded nanostructure to theoretically predict external quantum efficiency (EQE), which composed of finite-differen
Externí odkaz:
https://doaj.org/article/d95d8acc11ef4e98ab17d11ddd3c1efa
Autor:
Kosuke Yanai, Weifang Lu, Yoma Yamane, Dong-Pyo Han, Haiyan Ou, Motoaki Iwaya, Tetsuya Takeuchi, Satoshi Kamiyama, Isamu Akasaki
Publikováno v:
Nanomaterials, Vol 10, Iss 10, p 2075 (2020)
This study investigated the fabrication of porous fluorescent SiC using a constant voltage-controlled anodic oxidation process. The application of a high, constant voltage resulted in a spatial distinction between the porous structures formed inside
Externí odkaz:
https://doaj.org/article/7344bb8a53694685a0a731bd06396d90
Autor:
Muhammad Usman, Kiran Saba, Dong-Pyo Han, Nazeer Muhammad, Shabieh Farwa, Muhammad Rafiq, Tanzila Saba
Publikováno v:
AIP Advances, Vol 8, Iss 3, Pp 039901-039901-1 (2018)
Externí odkaz:
https://doaj.org/article/708f9632603e4f3cb5951d971825f835
Autor:
Muhammad Usman, Kiran Saba, Dong-Pyo Han, Nazeer Muhammad, Shabieh Farwa, Rafique Muhammad, Tanzila Saba
Publikováno v:
AIP Advances, Vol 8, Iss 1, Pp 015005-015005-6 (2018)
In this work, theoretical investigation of the influence of Auger recombination coefficient and built-in polarization field on the internal quantum efficiency (IQE) in terms of lateral-vertical single quantum well (SQW) as well as multiquantum well (
Externí odkaz:
https://doaj.org/article/c6b279dc55014674bfceb1761820f019
Autor:
Seiji Ishimoto, Dong-Pyo Han, Kengo Yamamoto, Ryoya Mano, Satoshi Kamiyama, Tetsuya Takeuchi, Motoaki Iwaya, Isamu Akasaki
Publikováno v:
Applied Sciences, Vol 9, Iss 4, p 788 (2019)
In this study, we compared the device performance of GaInN-based green LEDs grown on c-plane sapphire substrates with a conventional low temperature GaN buffer layer to those with a sputtered-AlN buffer layer. The light output power and leakage curre
Externí odkaz:
https://doaj.org/article/746dc1d03f0a46a49b40a69ad58942b9
Autor:
Ryoya Mano, Dong-Pyo Han, Kengo Yamamoto, Seiji Ishimoto, Satoshi Kamiyama, Tetsuya Takeuchi, Motoaki Iwaya, Isamu Akasaki
Publikováno v:
Applied Sciences, Vol 9, Iss 2, p 305 (2019)
Currently, the internal quantum efficiency (IQE) of GaInN-based green light-emitting diodes (LEDs) is still low. To overcome this problem, surface plasmon (SP)-enhanced LEDs have been intensively studied for the last 15 years. For an SP effect in gre
Externí odkaz:
https://doaj.org/article/0fa2b5af2026465ca908ae571fa19c5b
Autor:
Muhammad Usman, Urooj Mushtaq, Dong-Guang Zheng, Dong-Pyo Han, Muhammad Rafiq, Nazeer Muhammad
Publikováno v:
Applied Sciences, Vol 9, Iss 1, p 77 (2018)
To improve the internal quantum efficiency of green light-emitting diodes, we present the numerical design and analysis of bandgap-engineered W-shaped quantum well. The numerical results suggest significant improvement in the internal quantum efficie
Externí odkaz:
https://doaj.org/article/9bff5f2da94b4add82f5e998a1e73639
Autor:
Sae Katsuro, Weifang Lu, Kazuma Ito, Nanami Nakayama, Shiori Yamamura, Yukimi Jinno, Soma Inaba, Ayaka Shima, Naoki Sone, Dong-Pyo Han, Kai Huang, Motoaki Iwaya, Tetsuya Takeuchi, Satoshi Kamiyama
Publikováno v:
Nanophotonics. 11:4793-4804
GaInN/GaN multi-quantum-shell (MQS) nanowires (NWs) are gaining increasing attention as promising materials for developing highly efficient long-wavelength micro-light emitting diodes (LEDs). To improve the emission properties in GaInN/GaN MQS NWs, i
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::653657c501324e730d8d5c2dca2a67a5
https://doi.org/10.1515/nanoph-2022-0388
https://doi.org/10.1515/nanoph-2022-0388
Autor:
Jeong‐Hwan Park, Markus Pristovsek, Wentao Cai, Heajeong Cheong, Atsushi Tanaka, Yuta Furusawa, Dong‐Pyo Han, Tae‐Yeon Seong, Hiroshi Amano
Publikováno v:
Advanced Optical Materials. 11
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::aa30ec82b6a832711a8470887eefc610
https://doi.org/10.1002/adom.202370029
https://doi.org/10.1002/adom.202370029