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pro vyhledávání: '"Dong-Hwee Hwang"'
Autor:
Dong-Hwee Hwang, Yong-Sik Kim, Minji Seo, Kyongsik Yeom, Young Ki Hong, Yong Seok Chung, MyeongHee Oh, Jongsung Woo, Young-cheon Jeong, Sungyoung Yoon, Sangjin Lee, Chang-Min Jeon, Dong-Hyun Kim, Jae-Hun Lee, S. L. Cho, D.H. Kim, Ga-Young Lee, Gun Rae Kim, HyunChang Lee, Yong-Kyu Lee, Hyun-Jin Shin
Publikováno v:
2021 IEEE International Memory Workshop (IMW).
Based on robustness of split-gate embedded Flash (eFlash) bit-cell, 28-nm eFlash process with Flash IP (20Mb) and SRAM IP (32Mb) is developed for automotive Grade 1 (G1) application with temperature range of (−40∼150°C) for the first time. In ca
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::77520e6b5e0c91ff52b383f30b542789
https://doi.org/10.1109/imw51353.2021.9439602
https://doi.org/10.1109/imw51353.2021.9439602
