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pro vyhledávání: '"Dong Woohn Kim"'
Publikováno v:
2006 International Conference on Numerical Simulation of Semiconductor Optoelectronic Devices.
It was analyzed qualitatively the light extraction in GaN-on-sapphire LEDs based on a simple model. The light extraction efficiency in the LEDs is simulated numerically by using ray tracing method. In the present study, the extraction efficiency was
Publikováno v:
SPIE Proceedings.
Molecular-mechanics based simulations are applied to investigate the structures and phase stability of InGaN alloys. The variation of bond lengths and angles with increasing In composition is found. This causes the considerable structural change and
Publikováno v:
2006 International Conference on Numerical Simulation of Semiconductor Optoelectronic Devices; 2006, p17-18, 2p