Zobrazeno 1 - 5
of 5
pro vyhledávání: '"Dong-Earn Kim"'
Autor:
Hwan-Ju Lee, Heung-Kyu Kim, Dong-Earn Kim, Yong-Jun Jeon, Bong-Gu Kim, Chae-Yeom Jeon, Jong-Won Kum
Publikováno v:
Transaction of the Korean Society of Automotive Engineers. 30:153-159
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c42cc40c69c98ec1aa6f5a33978af35f
https://doi.org/10.7467/ksae.2022.30.2.153
https://doi.org/10.7467/ksae.2022.30.2.153
Publikováno v:
Journal of the Korean Society of Manufacturing Process Engineers. 14:8-13
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::02887359b78a0a4339c1065369b1b38c
https://doi.org/10.14775/ksmpe.2015.14.4.008
https://doi.org/10.14775/ksmpe.2015.14.4.008
Publikováno v:
International Journal of Modern Physics B. 22:1795-1800
To investigate the dynamic deformation behavior of silicon induced by the energetic cluster impact at an atomistic level, cluster impact simulations are carried out using molecular dynamics. Clusters are emitted to the silicon (100) surface with exte
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::104bd021a2ac51423b1e2f5390d70691
https://doi.org/10.1142/s0217979208047432
https://doi.org/10.1142/s0217979208047432
Autor:
Dong Earn Kim, Soo Ik Oh
Publikováno v:
Journal of Applied Physics. 104:013502
The deformation pathway of silicon induced by nanoindentation is investigated in detail at the atomic level using molecular dynamics. Due to the complex stresses associated with the directional loading along a specific crystallographic orientation, t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b5459564393f6b35a93d934bdae1631a
https://doi.org/10.1063/1.2949404
https://doi.org/10.1063/1.2949404
Publikováno v:
International Journal of Modern Physics B: Condensed Matter Physics; Statistical Physics; Applied Physics; 4/30/2008, Vol. 22 Issue 9-11, p1795-1800, 6p, 1 Black and White Photograph, 2 Diagrams