Zobrazeno 1 - 10
of 13
pro vyhledávání: '"Dong-Guang Zheng"'
Autor:
Dong-Guang Zheng, Hyeon-Dong Lee, Gyeong Won Lee, Dong-Soo Shin, Jeongwon Kim, Jong-In Shim, Zhiqun Lin, Tae-Woo Lee, Dong Ha Kim
Publikováno v:
Nano Research Energy, Vol 3, Iss 2, p e9120109 (2024)
Organic light-emitting diodes (OLEDs) have demonstrated remarkable advancements in both device lifetime and luminous efficiency. However, insufficient operation lifetime due to device degradation remains a major hurdle, especially for brighter device
Externí odkaz:
https://doaj.org/article/d0df1e0b1b9a4735a79f38b567bc574b
Autor:
Muhammad Usman, Urooj Mushtaq, Dong-Guang Zheng, Dong-Pyo Han, Muhammad Rafiq, Nazeer Muhammad
Publikováno v:
Applied Sciences, Vol 9, Iss 1, p 77 (2018)
To improve the internal quantum efficiency of green light-emitting diodes, we present the numerical design and analysis of bandgap-engineered W-shaped quantum well. The numerical results suggest significant improvement in the internal quantum efficie
Externí odkaz:
https://doaj.org/article/9bff5f2da94b4add82f5e998a1e73639
Autor:
Dong Ha Kim, Dong-Guang Zheng
Publikováno v:
Nanophotonics. 12:451-476
Metal-halide perovskite light-emitting diodes (PeLEDs) are considered as new-generation highly efficient luminescent materials for application in displays and solid-state lighting. Since the first successful demonstration of PeLEDs in 2014, the resea
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f7c4694f2fad1606edd0f5b165b12342
https://doi.org/10.1515/nanoph-2022-0569
https://doi.org/10.1515/nanoph-2022-0569
Publikováno v:
Japanese Journal of Applied Physics. 60:052003
As the latest applications of LEDs require more harsh operating conditions, understanding the device thermal properties becomes more essential for further improving the device efficiencies. In applications where heat dissipation can be a critical iss
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::47dfd29b9f128f211dc36524ef84449c
https://doi.org/10.35848/1347-4065/abf90c
https://doi.org/10.35848/1347-4065/abf90c
Publikováno v:
Japanese Journal of Applied Physics. 60:032006
Degradation phenomena of GaN-based blue LEDs are investigated from comprehensive electrical, optical, and thermal analyses. After constant reverse-bias stress, the LED sample under investigation shows permanent degradations indicated by increases bot
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c3c710fb25cd42d5970d49bfda45c393
https://doi.org/10.35848/1347-4065/abe816
https://doi.org/10.35848/1347-4065/abe816
Publikováno v:
Journal of the Korean Physical Society. 66:1554-1558
Near-ultraviolet light-emitting diodes (NUV LEDs) with different numbers of quantum wells (QWs) were grown by using metal-organic chemical vapor deposition (MOCVD) to investigate the effects of the number of QWs on the performance of NUV LEDs. With i
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c4da47f8b6beaf7a7c0f7c4d18ff3d75
https://doi.org/10.3938/jkps.66.1554
https://doi.org/10.3938/jkps.66.1554
Autor:
Urooj Mushtaq, Nazeer Muhammad, Muhammad Rafiq, Dong-Pyo Han, Muhammad Usman, Dong-Guang Zheng
Publikováno v:
Applied Sciences
Volume 9
Issue 1
Applied Sciences, Vol 9, Iss 1, p 77 (2018)
Volume 9
Issue 1
Applied Sciences, Vol 9, Iss 1, p 77 (2018)
To improve the internal quantum efficiency of green light-emitting diodes, we present the numerical design and analysis of bandgap-engineered W-shaped quantum well. The numerical results suggest significant improvement in the internal quantum efficie
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::6c91456f19282770185fe604f202aedb
https://doi.org/10.3390/app9010077
https://doi.org/10.3390/app9010077
Autor:
Dong-Pyo Han, Dong-Guang Zheng, Dong-Soo Shin, Kyu-Sang Kim, Chan-Hyoung Oh, Hyunsung Kim, Jong-In Shim
Publikováno v:
SPIE Proceedings.
In InGaN/GaN blue light-emitting diodes (LEDs) widely utilized for general lighting, there exist various material issues that lead to the unwanted nonradiative recombination. In this paper, we utilize various characterization techniques to investigat
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b9c51470d053c25009f5048c66085a84
https://doi.org/10.1117/12.2078970
https://doi.org/10.1117/12.2078970
Autor:
Kyu-Sang Kim, Hyunsung Kim, Dong-Guang Zheng, Chan-Hyoung Oh, Dong-Soo Shin, Jong-In Shim, Dong-Pyo Han
Publikováno v:
Japanese Journal of Applied Physics. 54:02BA01
We investigate the nonradiative recombination mechanisms of two conventional InGaN/GaN-based blue light-emitting diodes with different threading dislocation densities (TDDs). The current–voltage, the ideality factor, and the slope of the light-vers
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::35bb18f5735b3c0c5e13e4ab9b951ca9
https://doi.org/10.7567/jjap.54.02ba01
https://doi.org/10.7567/jjap.54.02ba01
Autor:
Dong-Pyo Han, Dong-Guang Zheng, Chan-Hyoung Oh, Hyunsung Kim, Jong-In Shim, Dong-Soo Shin, Kyu-Sang Kim
Publikováno v:
Applied Physics Letters; 4/14/2014, Vol. 104 Issue 15, p151108-1-151108-4, 4p, 5 Graphs