Zobrazeno 1 - 10
of 52
pro vyhledávání: '"Dong-Dong Hu"'
Autor:
Tao Huang, Ling Zhao, Cheng-Yuan Lin, Lin Lu, Zi-Wan Ning, Dong-Dong Hu, Linda L. D. Zhong, Zhi-Jun Yang, Zhao-Xiang Bian
Publikováno v:
Frontiers in Pharmacology, Vol 10 (2020)
In a prospective, randomized, three-arms, controlled clinical study, Chinese Herbal Medicine MaZiRenWan (MZRW, also known as Hemp Seed Pill) demonstrates comparable efficacy with Senna for functional constipation (FC) during an 8-week treatment perio
Externí odkaz:
https://doaj.org/article/ad4c2b53f9e141139de8f2f6769ba227
Autor:
Tao Huang, Linda L. D. Zhong, Chen-Yuan Lin, Ling Zhao, Zi-Wan Ning, Dong-Dong Hu, Man Zhang, Ke Tian, Chung-Wah Cheng, Zhao-Xiang Bian, for MZRW Research Group
Publikováno v:
Chinese Medicine, Vol 13, Iss 1, Pp 1-7 (2018)
Abstract Investigating the pharmacology is key to the modernization of Chinese Medicine (CM) formulas. However, identifying which are the active compound(s) of CM formulas, which biological entities they target, and through which signaling pathway(s)
Externí odkaz:
https://doaj.org/article/d6489b482e3e4487bedcb8eda405aaa9
Publikováno v:
IEEE Transactions on Power Electronics. 34:4465-4479
It is a serious challenge to find the optimal winding configuration that realizes minimum leakage inductance of multi-output multi-winding planar transformers due to the complex coupling relationship. The proposed idea is to build the mathematical mo
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d492ff1dd5437cb29ac1102f14544fb7
https://doi.org/10.1109/tpel.2018.2862250
https://doi.org/10.1109/tpel.2018.2862250
Publikováno v:
IEEE Transactions on Power Electronics. 32:5527-5538
Commercial eGaN HEMT gate drivers focus on high reliability to the strict gate driving voltage against parasitic components. However, they do not consider the high reverse conduction voltage due to the reverse conduction mechanism under ZVS condition
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4123111176b434dea19863e4bdb78cb2
https://doi.org/10.1109/tpel.2016.2606443
https://doi.org/10.1109/tpel.2016.2606443
Autor:
Ling Zhao ab, Zhao-Xiang Bian abc, Cheng-Yuan Lin abc, Linda Li-Dan Zhong ab, Kun Wai ab, Tao Huang abc, Liang Dai ab, Dong-Dong Hu abc, Huai-Xue Mu abc
Publikováno v:
World Journal of Traditional Chinese Medicine. 3:8-15
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b0d965039eac756a98b113c5c3902ab9
https://doi.org/10.15806/j.issn.2311-8571.2016.0050
https://doi.org/10.15806/j.issn.2311-8571.2016.0050
Autor:
Dong-Dong Hu, Xiang chun Shen, Zhaoxiang Bian, Bo Wen, Zhendan He, Jiao Peng, Xiao Peng Hu, Haitao Xiao, Zhigang Liu
Publikováno v:
Oxidative Medicine and Cellular Longevity, Vol 2019 (2019)
Oxidative Medicine and Cellular Longevity
Oxidative Medicine and Cellular Longevity
Indigo naturalis (also known as Qing-dai, or QD), a traditional Chinese medicine, has been widely used as an anticolitis regimen in the clinical practice of Chinese medicine. However, the precise mechanisms behind its efficacy remain unknown. We inve
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::4b9d4c494962ffc15d6990628b311c26
https://doaj.org/article/813b0dc0a7264064a32aa191106ac41f
https://doaj.org/article/813b0dc0a7264064a32aa191106ac41f
Publikováno v:
2018 IEEE 3rd International Conference on Integrated Circuits and Microsystems (ICICM).
This paper is mainly for the study of current mode Class-D(CMCD) power amplifier at 1MHz operating frequency. The article mainly focuses on the influence of the driving circuit of the power MOSFET on the Class-D amplifier at high frequency, the param
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::14d08f5cb232c1594933fae93f7ec687
https://doi.org/10.1109/icam.2018.8596608
https://doi.org/10.1109/icam.2018.8596608
Publikováno v:
2018 14th IEEE International Conference on Solid-State and Integrated Circuit Technology (ICSICT).
In order to provide good experimental environment for insulated gate bipolar transistor (IGBT) and solve its junction temperature measurement problem in the power cycle system, the IGBT pre-threshold voltage is used as a temperature sensitive paramet
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::64a9af695139531f63317bc86c588e41
https://doi.org/10.1109/icsict.2018.8564945
https://doi.org/10.1109/icsict.2018.8564945
Publikováno v:
2018 14th IEEE International Conference on Solid-State and Integrated Circuit Technology (ICSICT).
In this paper, according to the analysis of insulated-gated bipolar transistor (IGBT) failure module, the potential reliability defects of IGBT module are evaluated by the finite element method (FEM). The simulation model is based on a commercial dev
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::768fbe840f7ea6f73e8f47633beaf840
https://doi.org/10.1109/icsict.2018.8564871
https://doi.org/10.1109/icsict.2018.8564871
Publikováno v:
2018 IEEE Applied Power Electronics Conference and Exposition (APEC).
It is a serious challenge to find the optimal winding configuration that realizes minimum leakage inductance of the multi-winding planar transformers due to the complex coupling relationship. The proposed idea is to build the mathematical model of le
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6e66ec17da16eabd64263da6636af958
https://doi.org/10.1109/apec.2018.8341335
https://doi.org/10.1109/apec.2018.8341335