Zobrazeno 1 - 10
of 66
pro vyhledávání: '"Dong-Ming Yeh"'
Autor:
Dong-Ming Yeh, 葉東明
96
In this dissertation, we first demonstrate the variations of the photoluminescence (PL) spectral peak position and intensity through the surface plasmon (SP) coupling with an InGaN/GaN quantum-well (QW) by forming Ag nanostructures of differe
In this dissertation, we first demonstrate the variations of the photoluminescence (PL) spectral peak position and intensity through the surface plasmon (SP) coupling with an InGaN/GaN quantum-well (QW) by forming Ag nanostructures of differe
Externí odkaz:
http://ndltd.ncl.edu.tw/handle/39968720742795091350
Autor:
Dong-Ming Yeh, 葉東明
91
Photonic crystals are crystal structures with periodic variation of material refractive indices or dielectric constants. The periodicity can be one, two, or three dimensional. When light propagate in photonic crystals, it will experience cont
Photonic crystals are crystal structures with periodic variation of material refractive indices or dielectric constants. The periodicity can be one, two, or three dimensional. When light propagate in photonic crystals, it will experience cont
Externí odkaz:
http://ndltd.ncl.edu.tw/handle/66370729602764101757
Autor:
Tsung Yi Tang, Chih-Chung Yang, Horng Shyang Chen, Cen-Shawn Wu, Chi Feng Huang, Dong Ming Yeh, Chii-Dong Chen, Cheng-Yen Chen, Yen Cheng Lu
Publikováno v:
Nanotechnology. 17:1454-1458
Nanoposts of 10?40?nm top diameter on an InGaN/GaN quantum well structure were fabricated using electron-beam lithography and inductively coupled plasma reactive ion etching. Significant blue shifts up to 130?meV in the photoluminescence (PL) spectru
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8727bbe4c576e6799557df04f882889d
https://doi.org/10.1088/0957-4484/17/5/048
https://doi.org/10.1088/0957-4484/17/5/048
Publikováno v:
IEEE Photonics Technology Letters. 22:640-642
The enhancement of light extraction by fabricating a surface grating structure around the mesa of a light-emitting diode (LED) with an approach combining photoelectrochemical (PEC) wet etching and phase mask interferometry is demonstrated. The PEC et
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a129afea2df8064b76d19c25f6bbbcf7
https://doi.org/10.1109/lpt.2010.2043093
https://doi.org/10.1109/lpt.2010.2043093
Autor:
Dong Ming Yeh, Yi Cheng Yu, Cheng Yin Wang, Min Yann Hsieh, Cheng-Pin Chen, Yun Wei Cheng, Chih Feng Lu, Tzu Pu Lin, Jian-Jang Huang, Chi Feng Huang, Min Yung Ke, Chih-Chung Yang, Liang Yi Chen
Publikováno v:
IEEE Electron Device Letters. 29:658-660
A practical approach to fabricate textured GaN-based light-emitting diodes (LEDs) by nanosphere lithography is presented. By spin coating a monolayer of SiO2 nanoparticles as the mask, textured LEDs can be fabricated. Both textured p-GaN and textured
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e693ae5a79680c593f835d77594afae6
https://doi.org/10.1109/led.2008.2000918
https://doi.org/10.1109/led.2008.2000918
Autor:
Horng-Shyang Chen, Jian-Jang Huang, Chih-Chung Yang, Chih-Feng Lu, Dong-Ming Yeh, Chi-Feng Huang
Publikováno v:
IEEE Photonics Technology Letters. 18:2671-2673
We demonstrate the dependence of the output spectrum on the Ohmic-contact thickness in a blue/green two-color InGaN-GaN quantum-well (QW) light-emitting diode. By decreasing the metal thickness of the p-type Ohmic contact on the device, the contact r
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::34e9e9b327ee026347f5b72e62e24157
https://doi.org/10.1109/lpt.2006.887797
https://doi.org/10.1109/lpt.2006.887797
Autor:
Jian-Jang Huang, Horng-Shyang Chen, Chih-Feng Lu, Chih-Chung Yang, Dong-Ming Yeh, Chi-Feng Huang
Publikováno v:
IEEE Photonics Technology Letters. 18:2269-2271
The implementations of an orange and a red light-emitting diode (LED), which are fabricated with a prestrained InGaN-GaN quantum-well (QW) epitaxy structure, are demonstrated. The prestrain condition is created by growing a low-indium QW before the g
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::38a18ca227b32406643a561ef3b7e34c
https://doi.org/10.1109/lpt.2006.884884
https://doi.org/10.1109/lpt.2006.884884
Autor:
Jian-Jang Huang, I-Shuo Liu, Chih-Chung Yang, Wen-Yu Shiao, Horng-Shyang Chen, Wei-Fang Su, Chih-Feng Lu, Chi-Feng Huang, Dong-Ming Yeh
Publikováno v:
IEEE Photonics Technology Letters. 18:1430-1432
We grew and processed a blue/green two-wavelength light-emitting diode (LED) based on the mixture of two kinds of quantum wells (QW) in epitaxial growth. The X-ray diffraction and photoluminescence measurements indicated that the crystalline structur
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::99c1330c681dbdf97feefde4df75bab2
https://doi.org/10.1109/lpt.2006.877551
https://doi.org/10.1109/lpt.2006.877551
Autor:
Chih-Hao Hsieh, Yi-Chen Yu, Tzu-Yang Chiu, Chih-Chung Yang, Chih-Feng Lu, Ghien-An Shih, Dong-Ming Yeh, Jian-Jang Huang
Publikováno v:
IEEE Photonics Technology Letters. 18:983-985
We investigate the contribution of sidewall illumination in InGaN-GaN quantum-well-based light-emitting diode (LED) arrays with various cell radii. The intensity contribution from the array sidewall decreases with the increase of radius as the perime
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9ada011d04f0dfa04483f95e3b2a882c
https://doi.org/10.1109/lpt.2006.873461
https://doi.org/10.1109/lpt.2006.873461
Autor:
I-Shuo Liu, Chih-Feng Lu, Chi-Feng Huang, Dong-Ming Yeh, Chih-Chung Yang, Horng-Shyang Chen, Tsung-Yi Tang, Yen-Cheng Lu, Wei-Fang Su, Jian-Jang Huang
Publikováno v:
IEEE Photonics Technology Letters. 18:712-714
Blue-red polychromatic light-emitting devices are fabricated by attaching red-emitting CdSe-ZnS nano-crystals on a blue-emitting InGaN-GaN multiple-quantum-well (MQW) structure. To improve the red/blue intensity contrast, holes of different diameters
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a5c71dd9d2e19d4243507177d9f26ffa
https://doi.org/10.1109/lpt.2006.870056
https://doi.org/10.1109/lpt.2006.870056