Zobrazeno 1 - 9
of 9
pro vyhledávání: '"Dong Uk Choe"'
Autor:
Jaerock Lee, Dong-Uk Choe, Byungki Park, Seung-Wook Suh, Young-Seak Lee, Jang-Jung Kim, Sook-Hyun Kim
Publikováno v:
Journal of Crystal Growth. 312:3410-3415
Polycrystalline Bi 2 Te 3 nanowires were prepared by a hydrothermal method that involved inducing the nucleation of Bi atoms reduced from BiCl 3 on the surface of Te nanowires, which served as sacrificial templates. A Bi–Te alloy is formed by the i
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::747b3dd0e1faa092bb210a616cd31fe8
https://doi.org/10.1016/j.jcrysgro.2010.08.033
https://doi.org/10.1016/j.jcrysgro.2010.08.033
Publikováno v:
Journal of the Korean Ceramic Society. 44:562-567
To precipitate the complex gels of the pH 6, 7, 8, 9 included in a flux and an aluminum hydroxides gel, an aqueous solution of a mixture of Na₂CO₃ and Na₂PO₄ㆍ12H₂O was added with stirring in an aqueous solution of a mixture of Al₂(SO₄
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3c4fc29af904770333e6b3369c6ae289
https://doi.org/10.4191/kcers.2007.44.1.562
https://doi.org/10.4191/kcers.2007.44.1.562
Publikováno v:
Journal of the Korean Ceramic Society. 44:325-330
High porous AlO(OH) gel is used in precursor of ceramic material, coating material and porous catalyst. For use of these, not only physiochemical control for particle morphology, pore characteristic and peptization but also studies of synthetic metho
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::76cb12f7acf34d60128475f1b7594008
https://doi.org/10.4191/kcers.2007.44.6.325
https://doi.org/10.4191/kcers.2007.44.6.325
Publikováno v:
Journal of the Korean Ceramic Society. 43:564-568
AlO(OH) nano gel is used in precursor of ceramic material, coating material and catalyst. For use of these, not only physiochemical control for particle morphology, pore characteristic and peptization but also studies of synthetic method for preparat
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7e136b48e2e0c58af91077f932a079a2
https://doi.org/10.4191/kcers.2006.43.9.564
https://doi.org/10.4191/kcers.2006.43.9.564
Publikováno v:
Journal of the Korean Society for Aeronautical & Space Sciences. 31:75-84
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::16a9304f31a28051767505515ab13e28
https://doi.org/10.5139/jksas.2003.31.7.075
https://doi.org/10.5139/jksas.2003.31.7.075
Autor:
Donggun Park, Ming Li, Sung-min Kim, Sung-young Lee, Dong-Won Kim, Sung Hwan Kim, Kinam Kim, Sung Dae Suk, Eun Jung Yoon, Dong Uk Choe, Byung-Il Ryu, Kyoung Hwan Yeo, Min Sang Kim, Chang Woo Oh
Publikováno v:
Digest of Technical Papers. 2005 Symposium on VLSI Technology, 2005..
We demonstrate for the first time high performance titanium nitride (TiN) single metal gate 65nm CMOS McFET (multichannel field effect transistor) SRAM cell transistor on bulk Si wafer. This single metal gate McFET shows suitable threshold voltage (V
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c9b248b3939516cc11dfff1e9ca3235b
https://doi.org/10.1109/.2005.1469265
https://doi.org/10.1109/.2005.1469265
Autor:
Eun Jung Yoon, Jeong Dong Choe, Chang Woo Oh, Donggun Park, Ming Li, Sung Dae Suk, Dong-Won Kim, Byung-Il Ryu, Dong Uk Choe, Hye Jin Jo, Sung-min Kim, Sung-young Lee, Kyoung Hwan Yeo, Min Sang Kim, Sung Hwan Kim, Kinam Kim
Publikováno v:
IEDM Technical Digest. IEEE International Electron Devices Meeting, 2004..
We demonstrate highly manufacturable double FinFET on bulk Si wafer, named multi-channel field effect transistor (McFET) for the high performance 80nm 144M SRAM. Twin fins are formed for each transistor using our newly developed simple process scheme
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a7c2d2d10951c79efd48a2460e199add
https://doi.org/10.1109/iedm.2004.1419247
https://doi.org/10.1109/iedm.2004.1419247
Autor:
Sung Min Kim, Eun Jung Yoon, Hye Jin Jo, Ming Li, Chang Woo Oh, Sung Young Lee, Kyoung Hwan Yeo, Min Sang Kim, Sung Hwan Kim, Dong Uk Choe, Jeong Dong Choe, Sung Dae Suk, Dong-Won Kim, Donggun Park, Kinam Kim, Byung-Il Ryu
Publikováno v:
IEDM Technical Digest. IEEE International Electron Devices Meeting, 2004; 2004, p639-642, 4p
Autor:
Sung Min Kim, Eun Jung Yoon, Min Sang Kim, Chang Woo Oh, Sung Dae Suk, Ming Li, Sung Young Lee, Kyoung Hwan Yeo, Sung Hwan Kim, Dong Uk Choe, Dong-Won Kim, Donggun Park, Kinam Kim, Byung-il Ryu
Publikováno v:
2005 Digest of Technical Papers. 2005 Symposium on VLSI Technology; 2005, p196-197, 2p