Zobrazeno 1 - 5
of 5
pro vyhledávání: '"Dong-Lyeul Kim"'
Publikováno v:
Journal of the Korean Physical Society. 72:406-411
The built-in voltage (V bi ) of a Au/n-GaAs Schottky barrier diode was examined by using electroreflectance (ER) spectroscopy. The ER spectra were measured at various modulation voltages (v ac ) and dc bias voltages (V bias ). The interface electric
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f6511492e886132659195a8b480c473c
https://doi.org/10.3938/jkps.72.406
https://doi.org/10.3938/jkps.72.406
Publikováno v:
Journal of the Korean Physical Society. 60:1911-1914
We investigated the flux-pinning properties of YBa2Cu3O7−x (YBCO) films in which Y2O3 and ZnO nanoparticles were uniformly embedded by using the pulsed laser deposition (PLD) technique. Y2O3 and ZnO nanoparticles with average sizes of 10–30 nm an
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7b29478a546db018f964a1cb2e9f66df
https://doi.org/10.3938/jkps.60.1911
https://doi.org/10.3938/jkps.60.1911
Publikováno v:
Transactions on Electrical and Electronic Materials. 5:194-198
The influences of the deep-level concentration of p-type Si substrates on the optical properties of nano-porous silicon (PS) are investigated by deep level transient spectroscopy (DLTS) and photoluminescence (PL). Utilizing a Si substrate with Fe con
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e8140c6bf4b5fcb8d2667b6d968f1e0c
https://doi.org/10.4313/teem.2004.5.5.194
https://doi.org/10.4313/teem.2004.5.5.194
Autor:
Y. G. Joh, B. Y. Kim, S. H. Moon, S. I. Woo, Chae Ryong Cho, H. D. Kim, J. H. Cho, Dong-Lyeul Kim, E. C. Kim, J. P. Kim
Publikováno v:
physica status solidi (b). 241:1537-1540
We studied the structural and magnetic properties of Ti1−xCoxO2 powder samples synthesized by the sol–gel method. In order to study the post annealing effect on the magnetic properties, the same precursor was annealed at 770 K for 5 h in air and
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4b3fdb24323b6b22c5a928d77b6138ba
https://doi.org/10.1002/pssb.200304658
https://doi.org/10.1002/pssb.200304658
Publikováno v:
Spectrochimica Acta Part A: Molecular and Biomolecular Spectroscopy. 64:54-56
We investigated the photoreflectance (PR) spectra of as-grown, etched AlGaAs/GaAs heterostructure sample. As etching time increases, the electric fields are reduced. And the surface and interface electric field calculated for the AlGaAs/GaAs sample,
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::af428b26a39c60634a848a7ef21aea1f
https://doi.org/10.1016/j.saa.2005.06.037
https://doi.org/10.1016/j.saa.2005.06.037