Zobrazeno 1 - 10
of 289
pro vyhledávání: '"Dong-Myong Kim"'
Autor:
Hyo-In Yang, Hanbin Lee, Jeonghee Ko, Yulim An, Gyeongsu Min, Dong Myong Kim, Dae Hwan Kim, Jong-Ho Bae, Meehyun Lim, Sung-Jin Choi
Publikováno v:
Scientific Reports, Vol 14, Iss 1, Pp 1-7 (2024)
Abstract Carbon nanotube networks (CNTs)-based devices are well suited for the physically unclonable function (PUF) due to the inherent randomness of the CNT network, but CNT networks can vary significantly during manufacturing due to various control
Externí odkaz:
https://doaj.org/article/30c6a4127cb342e7b66ec538d2c64620
Autor:
Tae Jun Yang, Jung Rae Cho, Hyunkyu Lee, Hee Jun Lee, Seung Joo Myoung, Da Yeon Lee, Sung-Jin Choi, Jong-Ho Bae, Dong Myong Kim, Changwook Kim, Jiyong Woo, Dae Hwan Kim
Publikováno v:
IEEE Access, Vol 12, Pp 28531-28537 (2024)
Obtaining symmetrical and highly linear synapse weight update characteristics of analog resistive switching devices is critical for attaining high performance and energy efficiency of the neural network system. In this work, based on the two-terminal
Externí odkaz:
https://doaj.org/article/83132ecb329e4de7a490a76eceb416e7
Autor:
Dongyeon Kang, Wonjung Kim, Jun Tae Jang, Changwook Kim, Jung Nam Kim, Sung-Jin Choi, Jong-Ho Bae, Dong Myong Kim, Yoon Kim, Dae Hwan Kim
Publikováno v:
IEEE Access, Vol 11, Pp 20196-20201 (2023)
Short- and long-term neuroplasticity behaviors are key mechanisms for various activities. In this paper, we propose a synaptic transistor with a floating-gate (FG) node and an amorphous InGaZnO (IGZO) channel layer. The proposed device emulates the n
Externí odkaz:
https://doaj.org/article/657610b286854e77a74ef877a46306bf
Publikováno v:
IEEE Access, Vol 9, Pp 6810-6816 (2021)
As a new type of one-dimensional nanomaterial, carbon nanotubes (CNTs) have been used as a chemical sensing material due to their excellent electrical, mechanical and chemical properties. Several recent studies have attempted to obtain an electrochem
Externí odkaz:
https://doaj.org/article/68bf86ad4c7d4d6d8003a7cd8138db1e
Autor:
Dongyeon Kang, Jun Tae Jang, Shinyoung Park, Md. Hasan Raza Ansari, Jong-Ho Bae, Sung-Jin Choi, Dong Myong Kim, Changwook Kim, Seongjae Cho, Dae Hwan Kim
Publikováno v:
IEEE Access, Vol 9, Pp 59345-59352 (2021)
Hardware-oriented neuromorphic computing is gaining great deal of interest for highly parallel data processing and superb energy efficiency, as the candidate for replacement of conventional von Neumann computing. In this work, a novel synaptic transi
Externí odkaz:
https://doaj.org/article/5006e47f327244c5b1389b94aa625031
Autor:
Jun Tae Jang, Jungi Min, Yeongjin Hwang, Sung-Jin Choi, Dong Myong Kim, Hyungjin Kim, Dae Hwan Kim
Publikováno v:
IEEE Access, Vol 8, Pp 192304-192311 (2020)
In this study, we demonstrate both of digital and analog memory operations in InGaZnO (IGZO) memristor devices by controlling the electrode materials for neuromorphic application. The switching properties of the devices are determined by the initial
Externí odkaz:
https://doaj.org/article/fcf32a04df674e328180579a996a12f6
Autor:
Donguk Kim, Hee Jun Lee, Tae Jun Yang, Woo Sik Choi, Changwook Kim, Sung-Jin Choi, Jong-Ho Bae, Dong Myong Kim, Sungjun Kim, Dae Hwan Kim
Publikováno v:
Nanomaterials, Vol 12, Iss 20, p 3582 (2022)
In this article, we study the post-annealing effect on the synaptic characteristics in Pd/IGZO/SiO2/p+-Si memristor devices. The O-H bond in IGZO films affects the switching characteristics that can be controlled by the annealing process. We propose
Externí odkaz:
https://doaj.org/article/14749cd96a504464be18e4499a50e777
Autor:
Haesung Kim, Han Bin Yoo, Heesung Lee, Ji Hee Ryu, Ju Young Park, Seung Hyeop Han, Hyojin Yang, Jong-Ho Bae, Sung-Jin Choi, Dae Hwan Kim, Dong Myong Kim
Publikováno v:
IEEE Transactions on Electron Devices. 70:3126-3130
Autor:
Ju Young Park, Haesung Kim, Han Bin Yoo, Ji Hee Ryu, Seung Hyeop Han, Jong-Ho Bae, Sung-Jin Choi, Dae Hwan Kim, Dong Myong Kim
Publikováno v:
IEEE Transactions on Electron Devices. 70:2312-2316
Autor:
Donguk Kim, Hee Jun Lee, Tae Jun Yang, Woo Sik Choi, Changwook Kim, Sung-Jin Choi, Jong-Ho Bae, Dong Myong Kim, Sungjun Kim, Dae Hwan Kim
Publikováno v:
Micromachines, Vol 13, Iss 10, p 1630 (2022)
This paper introduces a compact SPICE model of a two-terminal memory with a Pd/Ti/IGZO/p+-Si structure. In this paper, short- and long-term components are systematically separated and applied in each model. Such separations are conducted by the appli
Externí odkaz:
https://doaj.org/article/6b4818a06eb14b38a68d8dd4a192f284